BSS87,115 N-Channel MOSFET 200V 400mA Equivalent & Substitute Parts

Part Overview

The BSS87,115 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 200V drain-to-source voltage with 400mA continuous drain current in a surface mount SOT-89 package. This device is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product roadmap. Identification of equivalent and substitute parts is necessary for applications requiring continued component availability, design flexibility, or performance optimization within specified electrical and mechanical constraints.

Substiute Parts

BSS87,115
Nexperia USA Inc.In Stock: 5358BSS87,115 Datasheet
BSS87,115
Current Part
XP161A1355PR-G
Torex Semiconductor LtdIn Stock: 35441XP161A1355PR-G Datasheet
XP161A1355PR-G
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 400 mA
On-State Resistance (Rds On Max) @ Id, Vgs 3 Ohm @ 400mA, 10V
Gate-Source Threshold Voltage (Vgs(th) Max) @ Id 2.8 V @ 1mA
Gate-Source Voltage (Vgs Max) ±20 V
Input Capacitance (Ciss Max) @ Vds 120 pF @ 25V
Power Dissipation (Max) 580 (Ta), 12.5 (Tc) mW, W
Operating Temperature Range (TJ) -55 to 150 °C
Mounting Type Surface Mount
Package / Case TO-243AA (SOT-89)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BSS87,115 MOSFET is constrained by the following critical electrical and mechanical parameters:

Electrical Constraints:

  • Drain-to-Source Voltage (Vdss) rating must equal or exceed 200V to maintain voltage withstand capability
  • Continuous Drain Current (Id) must equal or exceed 400mA to support load requirements
  • On-State Resistance (Rds On) must not exceed 3 Ohm at specified gate-source voltage to maintain conduction efficiency
  • Gate-Source Threshold Voltage (Vgs(th)) must be compatible with drive circuitry
  • Operating temperature range must encompass -55°C to 150°C (TJ)

Mechanical Constraints:

  • Package must be SOT-89 (TO-243AA) surface mount configuration
  • Moisture Sensitivity Level must be MSL 1 or equivalent
  • RoHS3 compliance is required

Compliance Requirements:

  • REACH Unaffected status
  • ECCN EAR99 classification

The substitute part XP161A1355PR-G does not meet the electrical substitution criteria for the BSS87,115 due to significant deviations in voltage rating and current capacity.

Parameter Comparison

Parameter BSS87,115 (Nexperia) XP161A1355PR-G (Torex) Compatibility
Drain-to-Source Voltage (Vdss) 200 V 20 V Not Compatible
Continuous Drain Current (Id) @ 25°C 400 mA 4 A Exceeds Requirement
On-State Resistance (Rds On Max) 3 Ohm @ 400mA, 10V 50 mOhm @ 2A, 4.5V Different Test Conditions
Gate-Source Voltage (Vgs Max) ±20 V ±8 V Reduced Range
Input Capacitance (Ciss Max) 120 pF @ 25V 390 pF @ 10V Higher Capacitance
Power Dissipation (Max) 580 mW (Ta), 12.5 W (Tc) 2 W (Ta) Lower Rating
Operating Temperature (TJ) -55 to 150 °C 150 °C (Max Only) Incomplete Specification
Package / Case TO-243AA (SOT-89) TO-243AA (SOT-89) Compatible
RoHS Status ROHS3 Compliant ROHS3 Compliant Compatible
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Compatible

Engineering Selection Recommendations

Based on the provided electrical and mechanical parameters, the XP161A1355PR-G cannot serve as a direct substitute for the BSS87,115 due to fundamental voltage rating incompatibility. The XP161A1355PR-G is rated for 20V maximum drain-to-source voltage, which is insufficient for applications requiring 200V operation.

Both devices share compatible packaging (SOT-89), RoHS3 compliance, and MSL 1 moisture sensitivity classification. However, these mechanical and compliance similarities do not override the critical electrical parameter mismatch.

The BSS87,115 is designated "Not For New Designs" by Nexperia USA Inc., while the XP161A1355PR-G maintains "Active" product status from Torex Semiconductor Ltd. For applications currently using the BSS87,115, component selection must prioritize alternative N-Channel MOSFETs with 200V or higher Vdss rating, 400mA or higher Id rating, and compatible SOT-89 packaging.

Frequently Asked Questions (FAQ)

Q: Can the XP161A1355PR-G replace the BSS87,115 in existing designs?

A: No. The XP161A1355PR-G has a maximum drain-to-source voltage rating of 20V, while the BSS87,115 is rated for 200V. Using a lower-voltage device in a 200V application will result in device failure and potential circuit damage.

Q: What is the primary reason these parts are not interchangeable?

A: The drain-to-source voltage (Vdss) ratings differ by a factor of 10. The BSS87,115 operates at 200V, while the XP161A1355PR-G operates at 20V. This fundamental electrical parameter determines the maximum voltage the MOSFET can withstand between drain and source terminals.

Q: Are the package types compatible between these two devices?

A: Yes. Both the BSS87,115 and XP161A1355PR-G use the SOT-89 (TO-243AA) surface mount package. However, package compatibility alone does not qualify a part as a substitute when electrical ratings are incompatible.

Q: Why is the BSS87,115 marked "Not For New Designs"?

A: This designation indicates that Nexperia USA Inc. has discontinued active development and promotion of this part number. Existing inventory remains available, but the manufacturer recommends alternative parts for new circuit designs. This status does not affect the performance or reliability of existing stock.

Q: What compliance certifications are shared between these parts?

A: Both devices are ROHS3 compliant, REACH Unaffected, classified as EAR99, and carry MSL 1 (Unlimited) moisture sensitivity ratings. These certifications ensure regulatory compliance for industrial and commercial applications.

Q: How should I identify a suitable substitute for the BSS87,115?

A: Substitute parts must meet or exceed the following specifications: 200V minimum drain-to-source voltage, 400mA minimum continuous drain current, SOT-89 surface mount package, and operating temperature range of -55°C to 150°C. Additional parameters such as on-state resistance and gate-source threshold voltage should be evaluated based on specific circuit requirements.

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