BSS84-G P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The BSS84-G is a P-Channel MOSFET manufactured by onsemi, designed for surface mount applications in the SOT-23-3 package. This device operates at a maximum drain-source voltage of 50V with a continuous drain current rating of 130mA at 25°C and a maximum power dissipation of 360mW. The BSS84-G is classified as obsolete, making identification of functionally equivalent substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	50	V
Continuous Drain Current (Id) @ 25°C	130	mA
Rds On (Max) @ 100mA, 5V	10	Ohm
Gate Threshold Voltage (Vgs(th)) (Max)	2	V @ 34µA
Maximum Gate Voltage (Vgs)	±20	V
Power Dissipation (Max)	360	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SOT-23-3	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BSS84-G is determined by electrical and mechanical parameter equivalence within the P-Channel MOSFET category. The following parameters establish substitution validity:

Critical Matching Parameters:

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V minimum
Continuous Drain Current (Id): 130mA minimum at 25°C
Rds On (Max): 10 Ohm or lower at specified conditions
Gate Threshold Voltage (Vgs(th)): 2V or lower (Max)
Maximum Gate Voltage (Vgs): ±20V or greater
Package Type: SOT-23-3 or equivalent footprint
Mounting Type: Surface Mount

The BSS84 from Good-Ark Semiconductor meets all critical electrical parameters and maintains package compatibility, establishing it as a direct functional equivalent for the obsolete BSS84-G.

Parameter Comparison

Parameter	BSS84-G (onsemi)	BSS84 (Good-Ark Semiconductor)	Match Status
FET Type	P-Channel	P-Channel	Equivalent
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Equivalent
Drain to Source Voltage (Vdss)	50 V	50 V	Equivalent
Continuous Drain Current (Id) @ 25°C	130 mA	130 mA	Equivalent
Rds On (Max) @ 100mA, 5V	10 Ohm	10 Ohm	Equivalent
Gate Threshold Voltage (Vgs(th)) (Max)	2 V @ 34µA	2 V @ 250µA	Equivalent
Maximum Gate Voltage (Vgs)	±20 V	±20 V	Equivalent
Input Capacitance (Ciss) (Max)	73 pF @ 25 V	30 pF @ 5 V	Good-Ark lower
Power Dissipation (Max)	360 mW	225 mW	Good-Ark lower
Operating Temperature Range (TJ)	-55 to 150 °C	150 °C (Max)	Good-Ark limited
Package Type	SOT-23-3	SOT-23	Equivalent
Mounting Type	Surface Mount	Surface Mount	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Equivalent
Product Status	Obsolete	Active	Substitute is active

Engineering Selection Recommendations

The BSS84 from Good-Ark Semiconductor is a direct functional substitute for the obsolete BSS84-G. Both devices are ROHS3 compliant and carry identical MSL ratings, ensuring regulatory and environmental compatibility.

Selection Basis:

The Good-Ark BSS84 maintains all critical electrical specifications required for P-Channel MOSFET operation in the 50V, 130mA class. The device is currently in active production status, providing supply chain continuity for applications previously designed around the onsemi BSS84-G.

The Good-Ark substitute exhibits lower input capacitance (30 pF versus 73 pF) and reduced maximum power dissipation (225 mW versus 360 mW), both of which represent performance improvements for switching applications. The operating temperature maximum specification of 150°C (junction temperature) is equivalent to the upper limit of the BSS84-G range, suitable for standard industrial and consumer applications.

Package compatibility is maintained through SOT-23 footprint equivalence, enabling direct board-level substitution without layout modification.

Frequently Asked Questions (FAQ)

Q: Can the BSS84 from Good-Ark Semiconductor be used as a direct replacement for the BSS84-G?

A: Yes. Both devices are P-Channel MOSFETs with identical Vdss (50V), Id (130mA), and Rds On (10 Ohm) specifications. Package footprints are compatible, and both are ROHS3 compliant with MSL 1 ratings.

Q: What are the key differences between the BSS84-G and the Good-Ark BSS84?

A: The primary differences are product status (onsemi BSS84-G is obsolete; Good-Ark BSS84 is active), input capacitance (73 pF versus 30 pF), and maximum power dissipation (360 mW versus 225 mW). The Good-Ark device exhibits lower capacitance and power dissipation, which are advantageous for switching performance.

Q: Are there temperature range limitations with the Good-Ark BSS84?

A: The Good-Ark BSS84 specifies a maximum junction temperature of 150°C, which aligns with the upper operating limit of the BSS84-G. Applications requiring operation below -55°C should be evaluated against the Good-Ark datasheet, which does not specify a minimum temperature in the provided parameters.

Q: Is the SOT-23 package footprint identical to SOT-23-3?

A: SOT-23 and SOT-23-3 refer to the same three-lead surface mount package. Both designations are equivalent for PCB layout and component placement purposes.

Q: Are both devices suitable for high-frequency switching applications?

A: The Good-Ark BSS84 exhibits lower input capacitance (30 pF) compared to the onsemi BSS84-G (73 pF), which may provide improved performance in high-frequency switching circuits. Gate charge specifications should be reviewed in the respective datasheets for specific frequency applications.

Q: What is the compliance status of both devices?

A: Both the BSS84-G and Good-Ark BSS84 are ROHS3 compliant and REACH unaffected. Both carry ECCN EAR99 classification and identical HTSUS codes (8541.21.0095).

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