BSS670S2L N-Channel MOSFET 55V 540mA Equivalent & Substitute Parts

Part Overview

The BSS670S2L is an N-Channel MOSFET manufactured by Infineon Technologies in the OptiMOS™ series, rated for 55V drain-source voltage with 540mA continuous drain current. The device is packaged in SOT-23-3 (TO-236-3) surface mount configuration and is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts from active product lines is necessary to maintain design continuity and ensure long-term component availability for new production and redesign initiatives.

Substiute Parts

BSS670S2L
Infineon TechnologiesIn Stock: 2235BSS670S2L Datasheet
BSS670S2L
Current Part
BSS670S2LH6327XTSA1
Infineon TechnologiesIn Stock: 236267BSS670S2LH6327XTSA1 Datasheet
BSS670S2LH6327XTSA1
Parametric Equivalent
MMBF170-7-F
Diodes IncorporatedIn Stock: 257864MMBF170-7-F Datasheet
MMBF170-7-F
Direct
BSS138LT1G
onsemiIn Stock: 905293BSS138LT1G Datasheet
BSS138LT1G
MFR Recommended
BSS138LT3G
onsemiIn Stock: 35250BSS138LT3G Datasheet
BSS138LT3G
MFR Recommended
MMBF170LT1G
onsemiIn Stock: 89169MMBF170LT1G Datasheet
MMBF170LT1G
MFR Recommended
PJA3460-AU_R1_000A1
Panjit International Inc.In Stock: 768PJA3460-AU_R1_000A1 Datasheet
PJA3460-AU_R1_000A1
MFR Recommended
PJA3460_R1_00001
Panjit International Inc.In Stock: 36621PJA3460_R1_00001 Datasheet
PJA3460_R1_00001
MFR Recommended
PMV450ENEAR
Nexperia USA Inc.In Stock: 3355PMV450ENEAR Datasheet
PMV450ENEAR
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Continuous Drain Current (Id) @ 25°C 540 mA
Rds On (Max) @ Id, Vgs 650 mOhm @ 270mA, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id 2 V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs 2.26 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25V
Power Dissipation (Max) 360 mW (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BSS670S2L is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

  • FET Type: N-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 55V
  • Continuous Drain Current (Id): Substitute must support minimum 540mA at 25°C
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
  • Maximum Gate Voltage (Vgs): Must support ±20V operation
  • Operating Temperature Range: Must span -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

  • Mounting Type: Surface Mount required
  • Package / Case: SOT-23-3 (TO-236-3, SC-59) pinout compatibility required

Substitute Categories:

Category 1: Parametric Equivalents (Identical Specifications)

  • BSS670S2LH6327XTSA1 (Infineon Technologies) — Active product status, identical electrical specifications, same package

Category 2: Direct Functional Substitutes (Vdss ≥ 55V, Id ≥ 540mA)

  • MMBF170-7-F (Diodes Incorporated) — 60V, 500mA, slightly lower current rating
  • MMBF170LT1G (onsemi) — 60V, 500mA, slightly lower current rating
  • PMV450ENEAR (Nexperia USA Inc.) — 60V, 800mA, higher current capability, automotive qualified

Category 3: Limited Current Substitutes (Vdss ≥ 55V, Id < 540mA)

  • BSS138LT1G (onsemi) — 50V, 200mA, reduced current capability
  • BSS138LT3G (onsemi) — 50V, 200mA, reduced current capability

Category 4: Enhanced Performance Substitutes (Vdss ≥ 55V, Id >> 540mA)

  • PJA3460-AU_R1_000A1 (Panjit International Inc.) — 60V, 2.5A, automotive qualified
  • PJA3460_R1_00001 (Panjit International Inc.) — 60V, 2.5A, automotive qualified

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (mA) Rds On (mOhm) Vgs(th) (V) Qg (nC) Ciss (pF) Power Diss. (mW) Package Status
BSS670S2L Infineon 55 540 650 @ 270mA, 10V 2 @ 2.7µA 2.26 @ 10V 75 @ 25V 360 (Ta) SOT-23-3 Obsolete
BSS670S2LH6327XTSA1 Infineon 55 540 650 @ 270mA, 10V 2 @ 2.7µA 2.26 @ 10V 75 @ 25V 360 (Ta) SOT-23-3 Active
MMBF170-7-F Diodes Inc. 60 500 5 @ 200mA, 10V 3 @ 250µA 40 @ 10V 300 (Ta) SOT-23-3 Active
MMBF170LT1G onsemi 60 500 5 @ 200mA, 10V 3 @ 1mA 60 @ 10V 225 (Ta) SOT-23-3 Active
BSS138LT1G onsemi 50 200 3.5 @ 200mA, 5V 1.5 @ 1mA 50 @ 25V 225 (Ta) SOT-23-3 Active
BSS138LT3G onsemi 50 200 3.5 @ 200mA, 5V 1.5 @ 1mA 50 @ 25V 225 (Ta) SOT-23-3 Active
PMV450ENEAR Nexperia 60 800 380 @ 900mA, 10V 2.7 @ 250µA 3.6 @ 10V 101 @ 30V 323 (Ta), 554 (Tc) TO-236AB Active
PJA3460-AU_R1_000A1 Panjit 60 2500 75 @ 2A, 10V 2.5 @ 250µA 9.3 @ 10V 509 @ 15V 1250 (Ta) SOT-23 Active
PJA3460_R1_00001 Panjit 60 2500 75 @ 2A, 10V 2.5 @ 250µA 9.3 @ 10V 509 @ 15V 1250 (Ta) SOT-23 Active

Engineering Selection Recommendations

Primary Recommendation: BSS670S2LH6327XTSA1

The BSS670S2LH6327XTSA1 from Infineon Technologies is the direct parametric equivalent to the obsolete BSS670S2L. This part maintains identical electrical specifications across all critical parameters: 55V Vdss, 540mA continuous drain current, 650mOhm Rds On, and 360mW power dissipation. The device is classified as Active product status with ROHS3 compliance and REACH Unaffected designation. Inventory availability is substantial at 236,200 pieces. This substitution requires no circuit redesign and provides pin-for-pin compatibility in SOT-23-3 packaging.

Secondary Recommendation: PMV450ENEAR

The PMV450ENEAR from Nexperia USA Inc. is suitable for applications where higher current capability is beneficial. This device provides 60V Vdss and 800mA continuous drain current, exceeding the original 540mA specification. The part carries automotive qualification (AEC-Q101) and is Active status with ROHS3 compliance. Rds On is lower at 380mOhm, providing improved efficiency. This substitution is appropriate for designs that can tolerate the slightly higher gate charge (3.6nC vs. 2.26nC) and input capacitance (101pF vs. 75pF).

Tertiary Recommendation: MMBF170-7-F or MMBF170LT1G

The MMBF170 series from Diodes Incorporated or onsemi provides 60V Vdss with 500mA continuous drain current. These devices are suitable for applications where the 540mA specification is not a hard requirement. Both manufacturers offer Active status products with ROHS3 compliance. The MMBF170-7-F exhibits superior Rds On performance at 5mOhm compared to the original 650mOhm, indicating lower on-state losses.

Not Recommended: BSS138LT1G, BSS138LT3G

The BSS138 series from onsemi is not suitable as a direct substitute. These devices are rated for only 50V Vdss and 200mA continuous drain current, both significantly below the original BSS670S2L specifications. Use of these parts would require circuit redesign and is only appropriate for applications with reduced voltage and current requirements.

Not Recommended: PJA3460 Series

The PJA3460-AU_R1_000A1 and PJA3460_R1_00001 from Panjit International Inc. are over-specified for most applications requiring the BSS670S2L. These devices provide 2.5A continuous drain current and 1.25W power dissipation, representing a significant performance increase. While automotive qualified (AEC-Q101), the substantially higher gate charge (9.3nC) and input capacitance (509pF) may introduce circuit performance changes requiring validation.

Frequently Asked Questions (FAQ)

Q1: Can BSS670S2LH6327XTSA1 be used as a direct replacement for BSS670S2L?

Yes. The BSS670S2LH6327XTSA1 is a parametric equivalent with identical electrical specifications and SOT-23-3 package compatibility. No circuit modifications are required. The primary difference is product status: BSS670S2LH6327XTSA1 is Active while BSS670S2L is Obsolete.

Q2: What is the key difference between BSS670S2L and MMBF170-7-F?

The primary electrical difference is continuous drain current: BSS670S2L is rated for 540mA while MMBF170-7-F is rated for 500mA. Both devices share 55V/60V Vdss ratings and SOT-23-3 packaging. MMBF170-7-F exhibits significantly lower Rds On (5mOhm vs. 650mOhm), resulting in reduced on-state power dissipation.

Q3: Why is PMV450ENEAR recommended as a secondary option?

PMV450ENEAR provides higher current capability (800mA vs. 540mA) and lower Rds On (380mOhm vs. 650mOhm), offering improved performance headroom. The device carries automotive qualification (AEC-Q101) and is suitable for applications requiring enhanced reliability. Higher gate charge and input capacitance may require circuit validation.

Q4: Can BSS138LT1G replace BSS670S2L?

No. BSS138LT1G is not suitable as a substitute. This device is rated for only 50V Vdss and 200mA continuous drain current, both significantly below BSS670S2L specifications. Use would require substantial circuit redesign and is only appropriate for applications with reduced voltage and current requirements.

Q5: What does "Parametric Equivalent" mean in the context of MOSFET substitution?

A parametric equivalent maintains identical or functionally equivalent electrical specifications across all critical parameters: Vdss, Id, Rds On, Vgs(th), gate charge, input capacitance, and power dissipation. Parametric equivalents typically require no circuit modifications and provide pin-for-pin compatibility.

Q6: Are all substitute parts RoHS3 compliant?

Yes. All substitute parts listed in this document carry ROHS3 Compliant designation. All parts also carry REACH Unaffected status, indicating compliance with European chemical regulations.

Q7: What is the significance of MSL (Moisture Sensitivity Level)?

All parts listed, including BSS670S2L and all substitutes, carry MSL 1 (Unlimited) designation. This indicates the lowest moisture sensitivity classification, meaning these components do not require special moisture control during storage, handling, or assembly.

Q8: Can PJA3460 series parts be used in place of BSS670S2L?

PJA3460 series parts are over-specified for most applications. While electrically compatible (60V Vdss exceeds 55V requirement), the 2.5A continuous drain current and 1.25W power dissipation represent significant performance increases. Gate charge (9.3nC) and input capacitance (509pF) are substantially higher, potentially affecting circuit switching characteristics. Use requires circuit validation.

Q9: What is the difference between BSS670S2LH6327XTSA1 packaging options?

BSS670S2LH6327XTSA1 is available in Cut Tape (CT) and Digi-Reel® packaging formats. Both formats provide the same electrical device in SOT-23-3 package. Selection depends on assembly process requirements and volume considerations.

Q10: How do I determine which substitute is appropriate for my application?

Evaluate your application requirements against the following criteria: (1) Required Vdss rating — all substitutes meet or exceed 55V; (2) Required Id rating — BSS670S2LH6327XTSA1, MMBF170 series, and PMV450ENEAR meet or exceed 540mA; (3) Power dissipation budget — lower Rds On devices (MMBF170, PMV450ENEAR) reduce on-state losses; (4) Switching speed requirements — lower gate charge and input capacitance favor BSS670S2LH6327XTSA1 and MMBF170 series; (5) Automotive qualification — PMV450ENEAR and PJA3460 series carry AEC-Q101.

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