BSS225L6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BSS225L6327HTSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 600V drain-to-source voltage with 90mA continuous drain current at 25°C. This device is housed in a PG-SOT89 surface mount package and is part of the SIPMOS® series. The part is currently classified as obsolete, making identification of active equivalent alternatives essential for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	90	mA
Rds On (Max) @ 90mA, 10V	45	Ohm
Vgs(th) (Max) @ 94µA	2.3	V
Gate Charge (Qg) (Max) @ 10V	5.8	nC
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ 25V	131	pF
Power Dissipation (Max)	1	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-243AA	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the obsolete BSS225L6327HTSA1 is determined by strict electrical and mechanical parameter matching within the MOSFET category. The following criteria establish equivalence:

Electrical Parameters (Critical):

Drain to Source Voltage (Vdss): 600V
Continuous Drain Current (Id) @ 25°C: 90mA
On-State Resistance (Rds On) @ 90mA, 10V: 45 Ohm
Gate Threshold Voltage (Vgs(th)): 2.3V @ 94µA
Gate Charge (Qg): 5.8 nC @ 10V
Maximum Gate Voltage (Vgs): ±20V
Input Capacitance (Ciss): 131 pF @ 25V
Power Dissipation: 1W

Mechanical Parameters (Critical):

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Moisture Sensitivity Level: 1 (Unlimited)

Compliance Parameters:

REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

Substitute parts BSS225H6327FTSA1 and BSS225H6327XTSA1 meet all electrical and mechanical requirements. The primary distinction between the main part and substitutes is product status (obsolete versus active) and packaging format (bulk versus tape & reel).

Parameter Comparison

Parameter	BSS225L6327HTSA1	BSS225H6327FTSA1	BSS225H6327XTSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Obsolete	Active	Active
FET Type	N-Channel	N-Channel	N-Channel
Vdss	600V	600V	600V
Id @ 25°C	90mA	90mA	90mA
Rds On (Max) @ 90mA, 10V	45 Ohm	45 Ohm	45 Ohm
Vgs(th) (Max) @ 94µA	2.3V	2.3V	2.3V
Qg (Max) @ 10V	5.8 nC	5.8 nC	5.8 nC
Vgs (Max)	±20V	±20V	±20V
Ciss (Max) @ 25V	131 pF	131 pF	131 pF
Power Dissipation (Max)	1W	1W	1W
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package / Case	TO-243AA	TO-243AA	TO-243AA
Mounting Type	Surface Mount	Surface Mount	Surface Mount
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Active Production and New Designs:

BSS225H6327FTSA1 and BSS225H6327XTSA1 are both active products from Infineon Technologies and are recommended as direct replacements for the obsolete BSS225L6327HTSA1. Both substitute parts maintain identical electrical performance and mechanical compatibility.

Packaging Consideration:

BSS225H6327FTSA1 is supplied in Tape & Reel (TR) format, suitable for automated assembly processes. BSS225H6327XTSA1 packaging format is not specified in the provided data. For high-volume production, verify packaging availability with the supplier.

Compliance Status:

Both substitute parts carry ROHS3 Compliance certification, providing regulatory advantage over the main part for which RoHS status is not specified. Both maintain REACH Unaffected status and identical ECCN and HTSUS classifications.

Inventory Availability:

Current stock levels are: BSS225H6327FTSA1 (1207 pcs), BSS225H6327XTSA1 (727 pcs). The original part BSS225L6327HTSA1 shows 698 pcs in stock but is obsolete.

Frequently Asked Questions (FAQ)

Q: Can BSS225H6327FTSA1 or BSS225H6327XTSA1 be used as direct replacements for BSS225L6327HTSA1?

A: Yes. Both substitute parts are parametrically equivalent across all critical electrical specifications (Vdss, Id, Rds On, Vgs(th), Qg, Ciss) and mechanical parameters (package type TO-243AA, surface mount, MSL 1). They are manufactured by the same supplier (Infineon Technologies) and are part of the same SIPMOS® series.

Q: What is the difference between BSS225H6327FTSA1 and BSS225H6327XTSA1?

A: Both parts are electrically and mechanically identical. The primary difference is packaging format: BSS225H6327FTSA1 is supplied in Tape & Reel (TR) format for automated assembly, while BSS225H6327XTSA1 packaging format is not specified in the provided documentation. Verify specific packaging requirements with your procurement department.

Q: Why is the original BSS225L6327HTSA1 classified as obsolete?

A: Product status is determined by the manufacturer. The obsolete designation indicates that Infineon Technologies has discontinued active production and support for this specific part number variant. Active equivalents (BSS225H6327FTSA1 and BSS225H6327XTSA1) are available for continued design support.

Q: Are there any thermal or performance differences between these parts?

A: No. All three parts share identical thermal specifications: 1W maximum power dissipation and -55°C to 150°C operating temperature range. On-state resistance (Rds On) is 45 Ohm at 90mA and 10V gate voltage for all three parts.

Q: Do the substitute parts meet current regulatory requirements?

A: Yes. Both BSS225H6327FTSA1 and BSS225H6327XTSA1 are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory standards. The original part does not specify RoHS status.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes. All three parts use the same TO-243AA package and surface mount configuration. PCB footprints, solder pad layouts, and component placement are identical. No design modifications are required for substitution.

Q: What is the gate charge specification and why is it important?

A: Gate charge (Qg) is specified as 5.8 nC at 10V for all three parts. This parameter determines the energy required to switch the MOSFET on and off, affecting switching speed and driver circuit design. Identical gate charge ensures equivalent switching performance.

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