BSS138N E7854 Equivalent & Substitute Parts

Part Overview

The BSS138N E7854 is an N-Channel 60V 230mA MOSFET manufactured by Infineon Technologies in SOT-23-3 surface mount packaging. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and ongoing production requirements. The BSS138N E7854 operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 360mW and features a gate charge specification of 1.4 nC at 10V.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	230	mA
Rds On (Max) @ 230mA, 10V	3.5	Ohm
Vgs(th) (Max) @ 250µA	1.4	V
Gate Charge (Qg) @ 10V	1.4	nC
Input Capacitance (Ciss) @ 25V	41	pF
Power Dissipation (Max)	360	mW
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BSS138N E7854 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel topology
Drain to Source Voltage (Vdss): Minimum 60V (equal or greater)
Continuous Drain Current (Id): Minimum 200mA (equal or greater)
Rds On (Max): 3.5 Ohm or lower at specified gate voltage
Package / Case: TO-236-3, SC-59, or SOT-23-3 (identical footprint)
Mounting Type: Surface Mount
Operating Temperature Range: Minimum -55°C to 150°C

Secondary Compatibility Parameters:

Vgs(th) (Max): Threshold voltage compatibility for gate drive circuits
Gate Charge (Qg): Switching speed and drive circuit requirements
Input Capacitance (Ciss): Gate drive current and switching characteristics
Power Dissipation: Thermal management capability
Moisture Sensitivity Level: Handling and storage requirements

Substitute parts are grouped into two categories:

Category A – Direct Electrical Equivalents (60V Rating): Parts maintaining the 60V Vdss specification with drain current ratings of 200mA or greater, ensuring full compatibility with the original design specifications.

Category B – Functional Alternatives (50V Rating): Parts with reduced Vdss rating (50V) but equivalent or superior electrical performance in other parameters. These are suitable for applications where the 60V rating provides design margin and the actual operating voltage does not exceed 50V.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On (Ohm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pdiss (mW)	Temp Range (°C)	Status
BSS138N E7854	Infineon Technologies	60	230	3.5	1.4	1.4	41	360	-55 to 150	Obsolete
ZVN4106FTA	Diodes Incorporated	60	200	2.5	3.0	—	35	350	-55 to 150	Active
NX7002BKR	Nexperia USA Inc.	60	270	2.8	2.1	1.0	23.6	310	-55 to 150	Active
2N7002-TP	Micro Commercial Co	60	115	7.5	2.5	—	50	200	-55 to 150	Active
PMBF170,235	Nexperia USA Inc.	60	300	5.0	2.0	—	40	830	-65 to 150	Not For New Designs
DMN601K-7	Diodes Incorporated	60	300	2.0	2.5	—	50	350	-65 to 150	Active
BSS138	Good-Ark Semiconductor	50	220	3.5	1.5	2.4	30	430	-55 to 175	Active
BSS138-7-F	Diodes Incorporated	50	200	3.5	1.5	—	50	300	-55 to 150	Active
BSS138L	onsemi	50	200	3.5	1.5	2.4	50	350	-55 to 150	Active
BSS138LT1G	onsemi	50	200	3.5	1.5	—	50	225	-55 to 150	Active
BSS138LT3G	onsemi	50	200	3.5	1.5	—	50	225	-55 to 150	Active

Engineering Selection Recommendations

For Direct Replacement (60V Vdss Requirement):

The NX7002BKR (Nexperia USA Inc.) provides the closest electrical match to the BSS138N E7854. This device maintains the 60V Vdss specification, exceeds the drain current requirement at 270mA, and delivers superior on-resistance performance at 2.8 Ohm. The NX7002BKR is RoHS3 compliant and carries active product status, ensuring long-term availability and supply chain stability.

The DMN601K-7 (Diodes Incorporated) offers enhanced performance with 300mA drain current capability and 2.0 Ohm on-resistance. This device is suitable for applications requiring higher current handling or lower conduction losses. The extended operating temperature range to -65°C provides additional thermal margin.

The ZVN4106FTA (Diodes Incorporated) maintains 60V Vdss with 200mA drain current and 2.5 Ohm on-resistance. This part is appropriate for applications where the original 230mA specification provides design margin.

For Reduced Voltage Applications (50V Vdss Acceptable):

The BSS138L (onsemi) and BSS138LT1G (onsemi) are active alternatives when the application voltage does not exceed 50V. These devices feature identical on-resistance (3.5 Ohm) and comparable drain current (200mA) to the original part. The BSS138LT1G offers reduced power dissipation at 225mW, beneficial for thermal-constrained designs.

The BSS138 (Good-Ark Semiconductor) provides 220mA drain current with 3.5 Ohm on-resistance and extended operating temperature to 175°C, suitable for high-temperature applications.

Parts Not Recommended for New Designs:

The PMBF170,235 (Nexperia USA Inc.) carries a "Not For New Designs" status and should not be selected for new development projects despite its 60V rating and 300mA capability.

The 2N7002-TP (Micro Commercial Co) exhibits significantly higher on-resistance (7.5 Ohm) and reduced drain current (115mA), making it unsuitable as a direct replacement.

Frequently Asked Questions (FAQ)

Q: Can the BSS138N E7854 be replaced with a 50V rated MOSFET?

A: Yes, provided the application circuit operates at voltages not exceeding 50V. The BSS138L, BSS138LT1G, BSS138-7-F, and BSS138 (Good-Ark) are all active 50V alternatives with equivalent or superior electrical characteristics. The 60V rating of the original part provides design margin; if this margin is not required, 50V devices are functionally compatible.

Q: What is the primary difference between NX7002BKR and DMN601K-7?

A: Both devices maintain 60V Vdss and are active products. The DMN601K-7 offers superior on-resistance (2.0 Ohm versus 2.8 Ohm) and higher drain current capability (300mA versus 270mA), resulting in lower conduction losses. The NX7002BKR features lower gate charge (1.0 nC versus unspecified) and lower input capacitance (23.6 pF versus 50 pF), resulting in faster switching characteristics. Selection depends on whether the application prioritizes conduction efficiency or switching speed.

Q: Are all substitute parts available in the same SOT-23-3 package?

A: Yes. All listed substitute parts are packaged in TO-236-3, SC-59, or SOT-23-3 configurations, which are mechanically and electrically identical. PCB footprints are directly compatible without modification.

Q: What is the significance of the gate charge (Qg) specification?

A: Gate charge determines the amount of charge required to switch the MOSFET on or off. Lower gate charge reduces gate drive circuit current requirements and enables faster switching transitions. The BSS138N E7854 specifies 1.4 nC at 10V. The NX7002BKR (1.0 nC) enables faster switching, while the BSS138L and BSS138LT1G (2.4 nC) require slightly higher gate drive current but remain compatible with standard gate drive circuits.

Q: Why is the PMBF170,235 not recommended despite meeting electrical specifications?

A: The PMBF170,235 carries a "Not For New Designs" product status designation. This classification indicates that the manufacturer has discontinued active development and support for this device. New designs should utilize active products with guaranteed long-term availability and manufacturer support.

Q: What is the impact of on-resistance (Rds On) on circuit performance?

A: On-resistance directly affects conduction losses and heat dissipation. Lower on-resistance reduces power loss and thermal generation. The BSS138N E7854 specifies 3.5 Ohm at 230mA and 10V gate voltage. The DMN601K-7 (2.0 Ohm) and NX7002BKR (2.8 Ohm) reduce conduction losses by approximately 43% and 20%, respectively, compared to the original specification.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed carry RoHS3 compliance certification. The PMBF170,235, despite RoHS3 compliance, is not recommended due to its "Not For New Designs" status.

Q: What is the difference between the onsemi BSS138L variants (BSS138LT1G and BSS138LT3G)?

A: The BSS138LT1G and BSS138LT3G are functionally identical with respect to electrical specifications. Both devices feature 50V Vdss, 200mA drain current, 3.5 Ohm on-resistance, and 225mW power dissipation. The designations reflect different manufacturing tape and reel configurations or date codes. Selection between these variants is based on packaging and supply chain availability rather than electrical performance.

Q: Can the BSS138N E7854 be used in high-frequency switching applications?

A: The gate charge specification (1.4 nC at 10V) and input capacitance (41 pF at 25V) indicate moderate switching speed capability. For applications requiring faster switching transitions, the NX7002BKR with lower gate charge (1.0 nC) and reduced input capacitance (23.6 pF) is preferred. The DMN601K-7 and ZVN4106FTA are also suitable alternatives with comparable switching characteristics.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message