BSS123_D87Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The BSS123_D87Z is an N-Channel enhancement-mode MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 170mA continuous drain current at 25°C. The device is housed in a SOT-23-3 surface mount package and is designed for general-purpose switching applications. The BSS123_D87Z is classified as obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. Equivalent parts maintain identical electrical and mechanical specifications, while substitute parts provide functional alternatives within defined parameter tolerances.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	170	mA
On-State Resistance (Rds On) @ 170mA, 10V	6	Ohm
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA	2	V
Gate Charge (Qg) @ 10V	2.5	nC
Input Capacitance (Ciss) @ 25V	73	pF
Power Dissipation (Max)	360	mW
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-3	—
Mounting Type	Surface Mount	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BSS123_D87Z is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 170mA minimum at 25°C
On-State Resistance (Rds On): 6 Ohm maximum at specified conditions
Gate-Source Threshold Voltage (Vgs(th)): 2V to 2.8V range
Package Type: SOT-23-3 or equivalent TO-236-3/SC-59 footprint
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C minimum

Acceptable Variation Ranges:

Drain current may exceed 170mA (higher current capability acceptable)
Power dissipation may vary within thermal design constraints
Input capacitance and gate charge variations are acceptable if electrical performance is maintained
Vgs(th) variations within 0.6V of specified value are acceptable

Substitute parts are grouped into three categories: direct manufacturer equivalents from onsemi, cross-manufacturer alternatives with identical specifications, and parametric equivalents from alternative manufacturers that meet or exceed performance requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On @ 10V (Ohm)	Vgs(th) @ 1mA (V)	Qg @ 10V (nC)	Ciss @ 25V (pF)	Power Diss. (mW)	Package	Product Status
BSS123_D87Z	onsemi	100	170	6	2.0	2.5	73	360	SOT-23-3	Obsolete
BSS123L	onsemi	100	170	6	2.0	2.5	21.5	360	SOT-23-3	Active
BSS123LT1G	onsemi	100	170	6	2.6	—	20	225	SOT-23-3	Active
BSS123	ANBON SEMICONDUCTOR	100	200	5	2.5	1.8	14	350	SOT-23	Active
BSS123-7-F	Diodes Incorporated	100	170	6	2.0	—	60	300	SOT-23-3	Active
BSS119NH6327XTSA1	Infineon Technologies	100	190	6	2.3	0.6	20.9	500	PG-SOT23	Active
BSS123,215	Nexperia USA Inc.	100	150	6	2.8	—	40	250	TO-236AB	Not For New Designs
BSS123Q-7	Diodes Incorporated	100	170	6	2.0	—	60	300	SOT-23-3	Active
BSS123TA	Diodes Incorporated	100	170	6	2.0	—	20	360	SOT-23-3	Active
PMV213SN,215	Nexperia USA Inc.	100	1900	0.25	4.0	7	330	TO-236AB	Not For New Designs

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

BSS123L (onsemi) — Active product status. Identical electrical specifications to BSS123_D87Z with reduced input capacitance (21.5 pF vs. 73 pF). RoHS3 compliant. Maintains SOT-23-3 package compatibility. Recommended as primary replacement due to onsemi manufacturer continuity and active product status.

BSS123LT1G (onsemi) — Active product status. Meets all critical parameters with Vgs(th) of 2.6V within acceptable range. Reduced power dissipation (225 mW) and input capacitance (20 pF). RoHS3 compliant. Suitable for applications where lower power dissipation is beneficial. Highest inventory availability (149,896 units).

BSS123TA (Diodes Incorporated) — Active product status. Exact electrical match to BSS123_D87Z with 170mA drain current and 360mW power dissipation. RoHS3 compliant. SOT-23-3 package. Recommended for applications requiring identical thermal characteristics.

Secondary Substitutes (Functional Alternatives):

BSS123-7-F (Diodes Incorporated) — Active product status. Meets all critical parameters with 170mA drain current and 6 Ohm Rds On. Reduced power dissipation (300 mW). RoHS3 compliant. SOT-23-3 package. Suitable where lower thermal load is acceptable.

BSS123Q-7 (Diodes Incorporated) — Active product status with AEC-Q101 automotive qualification. Identical electrical specifications to BSS123_D87Z. Tape & Reel packaging. RoHS3 compliant. Recommended for automotive applications requiring qualification documentation.

BSS119NH6327XTSA1 (Infineon Technologies) — Active product status. Exceeds drain current specification (190 mA vs. 170 mA). Reduced gate charge (0.6 nC) and input capacitance (20.9 pF). Higher power dissipation (500 mW). PG-SOT23 package maintains footprint compatibility. Suitable for applications requiring enhanced switching performance.

BSS123 (ANBON SEMICONDUCTOR) — Active product status. Exceeds drain current (200 mA) and reduces Rds On (5 Ohm). Reduced gate charge (1.8 nC) and input capacitance (14 pF). RoHS3 compliant. Parametric equivalent suitable for performance-enhanced applications.

Not Recommended for New Designs:

BSS123,215 (Nexperia USA Inc.) — Product status "Not For New Designs." Reduced drain current (150 mA) below specification. Acceptable only for legacy system maintenance.

PMV213SN,215 (Nexperia USA Inc.) — Product status "Not For New Designs." Significantly different electrical characteristics (1.9A drain current, 250 mOhm Rds On, 4V Vgs(th)). Not suitable as substitute. Included for reference only.

Frequently Asked Questions (FAQ)

Q: Can BSS123L be used as a direct replacement for BSS123_D87Z?

A: Yes. BSS123L maintains identical drain-to-source voltage (100V), continuous drain current (170mA), and on-state resistance (6 Ohm) specifications. The reduced input capacitance (21.5 pF vs. 73 pF) is a performance improvement. Both devices use SOT-23-3 packaging and operate across -55°C to 150°C. BSS123L is active product status, making it the recommended primary replacement.

Q: What is the difference between BSS123LT1G and BSS123TA?

A: Both are active onsemi and Diodes Incorporated products respectively, with identical 100V/170mA/6 Ohm specifications. BSS123LT1G has lower power dissipation (225 mW vs. 360 mW) and lower input capacitance (20 pF vs. 20 pF). BSS123TA matches the original 360 mW power dissipation. Selection depends on thermal design requirements. BSS123LT1G offers superior availability (149,896 units).

Q: Is the BSS123,215 suitable for new designs?

A: No. BSS123,215 carries "Not For New Designs" product status. Additionally, the 150 mA drain current specification falls below the 170 mA requirement. This part is suitable only for legacy system maintenance where existing designs already incorporate this component.

Q: Can BSS119NH6327XTSA1 replace BSS123_D87Z in all applications?

A: BSS119NH6327XTSA1 meets or exceeds all critical electrical parameters (100V Vdss, 190mA Id, 6 Ohm Rds On). The PG-SOT23 package maintains SOT-23-3 footprint compatibility. However, the higher power dissipation (500 mW vs. 360 mW) requires thermal design verification. The reduced gate charge (0.6 nC) and input capacitance (20.9 pF) provide faster switching characteristics. Suitable for applications where enhanced performance is beneficial.

Q: What is the significance of the Vgs(th) variation between substitute parts?

A: Gate-source threshold voltage (Vgs(th)) determines the gate voltage required to turn the MOSFET on. The BSS123_D87Z specifies 2.0V at 1mA. Substitute parts range from 2.0V to 2.8V. This 0.8V variation is within acceptable engineering tolerance for general-purpose switching applications. Applications with precise gate drive timing may require verification of specific Vgs(th) values.

Q: Are all substitute parts RoHS3 compliant?

A: All active product status substitutes listed (BSS123L, BSS123LT1G, BSS123-7-F, BSS119NH6327XTSA1, BSS123Q-7, BSS123TA, and BSS123 from ANBON) are RoHS3 compliant. Parts marked "Not For New Designs" (BSS123,215 and PMV213SN,215) are also RoHS3 compliant but should not be used in new designs.

Q: What packaging options are available for BSS123_D87Z substitutes?

A: All recommended substitutes use SOT-23-3 or equivalent TO-236-3/SC-59 surface mount packages, maintaining PCB footprint compatibility. BSS119NH6327XTSA1 uses PG-SOT23 variant, which maintains the same pinout and footprint. Packaging variations (Cut Tape, Digi-Reel, Tape & Reel) affect procurement and handling but do not impact electrical performance or board-level compatibility.

Q: Which substitute offers the best thermal performance?

A: BSS123LT1G offers the lowest power dissipation at 225 mW, providing superior thermal performance. BSS123-7-F and BSS123Q-7 offer 300 mW dissipation. For applications with strict thermal constraints, BSS123LT1G is recommended. For applications requiring exact thermal matching to the original 360 mW specification, BSS123TA or BSS123_D87Z equivalents are appropriate.

Q: Is automotive qualification available for BSS123_D87Z substitutes?

A: Yes. BSS123Q-7 (Diodes Incorporated) carries AEC-Q101 automotive qualification. This part is suitable for automotive applications requiring qualified component documentation. Other substitutes do not list automotive qualification in provided specifications.

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