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BSS123-7 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The BSS123-7 is an N-Channel MOSFET manufactured by Diodes Incorporated, rated for 100V drain-to-source voltage with 170mA continuous drain current in a surface mount SOT-23-3 package. This device is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing production and design requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating packaging and compliance requirements.
Substiute Parts
Key Parameters
| Parameter | BSS123-7 Specification |
|---|---|
| FET Type | N-Channel |
| Drain-to-Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) @ 25°C | 170 mA (Ta) |
| On-Resistance (Rds On) @ Id, Vgs | 6 Ohm @ 170 mA, 10V |
| Gate-Source Threshold Voltage (Vgs(th)) @ Id | 2 V @ 1 mA |
| Gate-Source Voltage (Vgs Max) | ±20 V |
| Power Dissipation (Max) | 300 mW (Ta) |
| Operating Temperature Range | -55°C to 150°C (TJ) |
| Package Type | SOT-23-3 (TO-236-3, SC-59) |
| Mounting Type | Surface Mount |
| RoHS Status | RoHS Non-Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution eligibility for the BSS123-7 is determined by the following critical parameters:
Electrical Compatibility Requirements:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 100 V
- Continuous Drain Current (Id): Must equal or exceed 170 mA at 25°C
- On-Resistance (Rds On): Must not exceed 6 Ohm at specified gate-source voltage
- Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with 2 V @ 1 mA specification
- Gate-Source Voltage Range (Vgs): Must accommodate ±20 V maximum rating
- Power Dissipation: Must support thermal requirements at 300 mW minimum
Mechanical Compatibility Requirements:
- Package Type: SOT-23-3 (TO-236-3, SC-59) surface mount configuration
- Mounting Type: Surface mount only
- Pin Configuration: Three-terminal FET (Gate, Drain, Source)
Regulatory & Compliance Considerations:
- RoHS Status: Preference for RoHS3 compliant alternatives where available
- Moisture Sensitivity Level: MSL 1 (Unlimited) preferred
- REACH Status: REACH Unaffected required
Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary electrical specifications) and Enhanced Performance Alternatives (exceeding minimum specifications while maintaining backward compatibility).
Parameter Comparison
| Parameter | BSS123-7 | BSS123-7-F | BSS123TA | BSS119NH6327XTSA1 | BSS123,215 | BSS123LT1G | PMV213SN,215 |
|---|---|---|---|---|---|---|---|
| Manufacturer | Diodes Inc. | Diodes Inc. | Diodes Inc. | Infineon | Nexperia | onsemi | Nexperia |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Vdss (V) | 100 | 100 | 100 | 100 | 100 | 100 | 100 |
| Id @ 25°C (mA) | 170 | 170 | 170 | 190 | 150 | 170 | 1900 |
| Rds On (Ohm) | 6 @ 170mA, 10V | 6 @ 170mA, 10V | 6 @ 100mA, 10V | 6 @ 190mA, 10V | 6 @ 120mA, 10V | 6 @ 100mA, 10V | 0.25 @ 500mA, 10V |
| Vgs(th) (V) | 2 @ 1mA | 2 @ 1mA | 2 @ 1mA | 2.3 @ 13µA | 2.8 @ 1mA | 2.6 @ 1mA | 4 @ 1mA |
| Vgs Max (V) | ±20 | ±20 | ±20 | ±20 | ±20 | ±20 | ±30 |
| Ciss (pF) | 60 @ 25V | 60 @ 25V | 20 @ 25V | 20.9 @ 25V | 40 @ 25V | 20 @ 25V | 330 @ 20V |
| Power Dissipation (mW) | 300 | 300 | 360 | 500 | 250 | 225 | 280 |
| Operating Temp (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 |
| Package | SOT-23-3 | SOT-23-3 | SOT-23-3 | PG-SOT23 | TO-236AB | SOT-23-3 | TO-236AB |
| Product Status | Discontinued | Active | Active | Active | Not For New Designs | Active | Not For New Designs |
| RoHS Status | Non-Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
Primary Recommendation: BSS123-7-F
The BSS123-7-F is the direct equivalent of the BSS123-7, manufactured by Diodes Incorporated with identical electrical specifications. This part maintains 100V Vdss, 170mA continuous drain current, and 6 Ohm on-resistance. The BSS123-7-F is currently active in production with ROHS3 compliance and 107,300 units in stock, providing immediate availability and regulatory alignment for new designs.
Secondary Recommendation: BSS123LT1G
The BSS123LT1G, manufactured by onsemi, meets all electrical requirements of the BSS123-7 with 100V Vdss and 170mA drain current. This part offers enhanced thermal performance with 225mW power dissipation and reduced input capacitance (20 pF vs. 60 pF), resulting in improved switching characteristics. The device is ROHS3 compliant and maintains 149,896 units in stock. The lower input capacitance reduces gate drive requirements in high-frequency switching applications.
Alternative Recommendation: BSS123TA
The BSS123TA, also from Diodes Incorporated, provides enhanced power dissipation capability at 360mW compared to the original 300mW specification. This part maintains electrical compatibility with 100V Vdss, 170mA drain current, and 6 Ohm on-resistance. The BSS123TA is ROHS3 compliant and active in production with 2,719 units available. The increased thermal headroom accommodates applications with higher ambient temperatures or continuous operation at maximum current.
Higher Current Alternative: BSS119NH6327XTSA1
The BSS119NH6327XTSA1 from Infineon Technologies exceeds the BSS123-7 specifications with 190mA continuous drain current and 500mW power dissipation. This OptiMOS™ series device maintains 100V Vdss and 6 Ohm on-resistance while offering superior thermal performance. The part is ROHS3 compliant and active in production with 5,400 units in stock. This device is suitable for applications requiring enhanced current handling or thermal margin.
Not Recommended for New Designs:
The BSS123,215 (Nexperia) and PMV213SN,215 (Nexperia) are marked "Not For New Designs" and should not be selected for new product development. The PMV213SN,215 exhibits significantly different electrical characteristics (1.9A drain current, 250mOhm on-resistance, 4V threshold voltage) and is not a direct equivalent despite package compatibility.
Frequently Asked Questions (FAQ)
Q: Can the BSS123-7-F be used as a direct replacement for the BSS123-7?
A: Yes. The BSS123-7-F is manufactured by Diodes Incorporated with identical electrical specifications: 100V Vdss, 170mA continuous drain current, 6 Ohm on-resistance, and SOT-23-3 package. The primary difference is product status (active vs. discontinued) and RoHS compliance (ROHS3 vs. non-compliant). Pin configuration and electrical performance are equivalent.
Q: What is the difference between BSS123-7-F and BSS123LT1G?
A: Both parts meet the electrical requirements of the BSS123-7 with 100V Vdss and 170mA drain current. The BSS123LT1G offers lower input capacitance (20 pF vs. 60 pF) and reduced power dissipation (225mW vs. 300mW), resulting in faster switching response and lower thermal generation. The BSS123LT1G is manufactured by onsemi, while BSS123-7-F is from Diodes Incorporated. Both are ROHS3 compliant and actively produced.
Q: Is the BSS119NH6327XTSA1 a suitable replacement?
A: The BSS119NH6327XTSA1 exceeds the BSS123-7 specifications with 190mA drain current (vs. 170mA) and 500mW power dissipation (vs. 300mW). The device maintains 100V Vdss and 6 Ohm on-resistance, ensuring backward compatibility. The higher current rating and thermal capacity make this part suitable for applications requiring enhanced performance margins. Package compatibility is maintained (SOT-23-3 equivalent).
Q: Why is the PMV213SN,215 not recommended as a substitute?
A: The PMV213SN,215 exhibits fundamentally different electrical characteristics: 1.9A drain current, 250mOhm on-resistance, and 4V gate-source threshold voltage. These specifications are not compatible with circuits designed for the BSS123-7 (170mA, 6 Ohm, 2V threshold). Additionally, this part is marked "Not For New Designs" by the manufacturer. While the package is mechanically compatible, electrical incompatibility precludes substitution.
Q: What is the significance of RoHS compliance in selecting a substitute?
A: RoHS3 compliance indicates the part meets current environmental and hazardous substance restrictions. The original BSS123-7 is RoHS non-compliant, while all recommended substitutes (BSS123-7-F, BSS123LT1G, BSS123TA, BSS119NH6327XTSA1) are ROHS3 compliant. For new product designs and manufacturing in regulated markets, ROHS3 compliance is mandatory. Existing designs using non-compliant parts may continue operation, but new production should transition to compliant alternatives.
Q: Can I use BSS123TA instead of BSS123-7-F?
A: Yes. The BSS123TA maintains all critical electrical specifications of the BSS123-7 (100V Vdss, 170mA drain current, 6 Ohm on-resistance) and offers enhanced power dissipation (360mW vs. 300mW). The increased thermal capacity provides additional margin for applications operating at elevated ambient temperatures or continuous maximum current. Both parts are manufactured by Diodes Incorporated, ROHS3 compliant, and use the SOT-23-3 package.
Q: What does "Not For New Designs" mean for BSS123,215?
A: "Not For New Designs" indicates the manufacturer (Nexperia) has discontinued active development and recommends against using this part in new product designs. While existing inventory may be available, the part will eventually reach end-of-life status. New designs should select from actively produced alternatives such as BSS123-7-F, BSS123LT1G, or BSS123TA to ensure long-term supply chain stability and manufacturer support.
Q: Are all substitute parts available in the same packaging?
A: All recommended substitutes use SOT-23-3 (TO-236-3, SC-59) surface mount packaging, maintaining mechanical and thermal compatibility with the BSS123-7. The BSS123,215 and PMV213SN,215 use TO-236AB packaging, which is mechanically compatible but represents a different variant. For PCB layout compatibility, confirm package designation matches your design specifications.
Q: What is the impact of lower input capacitance in BSS123LT1G?
A: The BSS123LT1G features 20 pF input capacitance compared to 60 pF in the BSS123-7. Lower input capacitance reduces gate charge requirements, enabling faster switching transitions and reduced gate drive power consumption. This characteristic is beneficial in high-frequency switching applications (>1 MHz) and circuits with limited gate drive current capability. For low-frequency applications (<100 kHz), the difference is negligible.
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