BSS123,215 N-Channel MOSFET 100V 150mA Equivalent & Substitute Parts

Part Overview

The BSS123,215 is an N-Channel enhancement-mode MOSFET manufactured by Nexperia USA Inc., designed for general-purpose switching and amplification applications. This device features a 100V drain-to-source voltage rating with 150mA continuous drain current capability in a surface-mount TO-236AB (SOT-23-3) package. The part is classified as "Not For New Designs," indicating it has been superseded in the manufacturer's product line. Identifying equivalent and substitute parts is necessary to support existing designs, facilitate production continuity, and enable component sourcing from alternative manufacturers while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	150	mA
Gate-Source Voltage (Vgs) Max	±20	V
On-State Drain Resistance (Rds On) @ 120mA, 10V	6	Ω
Gate Threshold Voltage (Vgs(th)) @ 1mA	2.8	V
Power Dissipation (Max)	250	mW
Operating Temperature Range	−55 to +150	°C
Package Type	TO-236-3 / SOT-23-3 / SC-59	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BSS123,215 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

FET Type: N-Channel enhancement-mode MOSFET
Drain-to-Source Voltage (Vdss): 100V minimum
Gate-Source Voltage (Vgs): ±20V maximum
Package: TO-236-3 / SOT-23-3 / SC-59 surface-mount configuration
Mounting Type: Surface Mount
Operating Temperature Range: −55°C to +150°C minimum
RoHS Compliance: ROHS3 Compliant

Allowable Parameter Variations: Substitute parts may exceed the following parameters without compromising circuit compatibility:

Continuous Drain Current (Id): 150mA or higher
On-State Drain Resistance (Rds On): 6Ω or lower (at equivalent or lower gate voltage)
Power Dissipation: 250mW or higher
Gate Threshold Voltage (Vgs(th)): Within ±0.8V of the main part specification

Substitute parts must not fall below the main part specifications for voltage ratings, current capacity, or temperature range. Parts with lower current ratings, higher on-state resistance, or reduced power dissipation capability are not suitable substitutes.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On @ 10V (Ω)	Vgs(th) @ 1mA (V)	Power Diss. (mW)	Package	Product Status
BSS123,215	Nexperia USA Inc.	100	150	6 @ 120mA	2.8	250	TO-236AB	Not For New Designs
BSS123LT1G	onsemi	100	170	6 @ 100mA	2.6	225	SOT-23-3	Active
BSS123	ANBON SEMICONDUCTOR	100	200	5 @ 200mA	2.5	350	SOT-23	Active
BSS123-7-F	Diodes Incorporated	100	170	6 @ 170mA	2.0	300	SOT-23-3	Active
BSS123L	onsemi	100	170	6 @ 170mA	2.0	360	SOT-23-3	Active
BSS123Q-7	Diodes Incorporated	100	170	6 @ 170mA	2.0	300	SOT-23-3	Active
BSS123TA	Diodes Incorporated	100	170	6 @ 100mA	2.0	360	SOT-23-3	Active
BSS123_R1_00001	Panjit International Inc.	100	170	6 @ 170mA	2.5	500	SOT-23	Active
BVSS123LT1G	onsemi	100	170	6 @ 100mA	2.8	225	SOT-23-3	Active
ZVN3310FTA	Diodes Incorporated	100	100	10 @ 500mA	2.4	330	SOT-23-3	Active
ZXMN10A07FTA	Diodes Incorporated	100	700	0.7 @ 1.5A	4.0	625	SOT-23-3	Active

Engineering Selection Recommendations

Direct Substitutes (Recommended Priority Order):

BSS123LT1G (onsemi) — Active product status. Exceeds drain current specification (170mA vs. 150mA). Identical Vdss, matching Rds On, and compatible Vgs(th). SOT-23-3 package matches mechanical requirements. ROHS3 compliant. Suitable for direct replacement in existing designs.
BVSS123LT1G (onsemi) — Active product status with AEC-Q101 automotive qualification. Electrical parameters match BSS123LT1G. Identical package and compliance ratings. Recommended for applications requiring automotive-grade components.
BSS123-7-F (Diodes Incorporated) — Active product status. Drain current specification (170mA) exceeds main part. Rds On matches at specified current. SOT-23-3 package compatible. ROHS3 compliant. Suitable for direct replacement.
BSS123TA (Diodes Incorporated) — Active product status. Drain current (170mA) exceeds specification. Rds On measured at lower current (100mA) but remains within acceptable range. SOT-23-3 package compatible. ROHS3 compliant.

Secondary Substitutes (Application-Dependent):

BSS123L (onsemi) — Active product status. Drain current (170mA) exceeds specification. Rds On matches. SOT-23-3 package compatible. ROHS3 compliant. Lower inventory availability (665 pcs).
BSS123 (ANBON SEMICONDUCTOR) — Active product status. Drain current (200mA) significantly exceeds specification. Rds On (5Ω) is superior. Higher power dissipation rating (350mW). SOT-23 package compatible. ROHS3 compliant. Suitable for applications requiring enhanced performance margin.
BSS123_R1_00001 (Panjit International Inc.) — Active product status. Drain current (170mA) exceeds specification. Rds On matches. Highest power dissipation rating (500mW). SOT-23 package compatible. ROHS3 compliant. Tape & Reel packaging available.

Limited Substitutes (Restricted Application Use):

ZVN3310FTA (Diodes Incorporated) — Active product status. Drain current specification (100mA) is below the main part requirement (150mA). Higher Rds On (10Ω) at specified current. Not recommended for applications requiring the full 150mA continuous current capability. Suitable only for reduced-current applications.
ZXMN10A07FTA (Diodes Incorporated) — Active product status. Drain current (700mA) and power dissipation (625mW) significantly exceed specification. Rds On (0.7Ω) is substantially lower. Gate threshold voltage (4.0V) differs significantly from main part. Not recommended as a direct substitute due to different electrical characteristics and application profile.

Compliance and Certification: All recommended substitute parts maintain ROHS3 compliance and MSL-1 (Unlimited) moisture sensitivity rating. BSS123Q-7 and BVSS123LT1G carry AEC-Q101 automotive qualification, suitable for automotive applications. All parts operate within the −55°C to +150°C temperature range.

Frequently Asked Questions (FAQ)

Q: Can BSS123LT1G replace BSS123,215 in existing circuit designs?

A: Yes. BSS123LT1G is a direct substitute. Both devices share identical Vdss (100V), matching Rds On (6Ω), compatible Vgs(th) specifications, and identical package geometry (SOT-23-3). The higher drain current rating (170mA vs. 150mA) provides additional design margin without affecting circuit operation.

Q: What is the difference between BSS123-7-F and BSS123TA?

A: Both are manufactured by Diodes Incorporated and share the same base part number (BSS123). BSS123-7-F has Rds On specified at 170mA, while BSS123TA specifies Rds On at 100mA. Both maintain 6Ω on-state resistance and are electrically equivalent for the BSS123,215 application. Selection depends on availability and packaging preference (Cut Tape vs. Tape & Reel).

Q: Why is ZVN3310FTA listed as a limited substitute?

A: ZVN3310FTA has a maximum continuous drain current of 100mA, which is below the BSS123,215 specification of 150mA. This part is suitable only for applications where the circuit current requirement does not exceed 100mA. For designs requiring the full 150mA capability, ZVN3310FTA is not appropriate.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitute parts are ROHS3 compliant and carry MSL-1 (Unlimited) moisture sensitivity rating, matching the main part specification.

Q: What is the significance of AEC-Q101 qualification on BVSS123LT1G and BSS123Q-7?

A: AEC-Q101 qualification indicates these parts meet automotive industry reliability and quality standards. These parts are suitable for automotive applications where such certification is required. Non-automotive applications can use either qualified or non-qualified versions interchangeably, provided electrical specifications match.

Q: Can ZXMN10A07FTA be used as a substitute for higher-current applications?

A: ZXMN10A07FTA is not recommended as a direct substitute for BSS123,215 due to significantly different electrical characteristics. The gate threshold voltage (4.0V) differs substantially from the main part (2.8V), and the on-state resistance (0.7Ω) is much lower. This part is designed for high-current switching applications and would require circuit redesign to accommodate its different operating characteristics.

Q: What packaging options are available for substitute parts?

A: All substitute parts are available in surface-mount configurations compatible with TO-236-3 / SOT-23-3 / SC-59 package specifications. Packaging formats include Cut Tape (CT) and Digi-Reel® for individual component handling, and Tape & Reel (TR) for automated assembly. Verify packaging availability with the specific manufacturer and distributor.

Q: Is BSS123 from ANBON SEMICONDUCTOR a suitable substitute?

A: Yes. BSS123 from ANBON SEMICONDUCTOR exceeds all critical specifications: 200mA drain current (vs. 150mA), 5Ω on-state resistance (vs. 6Ω), and 350mW power dissipation (vs. 250mW). The lower gate threshold voltage (2.5V vs. 2.8V) provides faster switching response. This part is suitable for direct replacement with enhanced performance margin.

Q: How do I verify compatibility before implementing a substitute part?

A: Verify that the substitute part meets or exceeds all critical parameters: Vdss ≥ 100V, Id ≥ 150mA, Rds On ≤ 6Ω, Vgs(th) within ±0.8V of 2.8V, operating temperature range −55°C to +150°C minimum, and SOT-23-3 package compatibility. Cross-reference the datasheet for the specific manufacturer variant to confirm electrical specifications and thermal characteristics.

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