BSP52T3G Equivalent & Substitute Parts

Part Overview

The BSP52T3G is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-223 package. This active product operates at maximum collector current of 1 A with a collector-emitter breakdown voltage of 80 V and maximum power dissipation of 800 mW. The device is specified for operating temperatures from -65°C to 150°C and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required, or when design specifications allow for components with enhanced electrical characteristics within the same functional category.

Key Parameters

Parameter	BSP52T3G Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) Max	1	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	1.3 @ 500µA, 500mA	V
Current - Collector Cutoff (Max)	10	µA
DC Current Gain (hFE) Min @ Ic, Vce	2000 @ 500mA, 10V	—
Power - Max	800	mW
Operating Temperature	-65 to 150	°C
Package / Case	TO-261-4, TO-261AA	—
Supplier Device Package	SOT-223	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the BSP52T3G are classified based on electrical parameter compatibility within the NPN Darlington transistor category. The primary substitution criteria are:

Critical Parameters for Substitution:

Transistor Type: NPN - Darlington configuration
Collector Current (Ic) Rating: Equal to or greater than 1 A
Collector-Emitter Breakdown Voltage: Equal to or greater than 80 V
Package Type: Surface mount SOT-223 or equivalent TO-261 variants
Vce Saturation: Compatible saturation characteristics
DC Current Gain (hFE): Minimum 2000 @ specified conditions

Substitution Categories:

Direct Equivalent (Identical Electrical Specifications):

BSP52,115 (Nexperia): Matches all critical parameters with enhanced power rating (1.25 W) and automotive qualification

Voltage-Reduced Alternatives (Lower Vce(br) Rating):

BSP51,115 (Nexperia): 60 V breakdown voltage; suitable for applications not requiring 80 V rating
BSP50,115 (Nexperia): 45 V breakdown voltage; suitable for lower voltage applications

Enhanced Current Capability (Higher Ic Rating):

FZT603TA (Diodes Incorporated): 2 A collector current with 80 V breakdown voltage; higher power dissipation (2 W)
FZT692BTA (Diodes Incorporated): 2 A collector current with 70 V breakdown voltage; different transistor type (NPN, non-Darlington)

Parameter Comparison

Parameter	BSP52T3G	BSP52,115	BSP51,115	BSP50,115	FZT603TA	FZT692BTA
Manufacturer	onsemi	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Diodes Incorporated	Diodes Incorporated
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN
Ic (Max) [A]	1	1	1	1	2	2
Vce(br) (Max) [V]	80	80	60	45	80	70
Vce Saturation (Max) [V]	1.3 @ 500µA, 500mA	1.3 @ 500µA, 500mA	1.3 @ 500µA, 500mA	1.3 @ 500µA, 500mA	1.13 @ 20mA, 2A	0.5 @ 200mA, 2A
Ic Cutoff (Max)	10µA	50nA	50nA	50nA	10µA	100nA
hFE (Min) @ Ic, Vce	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V	5000 @ 500mA, 5V	150 @ 1A, 2V
Power - Max [W]	0.8	1.25	1.25	1.25	2	2
Frequency - Transition [MHz]	—	200	200	200	150	150
Operating Temperature [°C]	-65 to 150	150 (TJ)	150 (TJ)	150 (TJ)	-55 to 150	-55 to 150
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	SOT-223	SOT-223	SOT-223-3	SOT-223-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Grade / Qualification	—	Automotive / AEC-Q101	Automotive / AEC-Q101	Automotive / AEC-Q101	—	—

Engineering Selection Recommendations

BSP52,115 (Nexperia USA Inc.) is the primary direct equivalent for BSP52T3G. This part maintains identical electrical specifications for collector current (1 A), collector-emitter breakdown voltage (80 V), and DC current gain (2000 @ 500mA, 10V). The BSP52,115 offers enhanced power dissipation (1.25 W versus 0.8 W) and includes automotive-grade qualification (AEC-Q101), making it suitable for applications requiring higher reliability standards. Both parts are RoHS3 compliant with MSL 1 rating. The primary difference is packaging format: BSP52T3G is supplied in Tape & Reel (TR), while BSP52,115 is available in Cut Tape (CT) & Digi-Reel® format.

BSP51,115 (Nexperia USA Inc.) and BSP50,115 (Nexperia USA Inc.) are suitable alternatives when the application does not require the full 80 V breakdown voltage rating. BSP51,115 provides 60 V breakdown voltage with identical current and gain specifications. BSP50,115 provides 45 V breakdown voltage. Both include automotive qualification and enhanced power ratings (1.25 W). These parts are appropriate for cost optimization in voltage-constrained applications.

FZT603TA (Diodes Incorporated) is applicable when higher collector current capability (2 A) is required while maintaining 80 V breakdown voltage. This part provides doubled current capacity and power dissipation (2 W) with Darlington configuration. The transition frequency is 150 MHz. This part is suitable for applications requiring higher current handling within the same voltage class.

FZT692BTA (Diodes Incorporated) provides 2 A collector current with 70 V breakdown voltage. This part is a standard NPN transistor (not Darlington configuration) with significantly lower DC current gain (150 @ 1A, 2V) compared to the BSP52T3G (2000 @ 500mA, 10V). Selection of this part requires circuit redesign to accommodate the lower gain characteristics.

All substitute parts maintain RoHS3 compliance and MSL 1 rating. Selection should be based on specific application requirements for voltage rating, current capacity, and gain characteristics.

Frequently Asked Questions (FAQ)

Q: Can BSP52,115 be used as a direct replacement for BSP52T3G?

A: Yes. BSP52,115 is a direct electrical equivalent with identical collector current (1 A), collector-emitter breakdown voltage (80 V), and DC current gain (2000 @ 500mA, 10V). Both are NPN Darlington transistors in SOT-223 package. The primary difference is packaging format (Tape & Reel versus Cut Tape & Digi-Reel) and the addition of automotive qualification (AEC-Q101) on the BSP52,115.

Q: What is the difference between BSP51,115 and BSP52,115?

A: The primary difference is the collector-emitter breakdown voltage rating. BSP52,115 is rated for 80 V, while BSP51,115 is rated for 60 V. All other electrical parameters including collector current (1 A), DC current gain (2000 @ 500mA, 10V), and Vce saturation (1.3V @ 500µA, 500mA) are identical. BSP51,115 is suitable for applications where the lower voltage rating is acceptable.

Q: Can FZT603TA replace BSP52T3G in all applications?

A: FZT603TA can replace BSP52T3G in applications where higher collector current capability (2 A versus 1 A) is beneficial or required. Both parts maintain 80 V breakdown voltage and Darlington configuration. However, FZT603TA has different saturation characteristics (1.13V @ 20mA, 2A versus 1.3V @ 500µA, 500mA) and higher DC current gain (5000 @ 500mA, 5V). Circuit performance may differ due to these parameter variations.

Q: Why does FZT692BTA have lower DC current gain than BSP52T3G?

A: FZT692BTA is a standard NPN transistor, not a Darlington configuration. Darlington transistors (BSP52T3G, BSP52,115, BSP51,115, BSP50,115, FZT603TA) achieve higher current gain through internal transistor pair configuration. FZT692BTA's gain of 150 @ 1A, 2V reflects its single-transistor design. Applications using FZT692BTA require different base drive calculations.

Q: Are all substitute parts available in SOT-223 package?

A: All substitute parts are available in SOT-223 or SOT-223-3 package variants, which are mechanically and electrically compatible with the BSP52T3G TO-261-4 and TO-261AA package designations. Packaging format (Tape & Reel, Cut Tape, or Digi-Reel) varies by manufacturer and supplier.

Q: What is the significance of AEC-Q101 qualification on Nexperia parts?

A: AEC-Q101 is an automotive industry qualification standard. BSP52,115, BSP51,115, and BSP50,115 carry this qualification, indicating they meet automotive reliability and quality requirements. This qualification is relevant for applications in automotive or other high-reliability environments. BSP52T3G does not list this qualification.

Q: Can BSP50,115 be used in place of BSP52T3G?

A: BSP50,115 can be used only in applications where the collector-emitter breakdown voltage requirement is 45 V or lower. BSP50,115 is rated for 45 V maximum, while BSP52T3G is rated for 80 V. Using BSP50,115 in an 80 V application would result in device failure. All other electrical parameters (1 A collector current, 2000 hFE, 1.3V Vce saturation) are identical.

Q: What is the operating temperature range difference between BSP52T3G and substitute parts?

A: BSP52T3G specifies -65°C to 150°C operating temperature. Nexperia parts (BSP52,115, BSP51,115, BSP50,115) specify 150°C maximum junction temperature without lower limit documentation. Diodes Incorporated parts (FZT603TA, FZT692BTA) specify -55°C to 150°C. For applications requiring operation below -55°C, BSP52T3G is the only option among these parts.

Q: Are all parts RoHS3 compliant?

A: Yes. All listed substitute parts (BSP52,115, BSP51,115, BSP50,115, FZT603TA, FZT692BTA) are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity level, matching the BSP52T3G compliance status.

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