BSP 52 E6327 Equivalent & Substitute Parts

Part Overview

The BSP 52 E6327 is an NPN Darlington bipolar junction transistor manufactured by Infineon Technologies, designed for surface mount applications in the SOT-223 package. This component operates at a maximum collector current of 1 A with a collector-emitter breakdown voltage of 80 V and a maximum power dissipation of 1.5 W. The part is classified as obsolete, making equivalent and substitute components necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, gain characteristics, and thermal performance while accommodating modern active product availability.

Key Parameters

Parameter	BSP 52 E6327	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) Max	1	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1mA, 1A	V
DC Current Gain (hFE) Min @ Ic, Vce	2000 @ 500mA, 10V	—
Power - Max	1.5	W
Frequency - Transition	200	MHz
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
Supplier Device Package	PG-SOT223-4	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the BSP 52 E6327 are classified based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Parameters for Substitution:

Transistor Type: NPN - Darlington configuration
Maximum Collector Current (Ic): 1 A minimum
Collector-Emitter Breakdown Voltage: 80 V minimum
DC Current Gain (hFE): 2000 minimum @ 500mA, 10V
Package / Case: TO-261-4 or TO-261AA (SOT-223 footprint)
Mounting Type: Surface Mount

Substitution Groups:

Group 1: Direct Electrical Equivalents (80V, 1A, Darlington) Parts meeting all critical parameters with identical voltage and current ratings: BSP52,115 (Nexperia), BSP52T1G (onsemi), and BSP52T3G (onsemi).

Group 2: Higher Current Capability (80V, 2A, Darlington) Parts exceeding the 1 A current requirement while maintaining 80 V voltage rating: FZT603TA (Diodes Incorporated). These parts provide additional current margin for applications requiring higher transient or sustained collector current.

Group 3: Lower Voltage Rating (60V, 1A, Darlington) Part with reduced voltage rating but matching current and gain specifications: BSP51,115 (Nexperia). This substitute is applicable only in applications where the maximum operating voltage does not exceed 60 V.

Group 4: Non-Darlington Alternative (70V, 2A) Part with different transistor topology and reduced gain: FZT692BTA (Diodes Incorporated). This part is not a Darlington configuration and exhibits significantly lower DC current gain (150 vs. 2000), limiting its use to applications not dependent on high current gain characteristics.

Parameter Comparison

Parameter	BSP 52 E6327	BSP52,115	BSP52T1G	BSP52T3G	FZT603TA	BSP51,115	FZT692BTA	Unit
Manufacturer	Infineon	Nexperia	onsemi	onsemi	Diodes Inc.	Nexperia	Diodes Inc.	—
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN	—
Ic (Max)	1	1	1	1	2	1	2	A
Vce Breakdown (Max)	80	80	80	80	80	60	70	V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1mA, 1A	1.3V @ 500µA, 500mA	1.3V @ 500µA, 500mA	1.3V @ 500µA, 500mA	1.13V @ 20mA, 2A	1.3V @ 500µA, 500mA	500mV @ 200mA, 2A	V
DC Current Gain (hFE) Min @ Ic, Vce	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V	2000 @ 500mA, 10V	5000 @ 500mA, 5V	2000 @ 500mA, 10V	150 @ 1A, 2V	—
Power - Max	1.5	1.25	0.8	0.8	2	1.25	2	W
Frequency - Transition	200	200	—	—	150	200	150	MHz
Operating Temperature (TJ)	150	150	-65 to 150	-65 to 150	-55 to 150	150	-55 to 150	°C
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	—
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	—
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Automotive Grade	—	Yes (AEC-Q101)	—	—	—	Yes (AEC-Q101)	—	—

Engineering Selection Recommendations

Primary Substitutes (Direct Equivalents):

BSP52,115 (Nexperia) and BSP52T1G (onsemi) are the preferred direct substitutes for the BSP 52 E6327. Both parts maintain identical electrical specifications for collector current (1 A), collector-emitter breakdown voltage (80 V), and DC current gain (2000 @ 500mA, 10V). BSP52,115 carries AEC-Q101 automotive qualification and ROHS3 compliance, making it suitable for automotive and regulated applications. BSP52T1G offers extended operating temperature range (-65°C to 150°C) compared to the original part's 150°C maximum, providing improved thermal margin in temperature-variable environments. Both parts are in active production status with substantial inventory availability.

Secondary Substitute (Higher Current Capability):

FZT603TA (Diodes Incorporated) provides a 2 A collector current rating while maintaining the 80 V voltage specification and Darlington configuration. This part is applicable in applications where the original 1 A specification provides insufficient margin or where transient current demands exceed the nominal rating. The higher DC current gain (5000 vs. 2000) and improved saturation voltage (1.13V vs. 1.8V) offer enhanced switching performance. FZT603TA is ROHS3 compliant and active in production.

Conditional Substitute (Reduced Voltage Rating):

BSP51,115 (Nexperia) is applicable only in applications where the maximum operating voltage does not exceed 60 V. This part maintains identical current (1 A) and gain (2000) specifications with AEC-Q101 automotive qualification. Use this substitute only after confirming that circuit maximum voltage requirements do not exceed the 60 V rating.

Not Recommended:

FZT692BTA is not recommended as a substitute due to its non-Darlington topology and significantly reduced DC current gain (150 vs. 2000). While it provides 2 A current capability and 70 V voltage rating, the 13-fold reduction in current gain makes it unsuitable for applications designed around the high-gain Darlington characteristics of the original part.

Frequently Asked Questions (FAQ)

Q: Can BSP52,115 be used as a direct replacement for BSP 52 E6327?

A: Yes. BSP52,115 maintains identical electrical specifications for collector current (1 A), collector-emitter breakdown voltage (80 V), and DC current gain (2000 @ 500mA, 10V). Both parts use the same SOT-223 package footprint. BSP52,115 is in active production status, addressing the obsolescence of the original part.

Q: What is the difference between BSP52T1G and BSP52T3G?

A: Both parts are manufactured by onsemi and provide identical electrical specifications. The primary difference is packaging: BSP52T1G is supplied in Cut Tape (CT) & Digi-Reel format, while BSP52T3G is supplied in Tape & Reel (TR) format. Electrical performance and SOT-223 package compatibility are identical. Selection depends on procurement and assembly requirements.

Q: Can FZT603TA replace BSP 52 E6327 in all applications?

A: FZT603TA is electrically compatible for applications operating at or below 1 A collector current. The 2 A maximum rating provides additional current margin. However, the reduced transition frequency (150 MHz vs. 200 MHz) may affect performance in high-frequency switching applications. Verify that the application does not require the 200 MHz transition frequency specification before substituting.

Q: Why is BSP51,115 listed as a substitute if it has a lower voltage rating?

A: BSP51,115 is listed as a manufacturer-recommended substitute for applications where the maximum operating voltage does not exceed 60 V. It maintains identical current and gain specifications. This part is applicable only in circuits designed to operate within the 60 V maximum rating. Do not use this substitute in applications requiring the full 80 V capability.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All active substitute parts listed (BSP52,115, BSP52T1G, BSP52T3G, FZT603TA, BSP51,115, and FZT692BTA) are ROHS3 compliant. The original BSP 52 E6327 RoHS status is not specified in the provided data.

Q: Which substitute offers the best thermal performance?

A: FZT603TA provides the highest power dissipation rating (2 W vs. 1.5 W original, 1.25 W or 0.8 W for other substitutes) and the lowest saturation voltage (1.13V @ 20mA, 2A), resulting in reduced power loss during saturation. This part is preferred for applications with stringent thermal requirements.

Q: Can I use FZT692BTA as a substitute?

A: FZT692BTA is not recommended. While it provides 2 A current and 70 V voltage rating, it is not a Darlington configuration and exhibits a DC current gain of only 150 compared to the original part's 2000. This 13-fold reduction in gain makes it unsuitable for applications designed around high-gain Darlington characteristics. Use only if the application circuit has been redesigned to accommodate the lower gain specification.

Q: What is the inventory status of substitute parts?

A: BSP52T1G (onsemi) has the highest inventory availability at 64,200 pieces. FZT603TA (Diodes Incorporated) has 23,400 pieces available. BSP52T3G (onsemi) has 10,005 pieces. BSP52,115 (Nexperia) has 3,100 pieces. BSP51,115 (Nexperia) has 2,100 pieces. FZT692BTA (Diodes Incorporated) has 17,373 pieces. Verify current inventory status with your supplier before finalizing procurement decisions.

Q: Are automotive-grade versions available?

A: Yes. BSP52,115 and BSP51,115 (both Nexperia) carry AEC-Q101 automotive qualification. These parts are suitable for automotive applications requiring qualified components. Other substitutes do not carry automotive qualification designations in the provided data.

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