BSP372 E6327 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The BSP372 E6327 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 1.7A continuous drain current at 25°C. The device is housed in a PG-SOT223-4 surface mount package and is part of the SIPMOS® series. This part is classified as obsolete, making identification of functionally equivalent alternatives essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the SOT-223 package family.

Key Parameters

Parameter	BSP372 E6327	Unit
FET Type	N-Channel	-
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	1.7	A
On-State Resistance (Rds On) @ Id, Vgs	310 mOhm @ 1.7A, 5V	-
Gate-Source Threshold Voltage (Vgs(th)) @ Id	2	V @ 1mA
Gate-Source Voltage (Vgs) Max	±14	V
Input Capacitance (Ciss) @ Vds	520	pF @ 25V
Power Dissipation (Max)	1.8	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	PG-SOT223-4	-
Mounting Type	Surface Mount	-
Product Status	Obsolete	-
RoHS Status	Non-compliant	-

Substitute Part Grouping Explanation

Substitution of the BSP372 E6327 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must support minimum 1.7A at 25°C
Package Type: Must be SOT-223-4 or equivalent TO-261-4/TO-261AA footprint
FET Type: N-Channel topology required
Operating Temperature Range: Must span -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; values within 310-385 mOhm range are acceptable
Gate-Source Threshold Voltage (Vgs(th)): Must not exceed 2.7V @ specified test current
Gate-Source Voltage (Vgs) Max: Must accommodate ±14V minimum
Input Capacitance (Ciss): Values between 185-520 pF are compatible

The three substitute parts listed below satisfy all primary criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter	BSP372 E6327 (Infineon)	AOH3106 (Alpha & Omega)	FQT7N10LTF (onsemi)	PMT280ENEAX (Nexperia)	Unit
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	-
Vdss	100	100	100	100	V
Id @ 25°C	1.7	2.0	1.7	1.5	A
Rds On (Max)	310 @ 1.7A, 5V	360 @ 2A, 10V	350 @ 850mA, 10V	385 @ 1.5A, 10V	mOhm
Vgs(th) (Max) @ Id	2 @ 1mA	2 @ 250µA	2 @ 250µA	2.7 @ 250µA	V
Vgs (Max)	±14	±20	±20	±20	V
Ciss (Max) @ Vds	520 @ 25V	185 @ 50V	290 @ 25V	195 @ 50V	pF
Power Dissipation (Max)	1.8	3.1	2.0	0.77	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C (TJ)
Package	PG-SOT223-4	SOT-223-4	SOT-223-4	SOT-223	-
Product Status	Obsolete	Active	Active	Active	-
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	-

Engineering Selection Recommendations

AOH3106 (Alpha & Omega Semiconductor Inc.)

The AOH3106 is an active product with ROHS3 compliance. It exceeds the BSP372 E6327 specifications in continuous drain current (2A vs. 1.7A) and power dissipation capability (3.1W vs. 1.8W). The device maintains 100V Vdss rating and operates across the required temperature range. Gate-source voltage rating is improved to ±20V. This substitute is suitable for applications where higher current capacity and thermal headroom are beneficial. Inventory availability is substantial at 27,800 pieces.

FQT7N10LTF (onsemi QFET® Series)

The FQT7N10LTF is an active product with ROHS3 compliance and is part of the QFET® series. It matches the BSP372 E6327 drain current specification at 1.7A and maintains 100V Vdss. Power dissipation is rated at 2W, providing modest thermal margin. Gate charge is specified at 6 nC @ 5V, indicating efficient switching characteristics. The device is available in high volume (45,400 pieces) in Cut Tape and Digi-Reel® packaging. This substitute provides direct electrical equivalence with modern compliance status.

PMT280ENEAX (Nexperia USA Inc.)

The PMT280ENEAX is an active product with ROHS3 compliance and carries AEC-Q100 automotive qualification. It is rated for 1.5A continuous drain current, which is slightly below the BSP372 E6327 specification of 1.7A. However, the device maintains 100V Vdss and operates across the required temperature range. Power dissipation is limited to 770mW, making this substitute suitable for lower-power applications. Automotive qualification provides additional reliability assurance for mission-critical designs. Inventory is available at 2,200 pieces.

Selection Basis:

All three substitutes maintain N-Channel topology, 100V Vdss, and SOT-223 package compatibility
All three are active products with current manufacturing support
All three comply with ROHS3 environmental standards, addressing the obsolete part's non-compliance status
Selection between substitutes depends on application current requirements and thermal budget
AOH3106 and FQT7N10LTF provide current capacity equal to or exceeding the original specification
PMT280ENEAX is appropriate for applications with lower current demands and automotive qualification requirements

Frequently Asked Questions (FAQ)

Q: Can the AOH3106 be used as a direct replacement for the BSP372 E6327?

A: Yes. The AOH3106 meets all primary substitution criteria: 100V Vdss, 2A continuous drain current (exceeding the 1.7A requirement), SOT-223-4 package compatibility, N-Channel topology, and -55°C to 150°C operating range. The higher current rating and power dissipation provide additional design margin.

Q: What is the key difference between the FQT7N10LTF and the AOH3106?

A: Both devices maintain 100V Vdss and support the required current levels. The FQT7N10LTF matches the original 1.7A specification exactly, while the AOH3106 provides 2A capacity. The FQT7N10LTF is available in higher volume (45,400 vs. 27,800 pieces) and features lower input capacitance (290 pF vs. 185 pF), which may affect switching speed in specific circuit topologies.

Q: Is the PMT280ENEAX suitable for all applications using the BSP372 E6327?

A: The PMT280ENEAX is suitable for applications where continuous drain current does not exceed 1.5A. For designs requiring the full 1.7A specification of the original part, the AOH3106 or FQT7N10LTF are preferred. The PMT280ENEAX is specifically advantageous for automotive applications due to AEC-Q100 qualification.

Q: Are all substitute parts RoHS compliant?

A: Yes. All three substitute parts (AOH3106, FQT7N10LTF, and PMT280ENEAX) are ROHS3 compliant. The original BSP372 E6327 is RoHS non-compliant, making substitution necessary for designs subject to environmental regulations.

Q: Do the substitute parts require PCB layout modifications?

A: No. All substitute parts use SOT-223-4 or SOT-223 packages, which are mechanically compatible with the original PG-SOT223-4 footprint (TO-261-4/TO-261AA). No PCB redesign is required for package accommodation.

Q: What is the gate charge difference between these devices?

A: The FQT7N10LTF specifies 6 nC @ 5V gate charge, while the PMT280ENEAX specifies 6.8 nC @ 10V. Lower gate charge generally indicates faster switching response. The original BSP372 E6327 does not specify gate charge in the provided data. Gate charge differences may affect switching frequency performance in high-speed applications.

Q: Can these substitutes be used interchangeably in the same circuit?

A: Yes, with current rating verification. All three devices maintain identical voltage specifications (100V Vdss) and temperature range (-55°C to 150°C). Current capacity varies: AOH3106 (2A), FQT7N10LTF (1.7A), and PMT280ENEAX (1.5A). Select the substitute that meets or exceeds your application's continuous drain current requirement.

Q: Which substitute offers the best thermal performance?

A: The AOH3106 provides the highest power dissipation rating at 3.1W, offering the greatest thermal headroom. The FQT7N10LTF is rated at 2W, and the PMT280ENEAX at 770mW. Thermal performance depends on both device rating and PCB thermal design; higher power dissipation ratings allow operation at higher currents or ambient temperatures.

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