BSP320SL6433HTMA1 Equivalent & Substitute Parts

Part Overview

The BSP320SL6433HTMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 2.9A continuous drain current at 25°C. The device is packaged in PG-SOT223-4 (TO-261-4, TO-261AA) surface mount configuration and is part of the SIPMOS® series. This part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The BSP320SL6433HTMA1 operates across a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 1.8W at ambient temperature. The device features a maximum on-resistance (Rds On) of 120mOhm at 2.9A and 10V gate-source voltage, with a gate charge of 12nC at 10V.

Substiute Parts

BSP320SL6433HTMA1
Infineon TechnologiesIn Stock: 986BSP320SL6433HTMA1 Datasheet
BSP320SL6433HTMA1
Current Part
IRFL014NTRPBF
Infineon TechnologiesIn Stock: 35161IRFL014NTRPBF Datasheet
IRFL014NTRPBF
MFR Recommended
IRLL014TRPBF
Vishay SiliconixIn Stock: 15548IRLL014TRPBF Datasheet
IRLL014TRPBF
MFR Recommended
NCV8440ASTT1G
onsemiIn Stock: 16165NCV8440ASTT1G Datasheet
NCV8440ASTT1G
MFR Recommended
NVF3055L108T1G
onsemiIn Stock: 3111NVF3055L108T1G Datasheet
NVF3055L108T1G
MFR Recommended
STN3NF06L
STMicroelectronicsIn Stock: 72493STN3NF06L Datasheet
STN3NF06L
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 2.9 A (Ta)
On-Resistance (Rds On) @ Id, Vgs 120 mOhm @ 2.9A, 10V
Gate-Source Voltage (Vgs) Max ±20 V
Gate Charge (Qg) @ Vgs 12 nC @ 10V
Input Capacitance (Ciss) @ Vds 340 pF @ 25V
Power Dissipation (Max) 1.8 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type PG-SOT223-4 TO-261-4, TO-261AA
Moisture Sensitivity Level (MSL) 1 Unlimited

Substitute Part Grouping Explanation

Substitution of the BSP320SL6433HTMA1 is determined by strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The following parameters establish substitution validity:

Critical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 55V minimum to 60V nominal
  • Continuous Drain Current (Id): 1.9A minimum (acceptable reduction from 2.9A)
  • Package Type: SOT-223 (TO-261-4, TO-261AA) surface mount only
  • FET Type: N-Channel MOSFET technology
  • Operating Temperature Range: -55°C minimum to 150°C minimum
  • Moisture Sensitivity Level: MSL 1 (Unlimited)

Secondary Compatibility Parameters:

  • On-Resistance (Rds On): 100mOhm to 200mOhm range at specified conditions
  • Gate-Source Voltage (Vgs): ±10V to ±20V range
  • Gate Charge (Qg): 4.5nC to 15nC range
  • Input Capacitance (Ciss): 155pF to 440pF range

All identified substitute parts meet the critical matching parameters and operate within acceptable ranges for secondary parameters. Substitutes are available in active product status with RoHS3 compliance and REACH unaffected designation.

Parameter Comparison

Parameter BSP320SL6433HTMA1 IRFL014NTRPBF IRLL014TRPBF NCV8440ASTT1G NVF3055L108T1G STN3NF06L
Manufacturer Infineon Infineon Vishay Siliconix onsemi onsemi STMicroelectronics
Vdss (V) 60 55 60 59 60 60
Id @ 25°C (A) 2.9 (Ta) 1.9 (Ta) 2.7 (Tc) 2.6 (Ta) 3.0 (Ta) 4.0 (Tc)
Rds On (mOhm) 120 @ 2.9A, 10V 160 @ 1.9A, 10V 200 @ 1.6A, 5V 110 @ 2.6A, 10V 120 @ 1.5A, 5V 100 @ 1.5A, 10V
Vgs(th) (V) 4 @ 20µA 4 @ 250µA 2 @ 250µA 1.9 @ 100µA 2 @ 250µA 2.8 @ 250µA
Qg (nC) 12 @ 10V 11 @ 10V 8.4 @ 5V 4.5 @ 4.5V 15 @ 5V 9 @ 5V
Ciss (pF) 340 @ 25V 190 @ 25V 400 @ 25V 155 @ 35V 440 @ 25V 340 @ 25V
Power Dissipation (W) 1.8 (Ta) 1.0 (Ta) 2.0 (Ta), 3.1 (Tc) 1.69 (Ta) 1.3 (Ta) 3.3 (Tc)
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 175 -55 to 150
Package PG-SOT223-4 SOT-223 SOT-223 SOT-223 (TO-261) SOT-223 (TO-261) SOT-223
Product Status Obsolete Active Active Active Active Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: NCV8440ASTT1G (onsemi)

The NCV8440ASTT1G provides the closest electrical match to the BSP320SL6433HTMA1 with 59V Vdss, 2.6A continuous drain current, and 110mOhm on-resistance at 10V gate-source voltage. This part maintains active product status with RoHS3 compliance and REACH unaffected designation. The device operates across the full -55°C to 150°C temperature range and is available in high inventory (16,092 pcs). The lower gate charge (4.5nC) and reduced input capacitance (155pF) provide improved switching performance characteristics.

Secondary Substitute: STN3NF06L (STMicroelectronics)

The STN3NF06L offers superior current handling capability at 4A continuous drain current with 100mOhm on-resistance at 10V. This part is part of the STripFET™ II series and provides the highest inventory availability (72,446 pcs). The device maintains active status with RoHS3 compliance and operates across -55°C to 150°C. The STN3NF06L is suitable for applications requiring higher current capacity than the original part.

Tertiary Substitute: NVF3055L108T1G (onsemi)

The NVF3055L108T1G matches the original 60V Vdss and 3A continuous drain current specifications with 120mOhm on-resistance. This part carries automotive qualification (AEC-Q101) and extends the operating temperature range to 175°C. The device is available in active status with RoHS3 compliance. Inventory availability is lower (3,100 pcs) compared to other substitutes.

Alternative Substitute: IRLL014TRPBF (Vishay Siliconix)

The IRLL014TRPBF maintains 60V Vdss with 2.7A continuous drain current and 200mOhm on-resistance at 5V gate-source voltage. This part is available in active status with RoHS3 compliance and high inventory (15,465 pcs). The device operates across -55°C to 150°C with enhanced power dissipation capability (2W at Ta, 3.1W at Tc).

Not Recommended: IRFL014NTRPBF (Infineon)

The IRFL014NTRPBF operates at reduced 55V Vdss and 1.9A continuous drain current, representing a significant downgrade from the original 60V/2.9A specifications. While this part maintains active status and RoHS3 compliance, the reduced voltage and current ratings make it unsuitable for direct substitution in applications requiring full original specifications.

Frequently Asked Questions (FAQ)

Q: Can the IRFL014NTRPBF be used as a direct substitute for the BSP320SL6433HTMA1?

A: No. The IRFL014NTRPBF operates at 55V Vdss and 1.9A continuous drain current, both below the original part's 60V and 2.9A ratings. This part is suitable only for applications with reduced voltage and current requirements.

Q: What is the primary reason for substituting the BSP320SL6433HTMA1?

A: The BSP320SL6433HTMA1 is classified as obsolete. Active substitute parts ensure long-term design support, procurement availability, and compliance with current manufacturing standards (RoHS3).

Q: Are all substitute parts compatible with the original SOT-223 package footprint?

A: Yes. All substitute parts are packaged in SOT-223 (TO-261-4, TO-261AA) surface mount configuration, ensuring mechanical and electrical compatibility with existing PCB layouts.

Q: Which substitute part offers the best current handling capability?

A: The STN3NF06L provides the highest continuous drain current at 4A (Tc), making it suitable for applications requiring higher current capacity than the original 2.9A specification.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All identified substitute parts carry RoHS3 compliance certification and REACH unaffected designation, meeting current environmental and regulatory requirements.

Q: What is the difference between Ta and Tc temperature specifications?

A: Ta refers to ambient temperature measurement, while Tc refers to case temperature measurement. Specifications measured at Tc typically allow higher power dissipation values due to improved thermal coupling.

Q: Which substitute part has the lowest on-resistance?

A: The STN3NF06L features 100mOhm on-resistance at 1.5A and 10V gate-source voltage, providing the lowest on-resistance among all substitutes.

Q: Can the NVF3055L108T1G be used in automotive applications?

A: Yes. The NVF3055L108T1G carries AEC-Q101 automotive qualification and extends the operating temperature range to 175°C, making it suitable for automotive-grade applications.

Q: What is the gate charge significance in MOSFET substitution?

A: Gate charge (Qg) determines the switching speed and gate drive requirements. Lower gate charge values (such as NCV8440ASTT1G at 4.5nC) enable faster switching with reduced gate drive power consumption.

Q: Are there inventory differences between substitute parts?

A: Yes. STN3NF06L has the highest inventory (72,446 pcs), while NVF3055L108T1G has the lowest (3,100 pcs). IRFL014NTRPBF and NCV8440ASTT1G maintain moderate inventory levels (35,100 and 16,092 pcs respectively).

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