BSP295L6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BSP295L6327HTSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 1.8A continuous drain current at 25°C. This device is packaged in PG-SOT223-4-21 surface mount configuration and belongs to the SIPMOS® series. The part is currently classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	1.8	A
On-State Resistance (Rds On) @ 1.8A, 10V	300	mOhm
Gate Threshold Voltage (Vgs(th)) @ 400µA	1.8	V
Gate Charge (Qg) @ 10V	17	nC
Input Capacitance (Ciss) @ 25V	368	pF
Power Dissipation (Max)	1.8	W
Operating Temperature Range	-55 to 150	°C
Package Type	PG-SOT223-4-21	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the BSP295L6327HTSA1 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 60V to ensure compatibility with the original circuit voltage specifications.

Current Rating: Substitute parts must support a minimum continuous drain current of 1.8A at 25°C. Parts with higher current ratings remain compatible as they operate within the same voltage and thermal envelope.

On-State Resistance: The Rds On value directly impacts power dissipation and circuit efficiency. Substitute parts with lower Rds On values provide improved performance characteristics while maintaining functional compatibility.

Package Compatibility: All substitute parts utilize surface mount SOT-223 or equivalent package configurations (TO-261-4, TO-261AA), ensuring mechanical and electrical compatibility with existing PCB layouts.

Operating Temperature Range: All substitute parts maintain the -55°C to 150°C operating range, ensuring thermal compatibility across application environments.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Variations within the specified ranges do not preclude substitution.

Parameter Comparison

Parameter	BSP295L6327HTSA1	BSP295H6327XTSA1	IRLL014TRPBF	IRLL014NTRPBF	DMN6068SE-13
Manufacturer	Infineon	Infineon	Vishay Siliconix	Infineon	Diodes Incorporated
Vdss (V)	60	60	60	55	60
Id @ 25°C (A)	1.8	1.8	2.7	2	4.1
Rds On @ 10V (mOhm)	300	300	200	140	68
Vgs(th) (V)	1.8	1.8	2	2	3
Qg @ 10V (nC)	17	17	8.4	14	10.3
Ciss @ 25V (pF)	368	368	400	230	502
Power Dissipation (W)	1.8	1.8	2	1	2
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	PG-SOT223-4-21	PG-SOT223-4	SOT-223	SOT-223	SOT-223-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Primary Recommendation): The BSP295H6327XTSA1 provides direct parametric equivalence to the BSP295L6327HTSA1, maintaining identical electrical specifications including 60V Vdss, 1.8A continuous drain current, and 300mOhm Rds On. This part is manufactured by Infineon Technologies within the same SIPMOS® series and carries Active product status with ROHS3 compliance, making it the preferred direct replacement for obsolete inventory management.

Performance-Enhanced Alternatives: The IRLL014TRPBF (Vishay Siliconix) and DMN6068SE-13 (Diodes Incorporated) offer improved on-state resistance characteristics (200mOhm and 68mOhm respectively) while maintaining 60V voltage rating and surface mount SOT-223 packaging. These parts support higher continuous drain currents and reduced power dissipation, providing performance benefits in applications where thermal management is critical. Both parts carry Active status and ROHS3 compliance.

Lower Voltage Alternative: The IRLL014NTRPBF (Infineon Technologies) operates at 55V Vdss with 2A continuous drain current and 140mOhm Rds On. This part is suitable for applications where the circuit voltage does not exceed 55V, offering improved on-state resistance and reduced gate charge. Active product status and ROHS3 compliance are confirmed.

All substitute parts maintain surface mount configuration compatibility and the -55°C to 150°C operating temperature range. Selection should be based on specific circuit voltage requirements, thermal dissipation constraints, and gate drive capabilities.

Frequently Asked Questions (FAQ)

Q: Can the BSP295H6327XTSA1 directly replace the obsolete BSP295L6327HTSA1?

A: Yes. The BSP295H6327XTSA1 is a parametric equivalent with identical electrical specifications: 60V Vdss, 1.8A continuous drain current, 300mOhm Rds On, and equivalent gate charge characteristics. Both parts use the same SIPMOS® series technology and surface mount SOT-223-4 packaging. The primary difference is product status: BSP295H6327XTSA1 is Active with ROHS3 compliance.

Q: What is the difference between the IRLL014TRPBF and IRLL014NTRPBF?

A: The IRLL014TRPBF is rated for 60V Vdss with 2.7A continuous drain current and 200mOhm Rds On. The IRLL014NTRPBF is rated for 55V Vdss with 2A continuous drain current and 140mOhm Rds On. Both are manufactured by Infineon Technologies and use SOT-223 packaging. The IRLL014TRPBF maintains full 60V compatibility with the original part, while the IRLL014NTRPBF is suitable only for circuits operating at 55V or below.

Q: Can I use the DMN6068SE-13 in place of the BSP295L6327HTSA1?

A: Yes, with consideration of thermal characteristics. The DMN6068SE-13 (Diodes Incorporated) maintains 60V Vdss compatibility and uses SOT-223-3 surface mount packaging. It provides significantly lower on-state resistance (68mOhm versus 300mOhm), resulting in reduced power dissipation and improved efficiency. The higher current rating (4.1A) and lower gate charge (10.3nC) make it suitable for applications requiring enhanced performance. Verify gate drive circuit compatibility with the 3V gate threshold voltage.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. The BSP295H6327XTSA1, IRLL014TRPBF, IRLL014NTRPBF, and DMN6068SE-13 all carry ROHS3 compliance certification. All parts are REACH Unaffected and classified under ECCN EAR99.

Q: Do the substitute parts fit the same PCB footprint?

A: All substitute parts use surface mount SOT-223 or equivalent packaging (TO-261-4, TO-261AA). The PG-SOT223-4-21 footprint of the original part is compatible with standard SOT-223 land patterns. Verify specific footprint dimensions with component datasheets if PCB layout modifications are required.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge (Qg) affects the speed and energy required to switch the MOSFET. The original part specifies 17nC at 10V. Substitute parts range from 8.4nC to 14nC. Lower gate charge values reduce switching losses and allow faster switching speeds, benefiting high-frequency applications. Ensure gate drive circuitry can supply adequate current for the selected part's gate charge specification.

Q: Which substitute part offers the best thermal performance?

A: The DMN6068SE-13 provides the lowest on-state resistance (68mOhm) and highest power dissipation rating (2W), resulting in the lowest junction temperature rise under equivalent load conditions. The IRLL014NTRPBF offers the second-best thermal performance with 140mOhm Rds On and 1W power dissipation rating.

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