BSP250,115 P-Channel MOSFET 30V 3A SOT-223 Equivalent & Substitute Parts

Part Overview

The BSP250,115 is a P-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Nexperia USA Inc., rated for 30V drain-to-source voltage and 3A continuous drain current in a surface mount SOT-223 package. This device is classified as "Not For New Designs," indicating it is a legacy component. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	3	A
On-Resistance (Rds On) @ 1A, 10V	250	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	2.8	V
Gate Charge (Qg) @ 10V	25	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 20V	250	pF
Power Dissipation (Max)	1.65	W
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	—
Package	SOT-223 (TO-261-4, TO-261AA)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BSP250,115 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel topology
Drain-to-Source Voltage (Vdss): Minimum 30V rating
Continuous Drain Current (Id): Minimum 3A at 25°C
Package Type: SOT-223 surface mount form factor
Gate Voltage Range (Vgs): ±20V compatibility
RoHS3 Compliance and MSL Level 1

Secondary Compatibility Factors:

On-Resistance (Rds On): Lower values indicate improved performance but do not prevent substitution
Gate Charge (Qg): Affects switching speed; variations are acceptable within application requirements
Power Dissipation: Devices rated at or above 1.65W are compatible
Operating Temperature Range: Minimum 150°C junction temperature required

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications from the same manufacturer) and Similar Devices (alternative manufacturers with comparable or enhanced electrical performance in the same package family).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Package	Product Status
BSP250,115	Nexperia USA Inc.	30	3	250 @ 1A, 10V	2.8 @ 1mA	25 @ 10V	1.65	SOT-223	Not For New Designs
BSP250,135	Nexperia USA Inc.	30	3	250 @ 1A, 10V	2.8 @ 1mA	25 @ 10V	1.65	SOT-223	Not For New Designs
FDT458P	onsemi	30	3.4	130 @ 3.4A, 10V	3 @ 250µA	3.5 @ 10V	3	SOT-223-4	Active
NDT452AP	onsemi	30	5	65 @ 5A, 10V	2.8 @ 250µA	30 @ 10V	3	SOT-223-4	Active
NDT456P	onsemi	30	7.5	30 @ 7.5A, 10V	3 @ 250µA	67 @ 10V	3	SOT-223-4	Active
NTF5P03T3G	onsemi	30	3.7	100 @ 5.2A, 10V	3 @ 250µA	38 @ 10V	1.56	SOT-223	Active
ZXMP3A16GTA	Diodes Incorporated	30	5.4	45 @ 4.2A, 10V	1 @ 250µA	29.6 @ 10V	2	SOT-223-3	Active
ZXMP4A16GTA	Diodes Incorporated	40	6.4	60 @ 3.8A, 10V	1 @ 250µA	26.1 @ 10V	2	SOT-223-3	Active

Engineering Selection Recommendations

Parametric Equivalent: The BSP250,135 from Nexperia USA Inc. is a direct parametric equivalent to the BSP250,115, offering identical electrical specifications and the same legacy product status. This part is suitable for direct replacement in existing designs and maintains full compatibility with the original design intent.

Active Substitute Selection: For applications requiring active product status and continued manufacturer support, the following devices are suitable substitutes based on compliance and electrical compatibility:

onsemi Devices:

FDT458P: Meets minimum current requirement (3.4A) with improved on-resistance (130 mOhm) and active product status. Suitable for applications prioritizing lower power dissipation.
NTF5P03T3G: Exceeds minimum current requirement (3.7A) with moderate on-resistance (100 mOhm) and active status. Maintains power dissipation near original specification (1.56W).
NDT452AP: Exceeds current rating (5A) with significantly lower on-resistance (65 mOhm). Suitable for high-current applications requiring improved thermal performance.
NDT456P: Highest current rating (7.5A) with lowest on-resistance (30 mOhm). Recommended for applications requiring maximum current capacity and thermal margin.

Diodes Incorporated Devices:

ZXMP3A16GTA: Rated for 5.4A with low on-resistance (45 mOhm) and active status. Maintains 30V Vdss rating.
ZXMP4A16GTA: Rated for 6.4A with 40V Vdss rating and low on-resistance (60 mOhm). Suitable for applications requiring higher voltage margin or increased current capacity.

All substitute devices are ROHS3 compliant with MSL Level 1 rating, matching the original part's environmental and regulatory compliance profile.

Frequently Asked Questions (FAQ)

Q: Can BSP250,135 be used as a direct replacement for BSP250,115? A: Yes. The BSP250,135 is a parametric equivalent with identical electrical specifications, package type, and compliance certifications. Direct substitution is supported without design modification.

Q: What is the primary difference between the Nexperia and onsemi substitute options? A: Nexperia devices (BSP250,115 and BSP250,135) are legacy parts with "Not For New Designs" status. onsemi and Diodes Incorporated alternatives are active products with ongoing manufacturer support, improved on-resistance characteristics, and higher current ratings in most cases.

Q: Are all substitute parts compatible with the SOT-223 package footprint? A: All listed substitutes use SOT-223 or SOT-223-3/SOT-223-4 variants, which share the same TO-261-4 and TO-261AA package designations. Footprint compatibility is maintained across all options.

Q: Which substitute offers the best thermal performance? A: NDT456P provides the lowest on-resistance (30 mOhm @ 7.5A, 10V) and highest power dissipation rating (3W), resulting in superior thermal performance and reduced junction temperature rise under load.

Q: Can ZXMP4A16GTA be used in place of BSP250,115 despite the 40V Vdss rating? A: Yes. The 40V Vdss rating of ZXMP4A16GTA exceeds the 30V requirement of BSP250,115, providing additional voltage margin. This device is suitable for applications operating at or below 30V.

Q: What is the significance of gate charge (Qg) differences among substitutes? A: Gate charge affects switching speed and driver circuit requirements. Lower Qg values (such as FDT458P at 3.5 nC) enable faster switching, while higher values (such as NDT456P at 67 nC) require longer switching times. Selection depends on application switching frequency and driver capability.

Q: Are all substitute parts RoHS3 compliant? A: Yes. All listed substitute parts are ROHS3 compliant with MSL Level 1 rating, matching the environmental and regulatory compliance of the original BSP250,115.

Q: Which substitute is recommended for cost-sensitive applications? A: BSP250,135 offers identical performance at potentially lower cost due to higher inventory availability (116,207 pcs vs. 25,086 pcs for BSP250,115). For active product alternatives, FDT458P and NTF5P03T3G offer competitive pricing with improved specifications.

Q: Can substitutes with higher current ratings (5A, 7.5A) be used in 3A applications? A: Yes. Devices rated for higher current are fully compatible with lower current applications. The higher rating provides additional thermal margin and design flexibility without affecting circuit operation.

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