BSP170PE6327 P-Channel MOSFET 60V 1.9A Equivalent & Substitute Parts

Part Overview

The BSP170PE6327 is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 1.9A continuous drain current at 25°C. The device is packaged in PG-SOT223-4 (TO-261-4, TO-261AA) surface mount configuration and is designed for general-purpose switching applications requiring low on-resistance performance.

The BSP170PE6327 carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	1.9	A
On-Resistance (Rds On) @ Id, Vgs	300 mOhm @ 1.9A, 10V	—
Gate-Source Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	14	nC @ 10V
Maximum Gate-Source Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	410	pF @ 25V
Power Dissipation (Max)	1.8	W
Operating Temperature Range	-55 to +150	°C (TJ)
Mounting Type	Surface Mount	—
Package	PG-SOT223-4 (TO-261-4, TO-261AA)	—

Substitute Part Grouping Explanation

Substitution of the BSP170PE6327 is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
FET Type: Must be P-Channel
Technology: Must be MOSFET (Metal Oxide Semiconductor)
Operating Temperature Range: Must support -55°C to +150°C
Mounting Type: Must be Surface Mount
Package Compatibility: Must be compatible with PG-SOT223-4 or equivalent SOT-223 footprints

Secondary Performance Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 1.9A @ 25°C
On-Resistance (Rds On): Substitute must not exceed 300 mOhm @ specified conditions
Gate Charge (Qg): Lower values indicate faster switching; higher values acceptable if other parameters are met
Input Capacitance (Ciss): Affects gate drive requirements; variations acceptable within application tolerance
Power Dissipation: Substitute must support thermal requirements of the application

Identified substitutes meet these criteria through parametric equivalence. All substitute parts maintain P-Channel topology, 60V Vdss rating, surface mount configuration, and compatible thermal operating ranges.

Parameter Comparison

Parameter	BSP170PE6327 (Main)	BSP170PH6327XTSA1	NDT2955	ZXMP6A13GTA
Manufacturer	Infineon Technologies	Infineon Technologies	onsemi	Diodes Incorporated
FET Type	P-Channel	P-Channel	P-Channel	P-Channel
Vdss	60 V	60 V	60 V	60 V
Id @ 25°C	1.9 A	1.9 A	2.5 A	1.7 A
Rds On (Max)	300 mOhm @ 1.9A, 10V	300 mOhm @ 1.9A, 10V	300 mOhm @ 2.5A, 10V	390 mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	4 V @ 250µA	4 V @ 250µA	1 V @ 250µA
Qg (Max) @ Vgs	14 nC @ 10V	14 nC @ 10V	15 nC @ 10V	5.9 nC @ 10V
Vgs (Max)	±20 V	±20 V	±20 V	±20 V
Ciss (Max) @ Vds	410 pF @ 25V	410 pF @ 25V	601 pF @ 30V	219 pF @ 30V
Power Dissipation (Max)	1.8 W	1.8 W	3 W	2 W
Operating Temperature	-55 to +150°C	-55 to +150°C	-55 to +150°C	-55 to +150°C
Package	PG-SOT223-4	PG-SOT223-4	SOT-223-4	SOT-223-3
Product Status	Obsolete	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

BSP170PH6327XTSA1 (Infineon Technologies)

This part is the direct parametric equivalent to the BSP170PE6327. It maintains identical electrical specifications including 60V Vdss, 1.9A continuous drain current, 300 mOhm on-resistance, and 14 nC gate charge. The primary distinction is product status: BSP170PH6327XTSA1 is Active, whereas the main part is Obsolete. This substitute is manufactured by the same supplier (Infineon Technologies) and carries ROHS3 compliance, addressing regulatory requirements. Packaging is PG-SOT223-4, ensuring direct footprint compatibility. Inventory availability is significantly higher (16,978 pcs vs. 749 pcs), supporting production continuity.

NDT2955 (onsemi)

This part provides parametric substitution with enhanced current capability. It maintains 60V Vdss and 300 mOhm on-resistance specifications but offers 2.5A continuous drain current (versus 1.9A) and 3W power dissipation (versus 1.8W). These higher ratings provide design margin for applications operating near the original part's current limits. Gate charge is marginally higher (15 nC vs. 14 nC), and input capacitance is increased (601 pF vs. 410 pF), which may affect gate drive circuit performance in high-frequency switching applications. Package is SOT-223-4, maintaining footprint compatibility. Product status is Active with ROHS3 compliance. Inventory availability is substantial (41,100 pcs).

ZXMP6A13GTA (Diodes Incorporated)

This part provides parametric substitution with trade-offs in current rating and on-resistance. It maintains 60V Vdss but offers 1.7A continuous drain current (below the 1.9A specification) and higher on-resistance of 390 mOhm @ 900mA, 10V. Gate charge is significantly lower (5.9 nC vs. 14 nC), indicating faster switching characteristics suitable for high-frequency applications. Input capacitance is reduced (219 pF vs. 410 pF), reducing gate drive requirements. Package is SOT-223-3 (three-pin variant), which may require PCB layout modification compared to the four-pin SOT-223-4 footprint. Product status is Active with ROHS3 compliance. Inventory availability is adequate (15,465 pcs).

Selection Basis:

For direct replacement with maximum compatibility: BSP170PH6327XTSA1
For applications requiring higher current margin: NDT2955
For high-frequency switching applications with lower gate drive requirements: ZXMP6A13GTA

All substitutes are Active products with ROHS3 compliance, addressing obsolescence and regulatory requirements of the original part.

Frequently Asked Questions (FAQ)

Q1: Can BSP170PH6327XTSA1 be used as a direct drop-in replacement for BSP170PE6327?

A: Yes. BSP170PH6327XTSA1 is a parametric equivalent with identical electrical specifications (60V Vdss, 1.9A Id, 300 mOhm Rds On, 14 nC Qg) and identical package (PG-SOT223-4). The primary difference is product status (Active vs. Obsolete) and RoHS compliance. No circuit modifications are required.

Q2: What are the key differences between NDT2955 and the original BSP170PE6327?

A: NDT2955 maintains 60V Vdss and 300 mOhm on-resistance but provides higher continuous drain current (2.5A vs. 1.9A) and greater power dissipation capability (3W vs. 1.8W). Gate charge is marginally higher (15 nC vs. 14 nC), and input capacitance is increased (601 pF vs. 410 pF). These differences provide design margin for current-limited applications but may require gate drive circuit evaluation for high-frequency switching.

Q3: Why does ZXMP6A13GTA have a lower continuous drain current rating than the original part?

A: ZXMP6A13GTA is rated for 1.7A continuous drain current, which is below the 1.9A specification of BSP170PE6327. This part is suitable for applications operating below 1.7A. For applications requiring the full 1.9A rating, BSP170PH6327XTSA1 or NDT2955 are recommended.

Q4: Are there package compatibility issues between the substitute parts?

A: BSP170PH6327XTSA1 uses PG-SOT223-4 (four-pin), identical to the original part. NDT2955 uses SOT-223-4 (four-pin), which is footprint-compatible. ZXMP6A13GTA uses SOT-223-3 (three-pin), which differs from the original four-pin configuration and may require PCB layout modification. Verify pin assignments before PCB implementation.

Q5: Which substitute part is recommended for new designs?

A: BSP170PH6327XTSA1 is recommended for new designs requiring direct equivalence to the original specification. It is manufactured by Infineon Technologies (original supplier), maintains identical electrical performance, carries Active product status, and is ROHS3 compliant. NDT2955 is recommended if higher current margin is required. ZXMP6A13GTA is recommended for high-frequency switching applications where lower gate charge and input capacitance provide performance benefits.

Q6: What is the impact of higher input capacitance in NDT2955 compared to the original part?

A: Higher input capacitance (601 pF vs. 410 pF) increases gate charge requirements and may increase gate drive power dissipation. For applications with limited gate drive capability or high switching frequencies, evaluate gate drive circuit performance. The marginal increase in gate charge (15 nC vs. 14 nC) is typically acceptable in most switching applications.

Q7: Can ZXMP6A13GTA be used in applications requiring 1.9A continuous current?

A: No. ZXMP6A13GTA is rated for 1.7A continuous drain current. Using this part in applications requiring 1.9A would exceed the device rating and risk thermal stress and premature failure. For 1.9A applications, use BSP170PH6327XTSA1 or NDT2955.

Q8: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts (BSP170PH6327XTSA1, NDT2955, ZXMP6A13GTA) are ROHS3 compliant. The original BSP170PE6327 is RoHS non-compliant. Substitution addresses regulatory compliance requirements for new production.

Q9: What is the significance of the lower gate threshold voltage in ZXMP6A13GTA?

A: ZXMP6A13GTA has a gate threshold voltage of 1V @ 250µA, compared to 4V for the original part. This lower threshold voltage enables faster turn-on at lower gate drive voltages, which is beneficial for low-voltage gate drive circuits. However, verify gate drive circuit compatibility before implementation.

Q10: Which substitute part has the best inventory availability?

A: NDT2955 has the highest inventory availability at 41,100 pcs. BSP170PH6327XTSA1 has 16,978 pcs, and ZXMP6A13GTA has 15,465 pcs. All three substitutes have substantially higher availability than the original part (749 pcs), supporting production continuity.

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