BSP16T1 Equivalent & Substitute Parts

Part Overview

The BSP16T1 is a PNP bipolar junction transistor manufactured by onsemi, rated for 300 V collector-emitter breakdown voltage and 100 mA maximum collector current in a surface mount SOT-223 package. This component is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The BSP16T1G represents a direct equivalent from the same manufacturer with identical electrical specifications but active product status. The FZT757TA and FZT957TA from Diodes Incorporated serve as higher-performance alternatives with enhanced current and frequency ratings while maintaining the same package form factor and voltage rating.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Voltage - Collector Emitter Breakdown (Max)	300	V
Current - Collector (Ic) (Max)	100	mA
Power - Max	1.5	W
Frequency - Transition	15	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
Supplier Device Package	SOT-223 (TO-261)	—

Substitute Part Grouping Explanation

Substitution of the BSP16T1 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 300 V minimum
Mounting Type: Surface Mount
Package / Case: TO-261-4 or TO-261AA (SOT-223 form factor)

Performance Criteria (Allowable Upgrades):

Current - Collector (Ic) (Max): Equal to or greater than 100 mA
Power - Max: Equal to or greater than 1.5 W
Frequency - Transition: Equal to or greater than 15 MHz

Direct Equivalent: The BSP16T1G matches all electrical specifications and package requirements identically to the BSP16T1, with the distinction of active product status and RoHS3 compliance.

Higher-Performance Alternatives: The FZT757TA and FZT957TA exceed the minimum performance thresholds across current, power, and frequency ratings while maintaining the 300 V voltage rating and SOT-223 package compatibility. These parts support higher collector currents and operating frequencies, enabling their use in applications requiring enhanced performance margins.

Parameter Comparison

Parameter	BSP16T1	BSP16T1G	FZT757TA	FZT957TA
Manufacturer	onsemi	onsemi	Diodes Incorporated	Diodes Incorporated
Product Status	Obsolete	Active	Active	Active
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	100 mA	100 mA	500 mA	1 A
Voltage - Collector Emitter Breakdown (Max)	300 V	300 V	300 V	300 V
Vce Saturation (Max) @ Ib, Ic	2V @ 5mA, 50mA	2V @ 5mA, 50mA	500mV @ 10mA, 100mA	240mV @ 300mA, 1A
Current - Collector Cutoff (Max)	50µA	50µA	100nA (ICBO)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 10V	30 @ 50mA, 10V	50 @ 100mA, 5V	100 @ 500mA, 10V
Power - Max	1.5 W	1.5 W	2 W	3 W
Frequency - Transition	15 MHz	15 MHz	30 MHz	85 MHz
Operating Temperature Range	-65 to 150°C (TJ)	-65 to 150°C (TJ)	-55 to 150°C (TJ)	-55 to 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223 (TO-261)	SOT-223 (TO-261)	SOT-223-3	SOT-223-3
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications): The BSP16T1G is the recommended substitute when exact electrical and thermal performance matching is required. This part maintains all specifications of the obsolete BSP16T1 while offering active product status, ensuring long-term availability and supply chain continuity. The BSP16T1G carries RoHS3 compliance, addressing regulatory requirements for new designs and manufacturing processes.

For Performance-Enhanced Applications: The FZT757TA and FZT957TA are suitable for applications where the BSP16T1 specifications represent minimum requirements rather than exact design constraints. Both alternatives maintain the 300 V voltage rating and SOT-223 package compatibility while providing increased current handling capacity and higher transition frequencies. Selection between these two depends on specific application current and frequency demands.

The FZT757TA supports up to 500 mA collector current and 30 MHz transition frequency, representing a moderate performance upgrade suitable for applications requiring improved current margins.

The FZT957TA supports up to 1 A collector current and 85 MHz transition frequency, providing maximum performance headroom for high-speed or high-current switching applications.

All substitute parts carry RoHS3 compliance and REACH Unaffected status, meeting current regulatory and environmental standards.

Frequently Asked Questions (FAQ)

Q: Can the BSP16T1G be used as a direct replacement for the BSP16T1?

A: Yes. The BSP16T1G is electrically and mechanically identical to the BSP16T1, with matching specifications for collector current (100 mA), voltage rating (300 V), power dissipation (1.5 W), and transition frequency (15 MHz). The primary differences are product status (active versus obsolete) and RoHS compliance (ROHS3 versus non-compliant).

Q: What are the key differences between the BSP16T1 and the FZT757TA?

A: The FZT757TA provides higher performance specifications: maximum collector current of 500 mA (versus 100 mA), maximum power dissipation of 2 W (versus 1.5 W), and transition frequency of 30 MHz (versus 15 MHz). Both maintain the 300 V voltage rating and SOT-223 package form factor. The FZT757TA is manufactured by Diodes Incorporated rather than onsemi.

Q: Can the FZT957TA replace the BSP16T1 in all applications?

A: The FZT957TA is electrically compatible with the BSP16T1 for applications operating within the BSP16T1's specified limits. The FZT957TA's enhanced ratings (1 A collector current, 3 W power dissipation, 85 MHz transition frequency) provide performance margin but do not restrict its use in lower-demand applications. Circuit design verification is necessary to confirm that the FZT957TA's different saturation voltage characteristics (240 mV versus 2 V) do not affect circuit performance.

Q: Are all substitute parts available in the same package?

A: All substitute parts use the SOT-223 package form factor (TO-261-4 or TO-261AA case designation), ensuring mechanical and pin compatibility. The BSP16T1G uses SOT-223 (TO-261) designation, while the FZT757TA and FZT957TA use SOT-223-3 designation. These designations reflect minor supplier documentation variations but represent the same physical package.

Q: What is the operating temperature range difference between the BSP16T1 and the Diodes Incorporated alternatives?

A: The BSP16T1 and BSP16T1G operate from -65°C to 150°C (TJ), while the FZT757TA and FZT957TA operate from -55°C to 150°C (TJ). The lower temperature limit of the Diodes Incorporated parts is 10°C higher. Applications requiring operation below -55°C must use the onsemi parts.

Q: Do all substitute parts meet current regulatory requirements?

A: The BSP16T1G, FZT757TA, and FZT957TA all carry RoHS3 compliance and REACH Unaffected status. The original BSP16T1 is RoHS non-compliant. For new designs or manufacturing processes subject to RoHS requirements, the compliant alternatives are necessary.

Q: What is the difference in collector cutoff current between these parts?

A: The BSP16T1 and BSP16T1G specify 50 µA maximum collector cutoff current. The FZT757TA specifies 100 nA (ICBO), and the FZT957TA specifies 50 nA (ICBO). The Diodes Incorporated parts exhibit significantly lower leakage current, which may improve performance in low-power or high-impedance circuit applications.

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