BSP149L6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BSP149L6327HTSA1 is an N-Channel 200V 660mA MOSFET manufactured by Infineon Technologies in the SIPMOS® series, housed in a PG-SOT223-4-21 surface mount package. This component is classified as obsolete, necessitating identification of equivalent and substitute parts for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 1.8W and is suitable for applications requiring depletion mode N-Channel MOSFET functionality.

Substiute Parts

BSP149L6327HTSA1
Infineon TechnologiesIn Stock: 963BSP149L6327HTSA1 Datasheet
BSP149L6327HTSA1
Current Part
BSP149H6327XTSA1
Infineon TechnologiesIn Stock: 7313BSP149H6327XTSA1 Datasheet
BSP149H6327XTSA1
Parametric Equivalent
BSP149H6906XTSA1
Infineon TechnologiesIn Stock: 2166BSP149H6906XTSA1 Datasheet
BSP149H6906XTSA1
Parametric Equivalent
FQT4N20LTF
onsemiIn Stock: 61227FQT4N20LTF Datasheet
FQT4N20LTF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 660 mA (Ta)
Rds On (Max) @ 660mA, 10V 1.8 Ohm
Gate Threshold Voltage (Vgs(th)) @ 400µA 1 V
Gate Charge (Qg) @ 5V 14 nC
Input Capacitance (Ciss) @ 25V 430 pF
Power Dissipation (Max) 1.8 W (Ta)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type PG-SOT223-4-21 Surface Mount
FET Feature Depletion Mode

Substitute Part Grouping Explanation

Substitution eligibility for the BSP149L6327HTSA1 is determined by strict parametric equivalence across the following critical specifications:

Primary Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id) @ 25°C: 660mA (Ta)
  • Rds On (Max) @ specified Id and Vgs: 1.8Ohm @ 660mA, 10V
  • Gate Threshold Voltage (Vgs(th)): 1V @ 400µA
  • Gate Charge (Qg): 14nC @ 5V
  • Input Capacitance (Ciss): 430pF @ 25V
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • FET Feature: Depletion Mode
  • Package / Case: TO-261-4, TO-261AA

Parametric Equivalent Parts meet all primary equivalence criteria and are direct functional replacements:

  • BSP149H6327XTSA1 (Infineon Technologies, Active status)
  • BSP149H6906XTSA1 (Infineon Technologies, Obsolete status)

Manufacturer Recommended Substitute (FQT4N20LTF by onsemi) exhibits variations in specific parameters while maintaining functional compatibility within the 200V, N-Channel MOSFET category and SOT-223-4 package form factor.

Parameter Comparison

Parameter BSP149L6327HTSA1 BSP149H6327XTSA1 BSP149H6906XTSA1 FQT4N20LTF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies onsemi
Vdss (V) 200 200 200 200
Id @ 25°C (mA) 660 (Ta) 660 (Ta) 660 (Ta) 850 (Tc)
Rds On (Max) (Ohm) 1.8 @ 660mA, 10V 1.8 @ 660mA, 10V 1.8 @ 660mA, 10V 1.35 @ 425mA, 10V
Vgs(th) (V) 1 @ 400µA 1 @ 400µA 1 @ 400µA 2 @ 250µA
Qg (nC) 14 @ 5V 14 @ 5V 14 @ 5V 5.2 @ 5V
Ciss (pF) 430 @ 25V 430 @ 25V 430 @ 25V 310 @ 25V
Power Dissipation (W) 1.8 (Ta) 1.8 (Ta) 1.8 (Ta) 2.2 (Tc)
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package PG-SOT223-4-21 PG-SOT223-4 PG-SOT223-4 SOT-223-4
Product Status Obsolete Active Obsolete Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

For Direct Parametric Equivalence:

BSP149H6327XTSA1 is the primary recommended substitute. This part maintains identical electrical specifications across all critical parameters (Vdss, Id, Rds On, Vgs(th), Qg, Ciss, and power dissipation) and operates within the same temperature range. The part carries Active product status, ensuring long-term availability and supply chain continuity. ROHS3 compliance certification is provided. Packaging is specified as PG-SOT223-4 with Cut Tape (CT) and Digi-Reel® options, supporting both prototype and production procurement workflows. Inventory availability is 7300 pieces.

For Obsolete Status Mitigation:

BSP149H6906XTSA1 provides parametric equivalence identical to BSP149H6327XTSA1 but retains Obsolete product status. This part is suitable only when existing inventory must be consumed or when design validation has been completed with this specific part number. Inventory availability is 2100 pieces.

For Enhanced Performance Characteristics:

FQT4N20LTF (onsemi) is a manufacturer-recommended substitute that operates at the same 200V Vdss rating and shares the SOT-223-4 package footprint. This part exhibits improved performance metrics: higher continuous drain current (850mA vs. 660mA), lower on-resistance (1.35Ohm @ 425mA vs. 1.8Ohm @ 660mA), and reduced gate charge (5.2nC vs. 14nC). These characteristics result in lower switching losses and improved thermal performance (2.2W vs. 1.8W power dissipation). The part carries Active product status and ROHS3 compliance. Inventory availability is 61200 pieces. Parameter variations in Vgs(th) (2V vs. 1V) and Ciss (310pF vs. 430pF) must be evaluated against specific circuit requirements.

Frequently Asked Questions (FAQ)

Q: Can BSP149H6327XTSA1 be used as a direct replacement for BSP149L6327HTSA1?

A: Yes. BSP149H6327XTSA1 is a parametric equivalent with identical electrical specifications across all critical parameters. The primary difference is product status (Active vs. Obsolete) and packaging format (PG-SOT223-4 vs. PG-SOT223-4-21). Both parts are housed in TO-261-4 and TO-261AA case styles and are pin-compatible.

Q: What is the difference between the Infineon SIPMOS® parts and the onsemi FQT4N20LTF?

A: The Infineon BSP149 series parts (BSP149L6327HTSA1, BSP149H6327XTSA1, BSP149H6906XTSA1) are parametric equivalents with identical specifications. The onsemi FQT4N20LTF is a manufacturer-recommended substitute with improved performance: higher current rating (850mA vs. 660mA), lower on-resistance (1.35Ohm vs. 1.8Ohm), and reduced gate charge (5.2nC vs. 14nC). Both share the same 200V Vdss rating and SOT-223-4 package footprint.

Q: Are there packaging compatibility concerns when substituting these parts?

A: All listed parts use TO-261-4 or TO-261AA case styles within SOT-223-4 package families. Physical footprints are compatible. However, verify that your PCB layout accommodates the specific supplier device package designation (PG-SOT223-4-21 vs. PG-SOT223-4 vs. SOT-223-4) to ensure proper solder pad alignment and thermal performance.

Q: Why is BSP149L6327HTSA1 marked as Obsolete?

A: Product obsolescence is determined by the manufacturer. BSP149H6327XTSA1 (Active status) provides identical functionality and is the recommended path for new designs and ongoing procurement.

Q: What are the compliance certifications for these parts?

A: BSP149H6327XTSA1, BSP149H6906XTSA1, and FQT4N20LTF all carry ROHS3 compliance certification. All parts are REACH Unaffected and classified under ECCN EAR99 and HTSUS 8541.29.0095. Moisture Sensitivity Level is 1 (Unlimited) for all parts.

Q: Can FQT4N20LTF be used in applications requiring exactly 660mA continuous drain current?

A: FQT4N20LTF is rated for 850mA continuous drain current (Tc), which exceeds the 660mA requirement of BSP149L6327HTSA1. The part is suitable for applications where the original 660mA specification is a design requirement. However, the higher current rating and improved thermal characteristics (2.2W vs. 1.8W) provide additional design margin. Verify that the lower gate threshold voltage (2V vs. 1V) and reduced input capacitance (310pF vs. 430pF) are compatible with your gate drive circuit.

Q: What is the difference between Ta and Tc temperature measurement conditions?

A: Ta (ambient temperature) and Tc (case temperature) are different measurement reference points. BSP149L6327HTSA1 specifications use Ta; FQT4N20LTF uses Tc. Both parts operate across the same -55°C to 150°C (TJ) junction temperature range. Consult thermal analysis and application-specific requirements to determine which measurement condition applies to your design.

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