BSP126,135 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The BSP126,135 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 250V drain-to-source voltage with 375mA continuous drain current in a surface mount SOT-223 package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for design continuity, production support, and legacy system maintenance where the original component is no longer available or procurement becomes constrained.

Key Parameters

Parameter	BSP126,135	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain-to-Source Voltage (Vdss)	250	V
Continuous Drain Current (Id) @ 25°C	375	mA
On-Resistance (Rds On) @ 300mA, 10V	5	Ohm
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA	2	V
Maximum Gate-Source Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	120	pF
Power Dissipation (Max)	1.5	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package	SOT-223 (TO-261-4, TO-261AA)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BSP126,135 is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The following criteria establish valid substitution relationships:

Primary Substitution Criteria:

FET Type: N-Channel (mandatory match)
Technology: MOSFET (Metal Oxide) (mandatory match)
Mounting Type: Surface Mount (mandatory match)
Package: SOT-223 (TO-261-4, TO-261AA) (mandatory match)
Operating Temperature Range: -55°C to 150°C (mandatory match)
RoHS3 Compliance (mandatory match)
MSL Level 1 (mandatory match)

Secondary Electrical Parameters for Compatibility Assessment:

Drain-to-Source Voltage (Vdss): Must equal or exceed 250V
Continuous Drain Current (Id): Must equal or exceed 375mA
On-Resistance (Rds On): Lower values indicate improved performance; higher values require application verification
Gate-Source Threshold Voltage (Vgs(th)): Variation acceptable within gate drive circuit design margins
Maximum Gate-Source Voltage (Vgs): Must accommodate ±20V or greater
Input Capacitance (Ciss): Variation acceptable; affects switching speed
Power Dissipation: Must equal or exceed 1.5W

The substitute parts listed below satisfy all mandatory criteria and provide electrical performance characteristics suitable for applications originally designed for the BSP126,135.

Parameter Comparison

Parameter	BSP126,135	STN1HNK60	STN1NK60Z	ZVN2120GTA	ZVN4424GTA	ZVNL120GTA	Unit
Manufacturer	Nexperia USA Inc.	STMicroelectronics	STMicroelectronics	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	—
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	—
Vdss	250	600	600	200	240	200	V
Id @ 25°C	375	400	300	320	500	320	mA
Rds On (Max)	5	8.5	15	10	5.5	10	Ohm
Vgs(th) (Max)	2	3.7	4.5	3	1.8	1.5	V
Vgs (Max)	±20	±30	±30	±20	±40	±20	V
Ciss @ 25V	120	156	94	85	200	85	pF
Power Dissipation (Max)	1.5	3.3	3.3	2	2.5	2	W
Operating Temperature	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	°C
Package	SOT-223	SOT-223	SOT-223	SOT-223-3	SOT-223-3	SOT-223-3	—
Product Status	Not For New Designs	Active	Active	Active	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

STN1HNK60 (STMicroelectronics)

The STN1HNK60 is an active-status N-Channel MOSFET with 600V Vdss rating, exceeding the BSP126,135 voltage specification. Continuous drain current of 400mA meets the 375mA requirement. On-resistance of 8.5Ohm is higher than the original 5Ohm, resulting in increased power dissipation in high-current applications. Maximum power dissipation of 3.3W provides thermal margin. This device is suitable for applications where voltage headroom is beneficial and thermal management is adequate. RoHS3 compliance and MSL Level 1 certification match the original part.

STN1NK60Z (STMicroelectronics)

The STN1NK60Z is an active-status N-Channel MOSFET with 600V Vdss rating and 300mA continuous drain current. The 300mA rating falls below the BSP126,135 specification of 375mA, limiting its application to designs with reduced current requirements. On-resistance of 15Ohm is significantly higher than the original, requiring thermal analysis for power-dissipation-sensitive applications. This device is suitable only for applications where the 300mA current limit is acceptable. RoHS3 compliance and MSL Level 1 certification are maintained.

ZVN2120GTA (Diodes Incorporated)

The ZVN2120GTA is an active-status N-Channel MOSFET with 200V Vdss rating, below the BSP126,135 specification of 250V. Continuous drain current of 320mA is below the 375mA requirement. On-resistance of 10Ohm and power dissipation of 2W are acceptable. This device is suitable only for applications where voltage and current requirements are reduced compared to the original design. RoHS3 compliance and MSL Level 1 certification are maintained.

ZVN4424GTA (Diodes Incorporated)

The ZVN4424GTA is an active-status N-Channel MOSFET with 240V Vdss rating, approaching the BSP126,135 specification of 250V. Continuous drain current of 500mA exceeds the 375mA requirement, providing current margin. On-resistance of 5.5Ohm closely matches the original 5Ohm specification. Power dissipation of 2.5W exceeds the original 1.5W, providing thermal margin. Gate-source threshold voltage of 1.8V is lower than the original 2V, requiring gate drive circuit verification. Maximum gate-source voltage of ±40V exceeds the ±20V requirement. This device provides the closest electrical performance match to the BSP126,135. RoHS3 compliance and MSL Level 1 certification are maintained.

ZVNL120GTA (Diodes Incorporated)

The ZVNL120GTA is an active-status N-Channel MOSFET with 200V Vdss rating, below the BSP126,135 specification of 250V. Continuous drain current of 320mA is below the 375mA requirement. On-resistance of 10Ohm and power dissipation of 2W are acceptable. Gate-source threshold voltage of 1.5V is lower than the original 2V. This device is suitable only for applications where voltage and current requirements are reduced compared to the original design. RoHS3 compliance and MSL Level 1 certification are maintained.

Frequently Asked Questions (FAQ)

Q: Can the STN1HNK60 or STN1NK60Z directly replace the BSP126,135 in all applications?

A: Direct replacement depends on application-specific requirements. Both STMicroelectronics devices feature higher Vdss ratings (600V) than the original 250V specification, providing voltage margin. However, STN1NK60Z has reduced continuous drain current (300mA versus 375mA), limiting its use to lower-current applications. STN1HNK60 meets the current requirement at 400mA. On-resistance values differ, affecting power dissipation and thermal performance. Gate-source threshold voltages differ, requiring gate drive circuit verification. Electrical simulation and prototype testing are necessary to confirm compatibility in specific circuit topologies.

Q: Why do the Diodes Incorporated parts (ZVN2120GTA, ZVN4424GTA, ZVNL120GTA) have lower Vdss ratings than the BSP126,135?

A: The Diodes Incorporated devices are designed for applications with lower voltage requirements. ZVN2120GTA and ZVNL120GTA are rated for 200V, while ZVN4424GTA is rated for 240V. These lower ratings do not preclude substitution in applications where the circuit voltage does not exceed these limits. However, they cannot be used in circuits requiring the full 250V capability of the BSP126,135. Application voltage analysis is required before selection.

Q: What is the significance of the different Vgs(th) values among the substitute parts?

A: Gate-source threshold voltage (Vgs(th)) determines the gate voltage at which the MOSFET begins to conduct. The BSP126,135 has a Vgs(th) of 2V at 1mA. Substitute parts range from 1.5V (ZVNL120GTA) to 4.5V (STN1NK60Z). Lower threshold voltages allow operation with reduced gate drive voltage, while higher values require stronger gate drive signals. Gate drive circuit design must accommodate the selected device's threshold voltage to ensure proper switching performance and logic-level compatibility.

Q: Are all substitute parts available in the same SOT-223 package?

A: All substitute parts are available in SOT-223 surface mount packages with pin configurations TO-261-4 or TO-261AA, matching the BSP126,135 package specification. Physical footprint compatibility is maintained across all listed devices, allowing direct PCB layout substitution without redesign.

Q: What is the impact of different on-resistance (Rds On) values on circuit performance?

A: On-resistance determines the voltage drop across the MOSFET when conducting and directly affects power dissipation. The BSP126,135 has Rds On of 5Ohm at 300mA and 10V gate drive. Substitute parts range from 5.5Ohm (ZVN4424GTA) to 15Ohm (STN1NK60Z). Higher on-resistance increases power dissipation according to P = I²R, requiring enhanced thermal management. Lower on-resistance reduces power dissipation and heat generation. Application current levels and thermal budget determine acceptable on-resistance values.

Q: Do all substitute parts maintain RoHS3 compliance and MSL Level 1 certification?

A: Yes. All listed substitute parts are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating, matching the BSP126,135 certifications. This ensures compatibility with standard manufacturing processes and storage requirements without additional moisture control measures.

Q: Which substitute part provides the closest performance match to the BSP126,135?

A: The ZVN4424GTA provides the closest electrical performance match, with 240V Vdss (near the original 250V), 500mA continuous drain current (exceeding the 375mA requirement), and 5.5Ohm on-resistance (closely matching the original 5Ohm). However, gate-source threshold voltage of 1.8V differs from the original 2V, requiring gate drive circuit verification. Application-specific requirements determine whether this device is suitable for direct substitution.

Q: Can the higher power dissipation ratings of substitute parts (2W to 3.3W versus 1.5W) be used to improve thermal performance?

A: Higher power dissipation ratings indicate greater thermal capability but do not reduce actual power dissipation in the circuit. Actual power dissipation is determined by on-resistance and operating current according to P = I²R. Devices with lower on-resistance values generate less heat. Higher power dissipation ratings provide thermal margin, allowing operation at higher currents or ambient temperatures without exceeding junction temperature limits. Thermal analysis based on actual circuit current and ambient conditions is required.

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