BSP126,115 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The BSP126,115 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 250V drain-to-source voltage with 375mA continuous drain current in a surface mount SOT-223 package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. Identification of equivalent and substitute parts is necessary for design continuity, inventory management, and ongoing production support for existing applications.

Substiute Parts

BSP126,115

Nexperia USA Inc.In Stock: 3923BSP126,115 Datasheet

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STN1HNK60

STMicroelectronicsIn Stock: 29293STN1HNK60 Datasheet

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STN1NK60Z

STMicroelectronicsIn Stock: 65417STN1NK60Z Datasheet

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ZVN2120GTA

Diodes IncorporatedIn Stock: 15895ZVN2120GTA Datasheet

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ZVN4424GTA

Diodes IncorporatedIn Stock: 13170ZVN4424GTA Datasheet

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ZVNL120GTA

Diodes IncorporatedIn Stock: 2564ZVNL120GTA Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the BSP126,115 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Package: SOT-223 (TO-261-4, TO-261AA) surface mount
• Operating Temperature Range: -55°C to 150°C (TJ)
• Mounting Type: Surface Mount

Electrical Performance Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 250V
• Continuous Drain Current (Id): Must equal or exceed 375mA at 25°C
• On-State Resistance (Rds On): Lower values indicate improved performance
• Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry
• Maximum Gate-Source Voltage (Vgs): Must accommodate ±20V or greater
• Power Dissipation: Must support 1.5W or greater thermal capability

Compliance Requirements:

• RoHS3 Compliant
• Moisture Sensitivity Level 1 (Unlimited)
• REACH Unaffected status

Substitute parts are grouped into two categories based on voltage rating: lower voltage alternatives (200V–240V) suitable for applications with reduced voltage headroom, and higher voltage alternatives (600V) providing enhanced voltage margin for transient protection.

Parameter Comparison

Engineering Selection Recommendations

Direct Substitutes (Equivalent Voltage Rating):

ZVN4424GTA (Diodes Incorporated) provides the closest electrical equivalence to BSP126,115. This device maintains a 240V Vdss rating within the original specification envelope, delivers 500mA continuous drain current (exceeding the 375mA requirement), and achieves 5.5Ohm on-state resistance comparable to the original part. The ZVN4424GTA is in Active product status with full RoHS3 compliance and unlimited moisture sensitivity rating. This part is suitable for direct replacement in existing designs without circuit modification.

Lower Voltage Alternatives (Reduced Voltage Margin):

ZVN2120GTA and ZVNL120GTA (both Diodes Incorporated) are rated at 200V Vdss, which is below the original 250V specification. These parts deliver 320mA continuous drain current and 2W power dissipation. Both devices are in Active product status with RoHS3 compliance. These alternatives are applicable only in applications where the maximum operating voltage does not approach 200V and where transient voltage spikes are controlled below this threshold.

Higher Voltage Alternatives (Enhanced Voltage Margin):

STN1NK60Z and STN1HNK60 (both STMicroelectronics, SuperMESH™ series) are rated at 600V Vdss, providing significant voltage margin above the original 250V specification. STN1NK60Z delivers 300mA continuous drain current with 15Ohm on-state resistance. STN1HNK60 delivers 400mA continuous drain current with 8.5Ohm on-state resistance. Both devices are in Active product status with RoHS3 compliance and 3.3W power dissipation capability. These alternatives are suitable for applications requiring enhanced transient voltage protection or where circuit topology permits higher voltage-rated devices.

Selection Basis:

All substitute parts meet the mandatory compatibility criteria: N-Channel MOSFET technology, SOT-223 surface mount package, -55°C to 150°C operating temperature range, RoHS3 compliance, and unlimited moisture sensitivity rating. Product status is Active for all substitute options, ensuring long-term availability and supply continuity. Selection among alternatives depends on application voltage requirements, current demands, and thermal dissipation constraints.

Frequently Asked Questions (FAQ)

Q: Can ZVN2120GTA or ZVNL120GTA be used as direct replacements for BSP126,115?

A: ZVN2120GTA and ZVNL120GTA are rated at 200V Vdss, which is 50V below the original BSP126,115 specification of 250V. These parts are suitable only in applications where the maximum operating voltage remains below 200V and transient overvoltage events are controlled. They are not direct replacements for designs requiring the full 250V voltage rating.

Q: What is the advantage of using STN1NK60Z or STN1HNK60 over ZVN4424GTA?

A: STN1NK60Z and STN1HNK60 provide 600V Vdss rating, offering 350V additional voltage margin compared to the original 250V specification. This enhanced voltage rating provides greater protection against transient overvoltage events and permits use in higher voltage circuit topologies. The trade-off is higher on-state resistance (15Ohm for STN1NK60Z, 8.5Ohm for STN1HNK60) compared to ZVN4424GTA (5.5Ohm), resulting in increased power dissipation at equivalent current levels.

Q: Are all substitute parts available in the same SOT-223 package?

A: All substitute parts are available in SOT-223 surface mount package with TO-261-4 and TO-261AA case designations, matching the original BSP126,115 package specification. Pin configuration and footprint compatibility are maintained across all alternatives.

Q: What is the difference between ZVN2120GTA and ZVNL120GTA?

A: Both devices are rated at 200V Vdss with 320mA continuous drain current and 2W power dissipation. The primary difference is gate-source threshold voltage: ZVN2120GTA has Vgs(th) of 3V at 1mA, while ZVNL120GTA has Vgs(th) of 1.5V at 1mA. ZVNL120GTA requires lower gate drive voltage for equivalent switching performance. Selection depends on available gate drive voltage in the application circuit.

Q: Can BSP126,115 be used interchangeably with ZVN4424GTA in existing production?

A: ZVN4424GTA is electrically compatible with BSP126,115 within the specified parameter ranges. However, BSP126,115 is classified as "Not For New Designs," indicating end-of-life status. ZVN4424GTA is in Active product status and is the recommended choice for ongoing production and new design implementations. Existing inventory of BSP126,115 may be used until depletion, after which transition to ZVN4424GTA is necessary.

Q: What is the impact of higher on-state resistance in STN1HNK60 compared to ZVN4424GTA?

A: STN1HNK60 has 8.5Ohm on-state resistance at 500mA and 10V gate-source voltage, compared to ZVN4424GTA at 5.5Ohm under equivalent conditions. At 375mA drain current, the voltage drop across STN1HNK60 is approximately 3.2V, compared to 2.1V for ZVN4424GTA. This results in approximately 1.1V additional voltage drop and proportionally higher power dissipation. Thermal design must accommodate this increased dissipation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed—ZVN2120GTA, ZVN4424GTA, ZVNL120GTA, STN1NK60Z, and STN1HNK60—are RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1), matching the original BSP126,115 compliance status.

Q: Which substitute part has the lowest gate charge?

A: STN1NK60Z has the lowest gate charge specification at 6.9nC at 10V gate-source voltage. Lower gate charge reduces switching losses and permits faster switching transitions, which is advantageous in high-frequency switching applications. This parameter should be considered when gate drive circuit design is optimized for switching speed.