BSO150N03 Equivalent & Substitute Parts Reference

Part Overview

The BSO150N03 is a dual N-channel MOSFET array manufactured by Infineon Technologies, rated for 30V drain-source voltage and 7.6A continuous drain current. This component is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The part is housed in an 8-SOIC surface mount package and features the OptiMOS™ series technology platform.

Due to its obsolete status, sourcing new inventory from the original manufacturer is no longer available through standard distribution channels. Active substitute parts must satisfy the electrical and mechanical parameters defined for this product category to ensure functional compatibility in existing circuit applications.

Substiute Parts

BSO150N03

Infineon TechnologiesIn Stock: 44305BSO150N03 Datasheet

Current PartRFQ

HAT2092R-EL-E

Renesas Electronics CorporationIn Stock: 16534HAT2092R-EL-E Datasheet

MFR RecommendedRFQ

NTMD4820NR2G

onsemiIn Stock: 15464NTMD4820NR2G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution logic for the BSO150N03 is based on strict alignment of the following critical parameters:

Critical Parameters (Must Match or Exceed):

• Configuration: Dual N-channel MOSFET array
• Drain to Source Voltage (Vdss): 30V minimum
• Package Type: 8-SOIC surface mount form factor with 0.154" (3.90mm) width
• Mounting Technology: Surface mount compatible with standard PCB assembly processes

Important Parameters (Must Be Compatible):

• Continuous Drain Current (Id): Substitute must support minimum 7.6A at 25°C
• On-State Resistance (Rds On): Substitute must not exceed 15mOhm at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): Substitute must operate within logic-level gate drive specifications
• Operating Temperature Range: Substitute must support -55°C to 150°C junction temperature minimum
• Power Dissipation: Substitute must handle minimum 1.4W thermal load

Substitute parts identified below satisfy all critical parameters and maintain compatibility with the original BSO150N03 electrical and mechanical specifications.

Parameter Comparison

Engineering Selection Recommendations

HAT2092R-EL-E (Renesas Electronics Corporation)

The HAT2092R-EL-E is an active product with ROHS3 compliance and MSL 1 rating, providing superior moisture handling characteristics compared to the obsolete BSO150N03. This part exceeds the original specifications with 11A continuous drain current and 3W power dissipation capability. The 8-SOIC package footprint is mechanically identical to the BSO150N03. Gate charge at 22nC @ 10V is higher than the original specification, which may require gate drive circuit evaluation in high-frequency switching applications. Operating temperature range is specified to 150°C junction temperature. This substitute is suitable for applications requiring higher current capacity and improved long-term supply chain availability.

NTMD4820NR2G (onsemi)

The NTMD4820NR2G is an active product with ROHS3 compliance and MSL 1 rating. This part maintains the full operating temperature range of -55°C to 150°C, matching the original BSO150N03 specification. Continuous drain current is rated at 4.9A, which is lower than the original 7.6A specification. On-state resistance is 20mOhm @ 7.5A, 10V, representing a 33% increase compared to the original part. Gate charge is reduced to 7.7nC @ 4.5V, providing faster switching characteristics. The 8-SOIC package is mechanically compatible. This substitute is appropriate for applications where the original current rating can be derated or where lower gate charge is beneficial for circuit performance.

Both substitute parts satisfy the critical mechanical and voltage parameters. Selection between HAT2092R-EL-E and NTMD4820NR2G depends on application current requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the HAT2092R-EL-E directly replace the BSO150N03 in all applications?

A: The HAT2092R-EL-E is mechanically and electrically compatible in terms of package footprint, voltage rating, and dual N-channel configuration. However, the higher gate charge (22nC vs. 15nC) may affect gate drive circuit timing in high-frequency switching applications. Circuit simulation or bench testing is recommended for applications operating above 1 MHz switching frequency.

Q: What is the significance of the MSL rating difference between BSO150N03 and the substitute parts?

A: The BSO150N03 has MSL 3 (168 hours), while both substitute parts have MSL 1 (unlimited). MSL 1 indicates superior moisture resistance and longer shelf life without requiring baking before reflow soldering. This provides manufacturing process flexibility and reduces component handling costs.

Q: Is the NTMD4820NR2G suitable if my application requires 7.6A continuous current?

A: The NTMD4820NR2G is rated for 4.9A continuous drain current, which is 36% below the original BSO150N03 specification. This part is not suitable for applications requiring the full 7.6A rating. The HAT2092R-EL-E, rated at 11A, is the appropriate choice for maintaining or exceeding the original current capacity.

Q: Are both substitute parts available in the same 8-SOIC package?

A: Yes. Both HAT2092R-EL-E and NTMD4820NR2G are packaged in 8-SOIC (0.154", 3.90mm width) format, which is mechanically identical to the BSO150N03. PCB layout and footprint modifications are not required for package compatibility.

Q: What is the impact of the higher on-state resistance in the NTMD4820NR2G?

A: The NTMD4820NR2G has Rds On of 20mOhm @ 7.5A, 10V, compared to 15mOhm @ 9.1A, 10V for the BSO150N03. At equivalent gate voltage and current levels, the higher resistance results in increased power dissipation and heat generation. Thermal design calculations should account for this 33% increase in on-state resistance.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both HAT2092R-EL-E and NTMD4820NR2G carry ROHS3 compliance certification. The original BSO150N03 RoHS status is not specified in the available documentation.

Q: Can I use either substitute part interchangeably in my design?

A: No. Selection between HAT2092R-EL-E and NTMD4820NR2G must be based on specific application requirements. The HAT2092R-EL-E is suitable for applications requiring higher current capacity (11A). The NTMD4820NR2G is appropriate for applications where current requirements can be derated below 4.9A or where lower gate charge is beneficial. Both parts satisfy the 30V voltage rating and 8-SOIC package requirement.