BSM75GD120DN2BOSA1 Equivalent & Substitute Parts

Part Overview

The BSM75GD120DN2BOSA1 is an IGBT Module manufactured by Infineon Technologies, configured as a three-phase inverter with a maximum collector-emitter breakdown voltage of 1200 V and maximum collector current of 103 A. This chassis mount module delivers a maximum power rating of 520 W and operates at a maximum junction temperature of 150°C.

The BSM75GD120DN2BOSA1 is classified as an obsolete product. Identification of equivalent and substitute parts is necessary to support system maintenance, design updates, and procurement continuity where original components are no longer available through standard distribution channels.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	V
Current - Collector (Ic) (Max)	103	A
Power - Max	520	W
Vce(on) (Max) @ Vge, Ic	3 V @ 15 V, 75 A	V
Current - Collector Cutoff (Max)	1.5	mA
Input Capacitance (Cies) @ Vce	5.1 nF @ 25 V	nF
Configuration	Three Phase Inverter	—
Mounting Type	Chassis Mount	—
Operating Temperature (Max)	150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the BSM75GD120DN2BOSA1 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute part must maintain the 1200 V collector-emitter breakdown voltage specification to ensure compatibility with the system design voltage class.

Current Rating: The substitute part must support a collector current rating equal to or greater than 103 A to handle the maximum current demands of the application.

Power Dissipation: The substitute part must support a power rating equal to or greater than 520 W to accommodate thermal requirements.

Configuration: The substitute part must maintain the three-phase inverter configuration to ensure functional compatibility with the inverter topology.

Mounting Type: The substitute part must retain chassis mount packaging to ensure mechanical compatibility with the system assembly.

Compliance: The substitute part must maintain ROHS3 compliance and REACH unaffected status to satisfy regulatory requirements.

The FS150R12KT4B9BOSA1 meets all substitution criteria through equivalent voltage rating, superior current rating (150 A), superior power rating (750 W), identical configuration, identical mounting type, and equivalent compliance certifications.

Parameter Comparison

Parameter	BSM75GD120DN2BOSA1	FS150R12KT4B9BOSA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
Category	Transistors, IGBTs	Transistors, IGBTs	—
Voltage - Collector Emitter Breakdown (Max)	1200	1200	V
Current - Collector (Ic) (Max)	103	150	A
Power - Max	520	750	W
Vce(on) (Max) @ Vge, Ic	3 V @ 15 V, 75 A	2.1 V @ 15 V, 150 A	V
Current - Collector Cutoff (Max)	1.5	1	mA
Input Capacitance (Cies) @ Vce	5.1 nF @ 25 V	9.35 nF @ 25 V	nF
Configuration	Three Phase Inverter	Three Phase Inverter	—
Mounting Type	Chassis Mount	Chassis Mount	—
Operating Temperature (Max)	150	150	°C
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The FS150R12KT4B9BOSA1 is the qualified substitute for the obsolete BSM75GD120DN2BOSA1 based on the following engineering criteria:

Voltage Compatibility: Both parts operate at 1200 V collector-emitter breakdown voltage, ensuring direct compatibility with existing system voltage specifications.

Current and Power Margin: The FS150R12KT4B9BOSA1 provides 150 A maximum collector current and 750 W maximum power dissipation, exceeding the original part's 103 A and 520 W ratings. This provides operational margin for the application.

Regulatory Compliance: Both parts maintain ROHS3 compliance and REACH unaffected status, satisfying current environmental and regulatory requirements.

Product Status: The FS150R12KT4B9BOSA1 is classified as an active product with current manufacturing support and availability, eliminating obsolescence risk associated with the original part.

Functional Configuration: Both parts maintain identical three-phase inverter configuration and chassis mount packaging, ensuring mechanical and functional compatibility with existing system designs.

Frequently Asked Questions (FAQ)

Q: Can the FS150R12KT4B9BOSA1 directly replace the BSM75GD120DN2BOSA1 in existing designs?

A: Yes. Both parts share identical voltage rating (1200 V), configuration (three-phase inverter), and mounting type (chassis mount). The substitute part exceeds the original part's current and power specifications, providing operational compatibility.

Q: What are the key differences between these two IGBT modules?

A: The FS150R12KT4B9BOSA1 features Trench Field Stop IGBT technology, delivering higher current capacity (150 A versus 103 A), higher power rating (750 W versus 520 W), lower on-state voltage (2.1 V versus 3 V at rated conditions), and lower collector cutoff current (1 mA versus 1.5 mA). The substitute part is an active product, whereas the original is obsolete.

Q: Are there packaging differences between these parts?

A: Both parts use chassis mount module packaging. The FS150R12KT4B9BOSA1 is supplied in tray packaging, while the original part packaging specification is not provided. Both maintain identical mechanical mounting interfaces.

Q: Does the higher input capacitance of the FS150R12KT4B9BOSA1 affect circuit performance?

A: The FS150R12KT4B9BOSA1 has input capacitance of 9.35 nF compared to 5.1 nF for the original part. This parameter is provided for reference; circuit-level impact depends on gate drive circuit design and switching frequency specifications not included in this comparison.

Q: Are both parts compliant with current regulatory standards?

A: Yes. Both the BSM75GD120DN2BOSA1 and FS150R12KT4B9BOSA1 are ROHS3 compliant and REACH unaffected, satisfying current environmental and regulatory requirements.

Q: Why is the original part classified as obsolete?

A: The BSM75GD120DN2BOSA1 is no longer in active production. The FS150R12KT4B9BOSA1 represents the current generation equivalent with enhanced performance characteristics and active manufacturing support.

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