BSM50GD120DN2G IGBT Module Equivalent & Substitute Parts

Part Overview

The BSM50GD120DN2G is a full bridge IGBT module manufactured by Infineon Technologies, rated for 1200 V collector-emitter breakdown voltage and 78 A maximum collector current with 400 W power dissipation capability. This module is designed for chassis mount applications requiring high-voltage switching in power conversion circuits.

The BSM50GD120DN2G has reached obsolete product status. Identifying functionally equivalent substitute parts is necessary to maintain design continuity and ensure supply chain availability for applications currently utilizing this module.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	V
Current - Collector (Ic) (Max)	78	A
Power - Max	400	W
Vce(on) (Max) @ Vge, Ic	3.7 V @ 15 V, 50 A	V
Input Capacitance (Cies) @ Vce	33 nF @ 25 V	nF
Operating Temperature (TJ)	150	°C
Mounting Type	Chassis Mount	—
Configuration	Full Bridge	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the BSM50GD120DN2G is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Voltage rating: 1200 V collector-emitter breakdown voltage
Current capability: Minimum 78 A collector current
Power dissipation: Minimum 400 W
Mounting configuration: Chassis mount
Moisture sensitivity: MSL 1 or equivalent

Secondary Compatibility Factors:

Input capacitance characteristics
On-state voltage (Vce(on)) performance
Operating temperature range
Package form factor compatibility

The MWI50-12A7 from IXYS meets the primary electrical requirements with 1200 V voltage rating and 85 A current capability, exceeding the original specification. The substitute maintains chassis mount configuration and MSL 1 rating, ensuring mechanical and environmental compatibility.

Parameter Comparison

Parameter	BSM50GD120DN2G (Infineon)	MWI50-12A7 (IXYS)	Unit
Voltage - Collector Emitter Breakdown (Max)	1200	1200	V
Current - Collector (Ic) (Max)	78	85	A
Power - Max	400	350	W
Vce(on) (Max) @ Vge, Ic	3.7 V @ 15 V, 50 A	2.7 V @ 15 V, 50 A	V
Input Capacitance (Cies) @ Vce	33 nF @ 25 V	3.3 nF @ 25 V	nF
Operating Temperature (TJ)	150	−40 to 150	°C
Mounting Type	Chassis Mount	Chassis Mount	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
REACH Status	REACH Unaffected	REACH Unaffected	—
ECCN	EAR99	EAR99	—

Engineering Selection Recommendations

Product Status Consideration: The BSM50GD120DN2G is classified as obsolete, while the MWI50-12A7 maintains active product status with current manufacturing support and availability.

Compliance and Certification: Both modules carry identical REACH and ECCN classifications (REACH Unaffected, EAR99), ensuring regulatory equivalence. The MWI50-12A7 additionally carries RoHS3 compliance certification, providing enhanced environmental compliance for new designs.

Electrical Performance: The MWI50-12A7 demonstrates superior on-state voltage performance (2.7 V versus 3.7 V at rated conditions), resulting in lower conduction losses. The substitute's 85 A current rating exceeds the original 78 A specification, providing design margin. Input capacitance is significantly lower (3.3 nF versus 33 nF), affecting switching characteristics and gate drive requirements.

Thermal and Environmental: The MWI50-12A7 extends the operating temperature range to −40°C to 150°C, compared to the fixed 150°C maximum of the original part, offering broader environmental applicability.

Mechanical Compatibility: Both modules utilize chassis mount configuration with MSL 1 rating, ensuring equivalent mechanical installation and moisture handling requirements.

Frequently Asked Questions (FAQ)

Q: Can the MWI50-12A7 directly replace the BSM50GD120DN2G in existing applications?

A: Electrical compatibility is established through matching 1200 V voltage rating and exceeding current requirements (85 A versus 78 A). Mechanical compatibility is confirmed through identical chassis mount configuration. However, the lower input capacitance (3.3 nF versus 33 nF) and improved on-state voltage (2.7 V versus 3.7 V) require verification that gate drive circuits and thermal management designs accommodate these performance differences.

Q: What are the key differences in electrical performance?

A: The MWI50-12A7 exhibits lower conduction losses due to reduced Vce(on) and provides higher current capability. Input capacitance is substantially lower, which affects gate charge requirements and switching speed characteristics. These differences may improve overall system efficiency but require circuit-level validation.

Q: Are there package or mounting differences?

A: Both modules are specified as chassis mount with identical MSL 1 rating. The original part uses a generic Module package designation, while the substitute specifies E2 package form. Physical dimensions and mounting interface compatibility must be confirmed through detailed package drawings.

Q: What is the significance of the extended temperature range in the MWI50-12A7?

A: The MWI50-12A7 operates from −40°C to 150°C, compared to the BSM50GD120DN2G fixed 150°C maximum. This extended range permits operation in wider environmental conditions and provides thermal design margin in applications approaching the original part's temperature limit.

Q: Are regulatory and compliance requirements equivalent?

A: Both modules carry identical REACH Unaffected and EAR99 classifications. The MWI50-12A7 additionally meets RoHS3 compliance, providing enhanced environmental standards for new designs and future regulatory alignment.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message