BSL315PL6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BSL315PL6327HTSA1 is a dual P-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications in the OptiMOS™ series. This component features a 30V drain-to-source voltage rating with 1.5A continuous drain current and 500mW maximum power dissipation in a SOT-23-6 thin package configuration.

The BSL315PL6327HTSA1 is classified as an obsolete product. Identification of equivalent substitute components is necessary to support ongoing design requirements, maintenance operations, and production continuity where original inventory is depleted or unavailable.

Substiute Parts

BSL315PL6327HTSA1

Infineon TechnologiesIn Stock: 930BSL315PL6327HTSA1 Datasheet

Current PartRFQ

SI3993CDV-T1-GE3

Vishay SiliconixIn Stock: 121631SI3993CDV-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute components for the BSL315PL6327HTSA1 are identified based on strict electrical and mechanical parameter compatibility within the dual P-channel MOSFET category. The following criteria establish substitution validity:

Electrical Compatibility Requirements:

• Drain to Source Voltage (Vdss): Equal to or greater than 30V
• Configuration: Dual P-Channel (2 P-Channel)
• Technology: MOSFET (Metal Oxide)
• Operating Temperature Range: Minimum -55°C to 150°C (TJ)

Mechanical Compatibility Requirements:

• Package / Case: SOT-23-6 Thin or TSOT-23-6
• Mounting Type: Surface Mount

Performance Considerations:

• Continuous Drain Current (Id): Equal to or greater than 1.5A at 25°C
• Maximum Power Dissipation: Equal to or greater than 500mW
• On-State Resistance (Rds On): Lower or equal values indicate improved performance

The SI3993CDV-T1-GE3 manufactured by Vishay Siliconix meets all substitution criteria and is classified as an active product with enhanced electrical performance characteristics.

Parameter Comparison

Engineering Selection Recommendations

The SI3993CDV-T1-GE3 is a direct substitute for the BSL315PL6327HTSA1 based on the following engineering factors:

Product Status: The SI3993CDV-T1-GE3 is classified as an active product with current manufacturing support and availability. The BSL315PL6327HTSA1 is obsolete, making the SI3993CDV-T1-GE3 the appropriate selection for new designs and ongoing production requirements.

Regulatory Compliance: Both components maintain REACH Unaffected status and EAR99 export classification. The SI3993CDV-T1-GE3 carries RoHS3 Compliance certification, meeting current environmental and hazardous substance restrictions.

Electrical Performance: The SI3993CDV-T1-GE3 exceeds the minimum electrical requirements of the BSL315PL6327HTSA1 across all critical parameters. Continuous drain current capability is increased from 1.5A to 2.9A, maximum power dissipation is increased from 500mW to 1.4W, and on-state resistance is reduced from 150mOhm to 111mOhm. These improvements provide enhanced thermal performance and reduced power loss in equivalent circuit applications.

Package Compatibility: Both components utilize identical SOT-23-6 thin package configurations with surface mount mounting type, ensuring mechanical and thermal compatibility with existing PCB layouts and assembly processes.

Moisture Sensitivity: Both components are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

Frequently Asked Questions (FAQ)

Q: Can the SI3993CDV-T1-GE3 be used as a direct replacement for the BSL315PL6327HTSA1 in existing circuit designs?

A: Yes. The SI3993CDV-T1-GE3 meets all electrical and mechanical compatibility requirements for direct substitution. Both components feature identical 30V Vdss ratings, dual P-channel configuration, SOT-23-6 thin package, and -55°C to 150°C operating temperature range. The SI3993CDV-T1-GE3 provides enhanced performance with higher continuous drain current (2.9A vs. 1.5A) and lower on-state resistance (111mOhm vs. 150mOhm).

Q: What are the key differences between these two MOSFET arrays?

A: The primary differences are product status and performance characteristics. The BSL315PL6327HTSA1 is obsolete, while the SI3993CDV-T1-GE3 is an active product. The SI3993CDV-T1-GE3 offers superior electrical performance with nearly double the continuous drain current capability, 2.8 times greater maximum power dissipation, and lower on-state resistance. Input capacitance is reduced from 282pF to 210pF, improving switching speed characteristics.

Q: Are there any package or pinout differences between these components?

A: No. Both components use identical SOT-23-6 thin package configurations with surface mount mounting type. Pinout compatibility is maintained, allowing direct PCB layout reuse without modification.

Q: What is the significance of the lower on-state resistance in the SI3993CDV-T1-GE3?

A: Lower on-state resistance (Rds On) reduces power dissipation during conduction, resulting in lower junction temperatures and improved thermal performance. The SI3993CDV-T1-GE3 reduces Rds On from 150mOhm to 111mOhm, decreasing resistive losses and enabling operation at higher current levels with equivalent thermal management.

Q: Are both components RoHS compliant?

A: The SI3993CDV-T1-GE3 is RoHS3 compliant. The BSL315PL6327HTSA1 does not specify RoHS compliance status in the provided data. Both components maintain REACH Unaffected status.

Q: What is the moisture sensitivity level for these components?

A: Both the BSL315PL6327HTSA1 and SI3993CDV-T1-GE3 are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. These components do not require special moisture control during storage, handling, or assembly processes.

Q: Can the SI3993CDV-T1-GE3 be used in applications requiring the exact 1.5A current specification of the original part?

A: Yes. The SI3993CDV-T1-GE3 is rated for 2.9A continuous drain current, which exceeds the 1.5A requirement of the BSL315PL6327HTSA1. The substitute component operates safely at the lower current specification with improved thermal margin and reduced power dissipation.