BSL211SP P-Channel MOSFET 20V 4.7A Equivalent & Substitute Parts

Part Overview

The BSL211SP is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 20V drain-to-source voltage with 4.7A continuous drain current at 25°C. The device is packaged in a PG-TSOP6-6 (SOT-23-6 Thin) surface mount configuration and is designed for low-power switching applications requiring compact form factors.

The BSL211SP is classified as an obsolete product. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	4.7	A
On-Resistance (Rds On) @ 4.7A, 4.5V	67	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	1.2	V
Gate Charge (Qg) @ 4.5V	12.4	nC
Power Dissipation (Max)	2	W
Operating Temperature Range	-55 to 150	°C
Package Type	SOT-23-6 Thin (TSOT-23-6)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the BSL211SP is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 20V
FET Type: P-Channel only
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Package Compatibility: SOT-23-6 Thin or equivalent 6-pin surface mount packages

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must support minimum 4.7A or provide equivalent current handling for the application
On-Resistance (Rds On): Lower or equivalent values ensure compatible switching performance
Gate Charge (Qg): Values within the range of the original part maintain gate drive circuit compatibility
Power Dissipation: Thermal characteristics must be suitable for the application environment

The substitute parts listed below meet these criteria within the allowed electrical and mechanical parameters for P-Channel MOSFET devices in this voltage and current class.

Parameter Comparison

Parameter	BSL211SP (Infineon)	FDC634P (onsemi)	FDC640P (onsemi)	FDC642P (onsemi)	NTGS3443T1G (onsemi)	PMN48XP,115 (Nexperia)
Manufacturer	Infineon Technologies	onsemi	onsemi	onsemi	onsemi	Nexperia USA Inc.
Vdss (V)	20	20	20	20	20	20
Id @ 25°C (A)	4.7	3.5	4.5	4.0	2.2	4.1
Rds On @ Vgs 4.5V (mOhm)	67 @ 4.7A	80 @ 3.5A	53 @ 4.5A	65 @ 4.0A	65 @ 4.4A	55 @ 2.4A
Vgs(th) (V)	1.2 @ 25µA	1.5 @ 250µA	1.5 @ 250µA	1.5 @ 250µA	1.5 @ 250µA	1.25 @ 250µA
Qg @ 4.5V (nC)	12.4	10	13	16	15	13
Power Dissipation (W)	2 (Ta)	1.6 (Ta)	1.6 (Ta)	1.6 (Ta)	0.5 (Ta)	0.53 (Ta) / 6.25 (Tc)
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SOT-23-6 Thin (TSOT-23-6)	SOT-23-6 Thin (TSOT-23-6)	SOT-23-6 Thin (TSOT-23-6)	SOT-23-6 Thin (TSOT-23-6)	SOT-23-6 Thin (TSOT-23-6)	SC-74 / SOT-457
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

FDC640P (onsemi) is the preferred substitute for the BSL211SP. This device matches the 20V Vdss rating and provides 4.5A continuous drain current, closely approximating the original 4.7A specification. The FDC640P features a lower on-resistance of 53mOhm at 4.5A compared to the BSL211SP's 67mOhm, resulting in improved efficiency. The part is ROHS3 compliant, carries active product status with high inventory availability (172,946 pcs), and maintains the same SOT-23-6 Thin package footprint for direct PCB compatibility.

FDC642P (onsemi) provides an alternative with 4.0A continuous drain current and 65mOhm on-resistance. This substitute is suitable for applications where the current requirement does not exceed 4.0A. The device is ROHS3 compliant and active, with 65,400 pcs in stock.

Secondary Substitutes (Current-Limited Applications):

FDC634P (onsemi) is suitable only for applications where continuous drain current does not exceed 3.5A. This device offers the lowest on-resistance among onsemi options at 80mOhm but is current-limited compared to the original specification.

NTGS3443T1G (onsemi) is limited to applications requiring maximum 2.2A continuous drain current. This part features lower power dissipation (500mW) and is appropriate only for reduced-current designs.

Alternative Package Consideration:

PMN48XP,115 (Nexperia) provides 4.1A continuous drain current with superior on-resistance of 55mOhm at 2.4A. However, this device uses SC-74/SOT-457 packaging, which differs from the BSL211SP's SOT-23-6 Thin package. PCB layout modification is required for this substitute. The part is ROHS3 compliant and active with 42,400 pcs available.

Compliance and Availability:

All recommended substitutes are ROHS3 compliant and carry active product status, ensuring long-term supply chain support. The BSL211SP's RoHS non-compliant status makes transition to compliant alternatives necessary for new designs and ongoing production compliance requirements.

Frequently Asked Questions (FAQ)

Q: Can FDC640P directly replace BSL211SP without PCB modifications?

A: Yes. FDC640P uses the same SOT-23-6 Thin package as BSL211SP, enabling direct pin-for-pin substitution on existing PCBs. No layout changes are required.

Q: What is the difference between FDC640P and FDC642P?

A: FDC640P is rated for 4.5A continuous drain current with 53mOhm on-resistance, while FDC642P is rated for 4.0A with 65mOhm on-resistance. FDC640P is preferred when the application requires higher current handling or lower conduction losses.

Q: Why is PMN48XP,115 listed as a substitute if the package is different?

A: PMN48XP,115 meets the electrical specifications for P-Channel 20V MOSFET operation and provides superior on-resistance performance. However, the SC-74/SOT-457 package requires PCB redesign. This substitute is listed for applications where package change is acceptable and performance improvement is beneficial.

Q: Is NTGS3443T1G suitable for the BSL211SP application?

A: NTGS3443T1G is suitable only if the application's continuous drain current requirement does not exceed 2.2A. The device's lower power dissipation (500mW) makes it appropriate for reduced-current designs but not for applications requiring the full 4.7A capability of the original part.

Q: What does "Product Status: Obsolete" mean for BSL211SP?

A: Obsolete status indicates that Infineon has discontinued manufacturing and support for this part. Substitution with active-status alternatives is necessary to ensure continued supply availability and access to manufacturer technical support.

Q: Are all substitute parts RoHS compliant?

A: Yes. All listed substitutes are ROHS3 compliant, whereas the original BSL211SP is RoHS non-compliant. This compliance upgrade is mandatory for new designs and production transitions.

Q: Can I use FDC634P if my application only requires 3.5A?

A: Yes. FDC634P is suitable for applications with continuous drain current requirements of 3.5A or less. The device is ROHS3 compliant and active, with adequate inventory (65,100 pcs).

Q: What is the significance of on-resistance (Rds On) differences between substitutes?

A: Lower on-resistance reduces conduction losses and heat generation during operation. FDC640P (53mOhm) and PMN48XP,115 (55mOhm) provide better efficiency than BSL211SP (67mOhm), while FDC642P (65mOhm) and NTGS3443T1G (65mOhm) are comparable. Selection depends on thermal budget and efficiency requirements.

Q: Do all substitutes support the same gate voltage range as BSL211SP?

A: No. BSL211SP supports ±12V gate voltage, while FDC634P and FDC642P support ±8V. FDC640P, NTGS3443T1G, and PMN48XP,115 support ±12V. Verify gate drive circuit compatibility before selection.

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