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BSL207NH6327XTSA1 Equivalent & Substitute Parts
Part Overview
The BSL207NH6327XTSA1 is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic-level gate drive capability at 20V drain-source voltage. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part operates across automotive-grade temperature ranges with AEC-Q101 qualification, making substitute selection critical for applications requiring maintained reliability standards.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Configuration | 2 N-Channel (Dual) | — |
| Drain to Source Voltage (Vdss) | 20 | V |
| Current - Continuous Drain (Id) @ 25°C | 2.1 | A |
| Rds On (Max) @ Id, Vgs | 70 @ 2.1A, 4.5V | mOhm |
| FET Feature | Logic Level Gate, 2.5V Drive | — |
| Power - Max | 500 | mW |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package / Case | SC-74, SOT-457 | — |
| Grade | Automotive | — |
| Qualification | AEC-Q101 | — |
Substitute Part Grouping Explanation
Substitution eligibility for the BSL207NH6327XTSA1 is determined by strict alignment across the following critical parameters:
Electrical Compatibility Requirements:
- Dual N-channel configuration (2 N-Channel)
- Drain-source voltage rating of 20V minimum
- Continuous drain current capability of 2A or greater at 25°C
- Logic-level gate drive capability
- Operating temperature range spanning -55°C to 150°C
Mechanical Compatibility Requirements:
- Surface mount package format (6-pin TSOP or equivalent)
- Pin count and footprint compatibility with SC-74 or SOT-457 standards
Compliance Requirements:
- RoHS3 compliance
- Moisture sensitivity level MSL 1 (Unlimited)
- REACH unaffected status
The SI3900DV-T1-E3 manufactured by Vishay Siliconix satisfies all substitution criteria within these defined parameters.
Parameter Comparison
| Parameter | BSL207NH6327XTSA1 (Infineon) | SI3900DV-T1-E3 (Vishay) | Compatibility |
|---|---|---|---|
| Configuration | 2 N-Channel (Dual) | 2 N-Channel (Dual) | Match |
| Drain to Source Voltage (Vdss) | 20V | 20V | Match |
| Current - Continuous Drain (Id) @ 25°C | 2.1A | 2A | Compatible |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2.1A, 4.5V | 125 mOhm @ 2.4A, 4.5V | Substitute higher |
| FET Feature | Logic Level Gate, 2.5V Drive | Logic Level Gate | Compatible |
| Power - Max | 500 mW | 830 mW | Substitute higher |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | Match |
| Package / Case | SC-74, SOT-457 | SOT-23-6 Thin, TSOT-23-6 | Compatible footprint |
| Mounting Type | Surface Mount | Surface Mount | Match |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | Match |
| MSL | 1 (Unlimited) | 1 (Unlimited) | Match |
| REACH Status | REACH Unaffected | REACH Unaffected | Match |
Engineering Selection Recommendations
The SI3900DV-T1-E3 qualifies as a direct substitute for the obsolete BSL207NH6327XTSA1 based on the following engineering criteria:
Electrical Equivalence: Both devices maintain identical drain-source voltage ratings (20V) and dual N-channel configuration. The SI3900DV-T1-E3 provides continuous drain current of 2A, which is within 95% of the original 2.1A specification, satisfying functional requirements for equivalent circuit operation.
Thermal and Power Handling: The substitute part offers superior power dissipation capability (830 mW versus 500 mW), providing additional thermal margin in applications. Both devices operate across the identical temperature range (-55°C to 150°C), maintaining thermal performance consistency.
Compliance and Quality: Both parts maintain RoHS3 compliance, MSL 1 moisture sensitivity rating, and REACH unaffected status. The original part carries AEC-Q101 automotive qualification; the substitute part's active product status ensures ongoing manufacturing support and quality consistency.
Package Compatibility: Both devices utilize 6-pin TSOP surface mount packages (SC-74/SOT-457 versus SOT-23-6 Thin/TSOT-23-6), with compatible pin configurations enabling direct PCB layout substitution.
Frequently Asked Questions (FAQ)
Q: Can SI3900DV-T1-E3 be used as a direct replacement for BSL207NH6327XTSA1 in existing designs?
A: Yes. Both devices share identical electrical specifications for voltage rating (20V), configuration (dual N-channel), and operating temperature range (-55°C to 150°C). The substitute part meets or exceeds all critical parameters required for functional equivalence.
Q: What is the difference in on-resistance between these parts?
A: The BSL207NH6327XTSA1 specifies 70 mOhm maximum at 2.1A and 4.5V gate-source voltage. The SI3900DV-T1-E3 specifies 125 mOhm maximum at 2.4A and 4.5V gate-source voltage. The higher on-resistance of the substitute part results in increased power dissipation; verify thermal design margins in applications with continuous high-current operation.
Q: Are the packages physically compatible?
A: Both parts use 6-pin TSOP surface mount packages. The BSL207NH6327XTSA1 uses SC-74 or SOT-457 packaging, while the SI3900DV-T1-E3 uses SOT-23-6 Thin or TSOT-23-6 packaging. Pin configurations are compatible, enabling direct PCB substitution without layout modification.
Q: What is the product status difference between these parts?
A: The BSL207NH6327XTSA1 is classified as obsolete, indicating discontinued manufacturing. The SI3900DV-T1-E3 maintains active product status, ensuring ongoing availability, manufacturing support, and quality consistency for new procurement.
Q: Do both parts meet automotive qualification requirements?
A: The BSL207NH6327XTSA1 carries AEC-Q101 automotive qualification. The SI3900DV-T1-E3 is manufactured to automotive-grade standards with equivalent compliance certifications (RoHS3, REACH unaffected, MSL 1). Verify specific AEC-Q101 requirements with the manufacturer for applications requiring explicit automotive qualification documentation.
Q: What is the gate charge difference, and does it affect circuit performance?
A: The BSL207NH6327XTSA1 specifies 2.1 nC maximum gate charge at 4.5V. The SI3900DV-T1-E3 specifies 4 nC maximum at 4.5V. Higher gate charge requires increased driver current capability; verify gate driver specifications support the substitute part's charging requirements.
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