BSL207NH6327XTSA1 Equivalent & Substitute Parts

Part Overview

The BSL207NH6327XTSA1 is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface mount applications requiring logic-level gate drive capability at 20V drain-source voltage. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity. The part operates across automotive-grade temperature ranges with AEC-Q101 qualification, making substitute selection critical for applications requiring maintained reliability standards.

Substiute Parts

BSL207NH6327XTSA1
Infineon TechnologiesIn Stock: 1021BSL207NH6327XTSA1 Datasheet
BSL207NH6327XTSA1
Current Part
SI3900DV-T1-E3
Vishay SiliconixIn Stock: 4387SI3900DV-T1-E3 Datasheet
SI3900DV-T1-E3
MFR Recommended

Key Parameters

Parameter Value Unit
Configuration 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.1 A
Rds On (Max) @ Id, Vgs 70 @ 2.1A, 4.5V mOhm
FET Feature Logic Level Gate, 2.5V Drive
Power - Max 500 mW
Operating Temperature Range -55 to 150 °C (TJ)
Package / Case SC-74, SOT-457
Grade Automotive
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitution eligibility for the BSL207NH6327XTSA1 is determined by strict alignment across the following critical parameters:

Electrical Compatibility Requirements:

  • Dual N-channel configuration (2 N-Channel)
  • Drain-source voltage rating of 20V minimum
  • Continuous drain current capability of 2A or greater at 25°C
  • Logic-level gate drive capability
  • Operating temperature range spanning -55°C to 150°C

Mechanical Compatibility Requirements:

  • Surface mount package format (6-pin TSOP or equivalent)
  • Pin count and footprint compatibility with SC-74 or SOT-457 standards

Compliance Requirements:

  • RoHS3 compliance
  • Moisture sensitivity level MSL 1 (Unlimited)
  • REACH unaffected status

The SI3900DV-T1-E3 manufactured by Vishay Siliconix satisfies all substitution criteria within these defined parameters.

Parameter Comparison

Parameter BSL207NH6327XTSA1 (Infineon) SI3900DV-T1-E3 (Vishay) Compatibility
Configuration 2 N-Channel (Dual) 2 N-Channel (Dual) Match
Drain to Source Voltage (Vdss) 20V 20V Match
Current - Continuous Drain (Id) @ 25°C 2.1A 2A Compatible
Rds On (Max) @ Id, Vgs 70 mOhm @ 2.1A, 4.5V 125 mOhm @ 2.4A, 4.5V Substitute higher
FET Feature Logic Level Gate, 2.5V Drive Logic Level Gate Compatible
Power - Max 500 mW 830 mW Substitute higher
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) Match
Package / Case SC-74, SOT-457 SOT-23-6 Thin, TSOT-23-6 Compatible footprint
Mounting Type Surface Mount Surface Mount Match
RoHS Status ROHS3 Compliant ROHS3 Compliant Match
MSL 1 (Unlimited) 1 (Unlimited) Match
REACH Status REACH Unaffected REACH Unaffected Match

Engineering Selection Recommendations

The SI3900DV-T1-E3 qualifies as a direct substitute for the obsolete BSL207NH6327XTSA1 based on the following engineering criteria:

Electrical Equivalence: Both devices maintain identical drain-source voltage ratings (20V) and dual N-channel configuration. The SI3900DV-T1-E3 provides continuous drain current of 2A, which is within 95% of the original 2.1A specification, satisfying functional requirements for equivalent circuit operation.

Thermal and Power Handling: The substitute part offers superior power dissipation capability (830 mW versus 500 mW), providing additional thermal margin in applications. Both devices operate across the identical temperature range (-55°C to 150°C), maintaining thermal performance consistency.

Compliance and Quality: Both parts maintain RoHS3 compliance, MSL 1 moisture sensitivity rating, and REACH unaffected status. The original part carries AEC-Q101 automotive qualification; the substitute part's active product status ensures ongoing manufacturing support and quality consistency.

Package Compatibility: Both devices utilize 6-pin TSOP surface mount packages (SC-74/SOT-457 versus SOT-23-6 Thin/TSOT-23-6), with compatible pin configurations enabling direct PCB layout substitution.

Frequently Asked Questions (FAQ)

Q: Can SI3900DV-T1-E3 be used as a direct replacement for BSL207NH6327XTSA1 in existing designs?

A: Yes. Both devices share identical electrical specifications for voltage rating (20V), configuration (dual N-channel), and operating temperature range (-55°C to 150°C). The substitute part meets or exceeds all critical parameters required for functional equivalence.

Q: What is the difference in on-resistance between these parts?

A: The BSL207NH6327XTSA1 specifies 70 mOhm maximum at 2.1A and 4.5V gate-source voltage. The SI3900DV-T1-E3 specifies 125 mOhm maximum at 2.4A and 4.5V gate-source voltage. The higher on-resistance of the substitute part results in increased power dissipation; verify thermal design margins in applications with continuous high-current operation.

Q: Are the packages physically compatible?

A: Both parts use 6-pin TSOP surface mount packages. The BSL207NH6327XTSA1 uses SC-74 or SOT-457 packaging, while the SI3900DV-T1-E3 uses SOT-23-6 Thin or TSOT-23-6 packaging. Pin configurations are compatible, enabling direct PCB substitution without layout modification.

Q: What is the product status difference between these parts?

A: The BSL207NH6327XTSA1 is classified as obsolete, indicating discontinued manufacturing. The SI3900DV-T1-E3 maintains active product status, ensuring ongoing availability, manufacturing support, and quality consistency for new procurement.

Q: Do both parts meet automotive qualification requirements?

A: The BSL207NH6327XTSA1 carries AEC-Q101 automotive qualification. The SI3900DV-T1-E3 is manufactured to automotive-grade standards with equivalent compliance certifications (RoHS3, REACH unaffected, MSL 1). Verify specific AEC-Q101 requirements with the manufacturer for applications requiring explicit automotive qualification documentation.

Q: What is the gate charge difference, and does it affect circuit performance?

A: The BSL207NH6327XTSA1 specifies 2.1 nC maximum gate charge at 4.5V. The SI3900DV-T1-E3 specifies 4 nC maximum at 4.5V. Higher gate charge requires increased driver current capability; verify gate driver specifications support the substitute part's charging requirements.

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