BSH105,215 N-Channel MOSFET 20V 1.05A Equivalent & Substitute Parts

Part Overview

The BSH105,215 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 20V drain-to-source voltage with 1.05A continuous drain current at 25°C. The device is housed in a TO-236AB (SOT-23-3) surface mount package and dissipates a maximum of 417mW. This part carries a "Not For New Designs" product status, indicating that alternative components should be evaluated for new circuit implementations. Identifying equivalent and substitute parts is necessary to ensure design continuity, improve component availability, and optimize performance characteristics for specific application requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	1.05	A
Rds On (Max) @ 600mA, 4.5V	200	mOhm
Gate Charge (Qg) @ 4.5V	3.9	nC
Power Dissipation (Max)	417	mW
Operating Temperature Range	-55 to 150	°C
Package / Case	TO-236-3, SC-59, SOT-23-3	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the BSH105,215 is determined by the following critical parameters:

Mandatory Matching Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 20V minimum
Package / Case: TO-236-3, SC-59, or SOT-23-3 (surface mount compatibility)
Operating Temperature Range: -55°C to 150°C (TJ)
RoHS3 Compliance and MSL Level 1

Performance Consideration Parameters:

Continuous Drain Current (Id) @ 25°C: 1.05A or higher
Rds On (Max): 200mOhm or lower (at comparable test conditions)
Gate Charge (Qg): 3.9nC or lower (for switching speed considerations)
Power Dissipation (Max): 417mW or higher

Substitute parts may exceed the original specifications in drain current, power dissipation, or gate charge without compromising circuit function. Parts with lower Rds On values provide improved efficiency. All substitute parts listed maintain identical voltage ratings, temperature ranges, and package compatibility.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 4.5V (nC)	Power Diss. Max (mW)	Package	Product Status
BSH105,215	Nexperia USA Inc.	20	1.05	200	3.9	417	TO-236AB	Not For New Designs
BSH105,235	Nexperia USA Inc.	20	1.05	200	3.9	417	TO-236AB	Not For New Designs
BSS214NH6327XTSA1	Infineon Technologies	20	1.5	140	0.8	500	PG-SOT23	Active
NDS331N	onsemi	20	1.3	160	5	500	SOT-23-3	Active
NTR4501NT1G	onsemi	20	3.2	80	6	1250	SOT-23-3	Active
PJA3430_R1_00001	Panjit International Inc.	20	2	150	1.8	1250	SOT-23	Active
ZXM61N02FTA	Diodes Incorporated	20	1.7	180	3.4	625	SOT-23-3	Active
ZXM61N02FTC	Diodes Incorporated	20	1.7	180	3.4	625	SOT-23-3	Active

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

BSH105,235 is a parametric equivalent to BSH105,215, offering identical electrical specifications and package configuration. Both parts carry "Not For New Designs" status from Nexperia USA Inc. This substitute provides direct form-fit-function compatibility with no circuit modifications required.

Active Status Alternatives (Recommended for New Designs):

All remaining substitute parts carry "Active" product status, making them suitable for new circuit implementations. Selection among these alternatives depends on application-specific requirements:

BSS214NH6327XTSA1 (Infineon OptiMOS™ series): Offers improved Rds On (140mOhm) and reduced gate charge (0.8nC), providing superior switching efficiency and lower power dissipation compared to the original part.
ZXM61N02FTA / ZXM61N02FTC (Diodes Incorporated): Provide moderate current capability (1.7A) with Rds On of 180mOhm and gate charge of 3.4nC. Both variants maintain compatibility with the original specifications while offering active product support.
NDS331N (onsemi): Delivers 1.3A continuous current with 160mOhm Rds On, suitable for applications requiring slightly higher current handling than the original part.
NTR4501NT1G (onsemi): Rated for 3.2A continuous current with significantly lower Rds On (80mOhm), appropriate for high-current applications where thermal management and efficiency are critical.
PJA3430_R1_00001 (Panjit International Inc.): Supports 2A continuous current with 150mOhm Rds On and minimal gate charge (1.8nC), offering balanced performance for moderate-current applications.

All substitute parts comply with RoHS3 requirements and maintain MSL Level 1 (Unlimited) moisture sensitivity ratings, ensuring compatibility with standard manufacturing and storage practices.

Frequently Asked Questions (FAQ)

Q: Can BSH105,235 be used as a direct replacement for BSH105,215?

A: Yes. BSH105,235 is a parametric equivalent with identical electrical specifications, voltage rating, current rating, Rds On, gate charge, power dissipation, and package configuration. No circuit modifications are required.

Q: Why should new designs avoid the BSH105,215?

A: The BSH105,215 carries a "Not For New Designs" product status from Nexperia USA Inc., indicating that the manufacturer recommends alternative components for new circuit implementations. Active-status alternatives provide ongoing manufacturer support and supply continuity.

Q: What is the primary difference between the substitute parts listed?

A: Substitute parts vary in continuous drain current rating (1.05A to 3.2A), Rds On values (80mOhm to 200mOhm), gate charge (0.8nC to 6nC), and maximum power dissipation (417mW to 1250mW). These differences allow selection based on specific application current and thermal requirements.

Q: Are all substitute parts compatible with the original TO-236AB package footprint?

A: All substitute parts use SOT-23-3 or equivalent surface mount packages (TO-236-3, SC-59, SOT-23-3), which share identical pin configurations and PCB footprints. Direct board-level substitution is possible without layout modifications.

Q: What does Rds On (on-resistance) represent, and why does it matter for substitution?

A: Rds On is the drain-to-source resistance when the MOSFET is fully conducting. Lower Rds On values reduce power dissipation and heat generation during operation. Substitute parts with lower Rds On values improve circuit efficiency and thermal performance.

Q: Can a substitute part with higher current rating be used in place of the BSH105,215?

A: Yes. A substitute part with higher continuous drain current (such as NTR4501NT1G at 3.2A) can be used in applications designed for 1.05A operation. The higher rating provides additional design margin and does not compromise circuit function.

Q: What is gate charge (Qg), and how does it affect circuit performance?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge values enable faster switching transitions and reduce driver power requirements. Substitute parts with lower Qg values improve switching speed and reduce switching losses.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed carry RoHS3 compliance certification, meeting environmental and hazardous substance restrictions for electronic components.

Q: What is MSL Level 1, and why is it important?

A: MSL (Moisture Sensitivity Level) 1 indicates unlimited shelf life without moisture-related degradation. All substitute parts maintain MSL Level 1 rating, ensuring compatibility with standard storage and handling practices without special moisture-control requirements.

Q: Which substitute part offers the best efficiency for low-power applications?

A: BSS214NH6327XTSA1 provides the lowest gate charge (0.8nC) and reduced Rds On (140mOhm), making it optimal for applications prioritizing switching efficiency and minimal power dissipation.

Q: Can ZXM61N02FTA and ZXM61N02FTC be used interchangeably?

A: Yes. Both parts are identical in electrical specifications and differ only in packaging format: ZXM61N02FTA is supplied in Cut Tape (CT) & Digi-Reel® format, while ZXM61N02FTC is supplied in Tape & Reel (TR) format. Selection depends on procurement and assembly requirements.

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