BSC205N10LS G N-Channel MOSFET 100V 7.4A/45A Equivalent & Substitute Parts

Part Overview

The BSC205N10LS G is an N-Channel MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ series. This device is rated for 100V drain-to-source voltage with continuous drain current of 7.4A at 25°C ambient temperature and 45A at case temperature. The component is housed in a PG-TDSON-8-1 package (8-PowerTDFN) for surface mount applications.

The BSC205N10LS G is classified as Obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Ta)	7.4	A
Continuous Drain Current @ Case Temp (Tc)	45	A
On-Resistance (Rds On) @ 45A, 10V	20.5	mOhm
Gate Threshold Voltage (Vgs th) @ 43µA	2.4	V
Gate Charge (Qg) @ 10V	41	nC
Input Capacitance (Ciss) @ 50V	2900	pF
Power Dissipation (Tc)	76	W
Operating Temperature Range	-55 to 150	°C
Package Type	PG-TDSON-8-1 (8-PowerTDFN)	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the BSC205N10LS G are selected based on strict electrical and mechanical compatibility criteria. The following parameters determine substitution eligibility:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Continuous Drain Current (Tc): Must support minimum 45A at case temperature
On-Resistance (Rds On): Must not exceed 20.5 mOhm at rated conditions
Operating Temperature Range: Must support -55°C to 150°C minimum
Mounting Type: Surface Mount

Secondary Compatibility Factors:

Package footprint compatibility (PG-TDSON-8-1 or equivalent land pattern)
Gate Charge (Qg) and Input Capacitance (Ciss) for circuit performance
Power Dissipation capability (76W minimum at Tc)
Vgs(th) threshold voltage range for gate drive compatibility

Substitute parts are grouped into two categories: Direct Package Equivalents (same PG-TDSON-8-1 package) and Functional Equivalents (alternative packages with compatible electrical performance).

Parameter Comparison

Parameter	BSC205N10LS G	BSC196N10NSGATMA1	FDMS3662	FDMS3672	PSMN020-100YS,115	STL40N10F7	STL60N10F7
Manufacturer	Infineon	Infineon	onsemi	onsemi	Nexperia	STMicroelectronics	STMicroelectronics
Vdss (V)	100	100	100	100	100	100	100
Id @ 25°C Ta (A)	7.4	8.5	8.9	7.4	—	—	—
Id @ Tc (A)	45	45	49	22	43	40	46
Rds On (mOhm)	20.5 @ 45A, 10V	19.6 @ 45A, 10V	14.8 @ 8.9A, 10V	23 @ 7.4A, 10V	20.5 @ 15A, 10V	24 @ 10A, 10V	18 @ 6A, 10V
Vgs(th) (V)	2.4 @ 43µA	4 @ 42µA	4.5 @ 250µA	4 @ 250µA	4 @ 1mA	4.5 @ 250µA	4.5 @ 250µA
Qg (nC)	41 @ 10V	34 @ 10V	75 @ 10V	44 @ 10V	41 @ 10V	19 @ 10V	25 @ 10V
Ciss (pF)	2900 @ 50V	2300 @ 50V	4620 @ 50V	2680 @ 50V	2210 @ 50V	1270 @ 50V	1640 @ 50V
Power Dissipation Tc (W)	76	78	104	78	106	70	72
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175	-55 to 175	-55 to 175
Package	PG-TDSON-8-1	PG-TDSON-8-1	8-PQFN (5x6)	8-MLP (5x6)	LFPAK56	PowerFlat™ (5x6)	PowerFlat™ (5x6)
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Package Equivalent (Recommended Primary Substitute):

The BSC196N10NSGATMA1 is the recommended primary substitute for the BSC205N10LS G. Both devices share the identical PG-TDSON-8-1 package, enabling direct PCB footprint compatibility without layout modifications. The BSC196N10NSGATMA1 is manufactured by Infineon Technologies (same manufacturer as the original part) and maintains the OptiMOS™ series lineage. This part is Active in product status with ROHS3 compliance, ensuring long-term availability and regulatory compliance. Electrical parameters are closely matched: Vdss is 100V, Id(Tc) is 45A, and Rds On is 19.6 mOhm at 45A/10V, which is superior to the original 20.5 mOhm specification. Gate charge is reduced to 34 nC, improving switching efficiency. Operating temperature range is -55°C to 150°C, matching the original specification.

Alternative Functional Equivalents (Package Change Required):

For applications where package change is acceptable, the following alternatives provide enhanced performance or availability:

STL60N10F7 (STMicroelectronics): Offers the lowest on-resistance at 18 mOhm and highest continuous drain current at 46A (Tc). Extended operating temperature to 175°C. PowerFlat™ (5x6) package requires PCB layout modification. Active product status with ROHS3 compliance.

PSMN020-100YS,115 (Nexperia): Provides 43A continuous drain current with 20.5 mOhm on-resistance matching the original specification. LFPAK56 package (Power-SO8) requires layout change. Extended operating temperature to 175°C. Highest inventory availability (139,619 pcs). Active product status with ROHS3 compliance.

FDMS3662 (onsemi): Delivers superior performance with 49A continuous drain current and 14.8 mOhm on-resistance. 8-PQFN (5x6) package requires layout modification. Active product status with ROHS3 compliance.

STL40N10F7 (STMicroelectronics): Suitable for applications with lower current requirements (40A Tc). 24 mOhm on-resistance. PowerFlat™ (5x6) package. Extended operating temperature to 175°C. Active product status with ROHS3 compliance.

FDMS3672 (onsemi): Matches the original 7.4A ambient temperature rating and 22A case temperature rating. 23 mOhm on-resistance. 8-MLP (5x6) package. Active product status with ROHS3 compliance.

All substitute parts are REACH Unaffected and classified as EAR99 for export control purposes, matching the original part's regulatory classification.

Frequently Asked Questions (FAQ)

Q1: Can I use BSC196N10NSGATMA1 as a direct replacement for BSC205N10LS G without PCB modifications?

A: Yes. The BSC196N10NSGATMA1 uses the identical PG-TDSON-8-1 package footprint, enabling direct PCB substitution without layout changes. Electrical performance is equivalent or superior across all critical parameters.

Q2: What is the key difference between the direct package equivalent and functional alternatives?

A: The BSC196N10NSGATMA1 maintains the same PG-TDSON-8-1 package, requiring no PCB layout modifications. Functional alternatives (STL60N10F7, PSMN020-100YS,115, FDMS3662, STL40N10F7, FDMS3672) use different packages (PowerFlat™, LFPAK56, 8-PQFN, 8-MLP) and require PCB redesign but may offer improved electrical performance or extended temperature ratings.

Q3: Which substitute part offers the best on-resistance performance?

A: The FDMS3662 provides the lowest on-resistance at 14.8 mOhm, reducing conduction losses. However, this part uses an 8-PQFN (5x6) package requiring PCB layout modification and has higher gate charge (75 nC) compared to the original 41 nC.

Q4: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 Compliant. The original BSC205N10LS G does not specify RoHS status, but all active alternatives meet current RoHS3 requirements.

Q5: What is the operating temperature difference between the original part and substitutes?

A: The BSC205N10LS G operates from -55°C to 150°C. The STL60N10F7, STL40N10F7, and PSMN020-100YS,115 extend the upper limit to 175°C, providing 25°C additional thermal margin. The BSC196N10NSGATMA1, FDMS3662, and FDMS3672 maintain the -55°C to 150°C range.

Q6: Can I substitute a part with lower continuous drain current rating?

A: No. The FDMS3672 has a case temperature drain current of only 22A, which is below the original 45A specification. This part is unsuitable for applications requiring the full 45A continuous current capability.

Q7: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. Lower gate charge reduces switching losses and allows faster switching. The BSC196N10NSGATMA1 (34 nC) and STL60N10F7 (25 nC) offer improved switching efficiency compared to the original 41 nC. Higher gate charge (FDMS3662 at 75 nC) increases switching losses and may require stronger gate drive circuits.

Q8: What is the significance of input capacitance (Ciss)?

A: Input capacitance affects gate drive requirements and switching speed. Lower Ciss reduces gate drive current demand and improves switching performance. The STL60N10F7 (1640 pF) and STL40N10F7 (1270 pF) offer significantly lower Ciss than the original 2900 pF, improving circuit efficiency.

Q9: Which substitute has the highest inventory availability?

A: The PSMN020-100YS,115 has the highest inventory at 139,619 pcs. The BSC196N10NSGATMA1 has 53,999 pcs available. Both ensure supply chain continuity.

Q10: Are all substitute parts suitable for the same gate drive voltage?

A: All parts operate with ±20V maximum gate-source voltage (FDMS86163P specifies ±25V, but this is a P-Channel part not applicable here). Gate threshold voltages vary: the original BSC205N10LS G has 2.4V, while substitutes range from 4V to 4.5V. Verify gate drive circuit compatibility with the selected threshold voltage.

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