Equivalent & Substitute Parts for BSC159N10LSFGATMA1

Part Overview

The BSC159N10LSFGATMA1 is an N-Channel 100V MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ series. This device is rated for 9.4A continuous drain current at 25°C (Ta) and 63A at case temperature (Tc), with a maximum power dissipation of 114W. The component is housed in a PG-TDSON-8-1 package (8-PowerTDFN) and is designed for surface mount applications.

The BSC159N10LSFGATMA1 is classified as obsolete. Due to its discontinued status, equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements. Substitute devices must maintain electrical compatibility across critical parameters including drain-source voltage rating, continuous drain current capability, on-resistance characteristics, and thermal performance.

Substiute Parts

BSC159N10LSFGATMA1
Infineon TechnologiesIn Stock: 1061BSC159N10LSFGATMA1 Datasheet
BSC159N10LSFGATMA1
Current Part
BSC146N10LS5ATMA1
Infineon TechnologiesIn Stock: 18460BSC146N10LS5ATMA1 Datasheet
BSC146N10LS5ATMA1
MFR Recommended
BSC123N10LSGATMA1
Infineon TechnologiesIn Stock: 2574BSC123N10LSGATMA1 Datasheet
BSC123N10LSGATMA1
MFR Recommended
AON6450L
Alpha & Omega Semiconductor Inc.In Stock: 18179AON6450L Datasheet
AON6450L
MFR Recommended
CSD19534Q5A
Texas InstrumentsIn Stock: 23266CSD19534Q5A Datasheet
CSD19534Q5A
MFR Recommended
CSD19534Q5AT
Texas InstrumentsIn Stock: 1250CSD19534Q5AT Datasheet
CSD19534Q5AT
MFR Recommended
FDMS3662
onsemiIn Stock: 2719FDMS3662 Datasheet
FDMS3662
MFR Recommended
FDMS3672
onsemiIn Stock: 10259FDMS3672 Datasheet
FDMS3672
MFR Recommended
STL60N10F7
STMicroelectronicsIn Stock: 34997STL60N10F7 Datasheet
STL60N10F7
MFR Recommended
STL90N10F7
STMicroelectronicsIn Stock: 43586STL90N10F7 Datasheet
STL90N10F7
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current @ 25°C (Ta) 9.4 A
Continuous Drain Current @ Case Temp (Tc) 63 A
Rds On (Max) @ 50A, 10V 15.9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 72µA 2.4 V
Gate Charge (Qg) @ 10V 35 nC
Input Capacitance (Ciss) @ 50V 2500 pF
Power Dissipation (Max) @ Tc 114 W
Operating Temperature Range -55 to 150 °C
Package Type PG-TDSON-8-1 (8-PowerTDFN)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BSC159N10LSFGATMA1 is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-Source Voltage (Vdss): Must equal 100V
  • Continuous Drain Current (Tc): Must support minimum 63A at case temperature
  • On-Resistance (Rds On): Must not exceed 15.9mOhm at specified test conditions
  • Gate Threshold Voltage: Must fall within acceptable switching range (2.3V to 2.4V)
  • Power Dissipation: Must support minimum 114W at case temperature

Mechanical & Packaging Criteria:

  • Mounting Type: Surface Mount only
  • Package Family: 8-pin power packages (TDSON, VSON, DFN, MLP, PowerFlat variants acceptable)
  • Pin Configuration: Must maintain electrical node compatibility
  • Thermal Performance: Case temperature rating must support 150°C minimum junction temperature

Compliance Criteria:

  • RoHS3 Compliance: Required
  • Moisture Sensitivity Level: MSL 1 preferred
  • Operating Temperature: Minimum -55°C to 150°C range

Substitute parts are grouped into two categories: Infineon OptiMOS™ Series (direct technology family) and Cross-Manufacturer Alternatives (equivalent electrical performance from other manufacturers).

Parameter Comparison

Parameter BSC159N10LSFGATMA1 BSC146N10LS5ATMA1 BSC123N10LSGATMA1 CSD19534Q5A STL60N10F7 STL90N10F7 FDMS3662
Manufacturer Infineon Infineon Infineon Texas Instruments STMicroelectronics STMicroelectronics onsemi
Vdss (V) 100 100 100 100 100 100 100
Id (Tc) (A) 63 44 71 44 46 70 49
Rds On (Max) (mOhm) 15.9 @ 50A, 10V 14.6 @ 22A, 10V 12.3 @ 50A, 10V 15.1 @ 10A, 10V 18 @ 6A, 10V 10.5 @ 8A, 10V 14.8 @ 8.9A, 10V
Vgs(th) (V) 2.4 @ 72µA 2.3 @ 23µA 2.4 @ 72µA 3.4 @ 250µA 4.5 @ 250µA 4 @ 250µA 4.5 @ 250µA
Qg (nC) 35 @ 10V 10 @ 4.5V 68 @ 10V 22 @ 10V 25 @ 10V 39 @ 10V 75 @ 10V
Ciss (pF) 2500 @ 50V 1300 @ 50V 4900 @ 50V 1680 @ 50V 1640 @ 50V 3550 @ 50V 4620 @ 50V
Pd (Max) (W) 114 (Tc) 52 (Tc) 114 (Tc) 63 (Tc) 72 (Tc) 100 (Tc) 104 (Tc)
Operating Temp (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 175 -55 to 175 -55 to 150
Package PG-TDSON-8-1 PG-TDSON-8-6 PG-TDSON-8-1 8-VSONP (5x6) PowerFlat™ (5x6) PowerFlat™ (5x6) 8-PQFN (5x6)
Product Status Obsolete Active Active Active Active Active Active
RoHS3 Compliant Yes Yes Yes Yes Yes Yes Yes

Engineering Selection Recommendations

Primary Substitutes (Infineon OptiMOS™ Series):

The BSC123N10LSGATMA1 provides the closest electrical equivalence to the BSC159N10LSFGATMA1. Both devices share identical package type (PG-TDSON-8-1), matching gate threshold voltage (2.4V @ 72µA), and equivalent power dissipation rating (114W at Tc). The BSC123N10LSGATMA1 delivers 71A continuous drain current at case temperature, exceeding the original 63A specification. This device is currently in active production status with 2560 units in stock inventory.

The BSC146N10LS5ATMA1 offers an alternative within the Infineon product family, featuring improved on-resistance (14.6mOhm) and reduced gate charge (10nC). However, this device uses a different package variant (PG-TDSON-8-6) and delivers lower continuous drain current (44A at Tc). Selection of this part requires PCB layout modification to accommodate the alternate package footprint.

Secondary Substitutes (Cross-Manufacturer Alternatives):

The STL60N10F7 (STMicroelectronics) and STL90N10F7 (STMicroelectronics) are qualified alternatives meeting the 100V Vdss and surface mount requirements. The STL90N10F7 provides superior current handling (70A at Tc) and lower on-resistance (10.5mOhm), with extended operating temperature range to 175°C. Both STMicroelectronics devices use PowerFlat™ package variants compatible with 5x6mm footprints.

The CSD19534Q5A (Texas Instruments NexFET™ series) and FDMS3662 (onsemi PowerTrench®) provide functional equivalence with 44A and 49A continuous drain current ratings respectively. These devices maintain 100V Vdss rating and support thermal performance within acceptable limits. Package variants differ from the original (8-VSONP and 8-PQFN respectively), requiring footprint verification.

Compliance & Availability:

All recommended substitutes maintain ROHS3 compliance and MSL 1 moisture sensitivity rating. All devices operate within the -55°C to 150°C temperature range (STMicroelectronics variants extend to 175°C). Current inventory levels support immediate procurement: BSC123N10LSGATMA1 (2560 pcs), STL60N10F7 (34934 pcs), STL90N10F7 (43510 pcs), and CSD19534Q5A (23200 pcs).

Frequently Asked Questions (FAQ)

Q: Can BSC146N10LS5ATMA1 be used as a direct replacement without PCB modification?

A: No. While electrically compatible, the BSC146N10LS5ATMA1 uses package variant PG-TDSON-8-6 versus the original PG-TDSON-8-1. PCB footprint modification is required. The BSC123N10LSGATMA1 maintains identical package type and requires no layout changes.

Q: What is the primary difference between Infineon and cross-manufacturer substitutes?

A: Infineon OptiMOS™ series substitutes (BSC123N10LSGATMA1, BSC146N10LS5ATMA1) maintain identical gate threshold voltage (2.4V) and package family consistency. Cross-manufacturer alternatives (STMicroelectronics, Texas Instruments, onsemi) offer equivalent electrical performance but use different package variants and may have different gate threshold specifications (3.4V to 4.5V), affecting gate drive circuit design.

Q: Is the STL90N10F7 suitable for applications requiring maximum current handling?

A: Yes. The STL90N10F7 delivers 70A continuous drain current at case temperature, exceeding the original 63A specification by 11%. It also provides superior on-resistance (10.5mOhm) and extended operating temperature to 175°C. Package footprint compatibility must be verified as it uses PowerFlat™ (5x6) versus the original TDSON variant.

Q: What are the thermal implications of selecting a substitute with lower power dissipation rating?

A: Devices with lower Pd ratings (such as BSC146N10LS5ATMA1 at 52W Tc) may require enhanced thermal management in high-power applications. The original BSC159N10LSFGATMA1 and BSC123N10LSGATMA1 both support 114W dissipation. For applications approaching maximum power levels, select substitutes with Pd ratings of 100W or higher.

Q: Are all substitutes compatible with existing gate drive circuits?

A: Gate threshold voltage differences require evaluation. The original device and BSC123N10LSGATMA1 both specify 2.4V @ 72µA. Cross-manufacturer alternatives specify higher thresholds (3.4V to 4.5V @ 250µA), potentially requiring gate drive voltage adjustment. Verify gate drive circuit specifications before substitution.

Q: What packaging considerations apply when selecting cross-manufacturer alternatives?

A: All recommended substitutes use 8-pin power packages with 5x6mm footprints. However, specific package variants differ: TDSON, VSON, DFN, PQFN, MLP, and PowerFlat. Pin assignments and thermal pad configurations vary. Consult detailed package drawings and verify PCB compatibility before design implementation.

Q: Which substitute offers the best on-resistance performance?

A: The STL90N10F7 provides the lowest on-resistance at 10.5mOhm @ 8A, 10V. The BSC123N10LSGATMA1 follows at 12.3mOhm @ 50A, 10V. Lower on-resistance reduces power dissipation in high-current applications and improves overall circuit efficiency.

Q: Can substitutes be mixed within a single design?

A: Not recommended. Mixing different device types within parallel or redundant configurations may result in unequal current distribution due to on-resistance variations. Maintain device consistency across all instances in a given circuit topology.

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