BSC080P03LSGAUMA1 Equivalent & Substitute Parts

Part Overview

The BSC080P03LSGAUMA1 is a P-Channel 30V MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is rated for 16A continuous drain current (Ta) and 30A (Tc) with a maximum on-resistance of 8mOhm at 30A, 10V gate-source voltage. The part is housed in a PG-TDSON-8-3 surface mount package and is compliant with RoHS3 and REACH regulations.

The BSC080P03LSGAUMA1 carries a product status of "Not For New Designs," indicating that Infineon has discontinued this component for new applications. This status necessitates identification of functionally equivalent alternatives that meet the same electrical and mechanical requirements for ongoing production support and design flexibility.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 30A (Tc)	A
Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V	mOhm
Vgs(th) (Max) @ Id	2.2V @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	122.4 nC @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	6140 pF @ 15V	pF
Power Dissipation (Max)	2.5W (Ta), 89W (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-PowerVDFN (PG-TDSON-8-3)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	3 (168 Hours)	—

Substitute Part Grouping Explanation

Substitution of the BSC080P03LSGAUMA1 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: P-Channel topology
Drain to Source Voltage (Vdss): Minimum 30V rating
Continuous Drain Current (Id): Minimum 16A at Ta or equivalent thermal condition
On-Resistance (Rds On): Maximum 8mOhm or lower at specified gate-source voltage
Gate Threshold Voltage (Vgs(th)): Maximum 2.2V at 250µA
Operating Temperature Range: -55°C to 150°C (TJ)
Mounting Type: Surface Mount
Compliance: RoHS3 and REACH compliant

Secondary Compatibility Parameters:

Gate Charge (Qg): Approximately 122.4 nC at 10V
Input Capacitance (Ciss): Approximately 6140 pF at 15V
Power Dissipation capability: Minimum 2.5W (Ta)

The four substitute parts listed below satisfy these criteria with variations in package type, current rating, and thermal performance. All substitutes maintain P-Channel topology, 30V Vdss rating, and surface mount configuration. Package differences (DPAK, PowerDI5060-8, 8-PQFN) represent mechanical alternatives suitable for PCB layout adaptation.

Parameter Comparison

Parameter	BSC080P03LSGAUMA1	DMP3010LPSQ-13	DMP3012LPS-13	FDMS6673BZ	IRFR5505TRPBF
Manufacturer	Infineon	Diodes Inc.	Diodes Inc.	onsemi	Infineon
FET Type	P-Channel	P-Channel	P-Channel	P-Channel	P-Channel
Vdss (V)	30	30	30	30	55
Id @ 25°C (A)	16 (Ta), 30 (Tc)	36 (Ta)	13.2 (Ta)	15.2 (Ta), 28 (Tc)	18 (Tc)
Rds On (Max) @ 10V (mOhm)	8 @ 30A	7.5 @ 10A	9 @ 10A	6.8 @ 15.2A	110 @ 9.6A
Vgs(th) (Max) @ 250µA (V)	2.2	2.1	2.1	3.0	4.0
Qg (Max) @ 10V (nC)	122.4	126.2	139	130	32
Ciss (Max) @ 15V (pF)	6140	6234	6807	5915	650
Power Dissipation (Max) (W)	2.5 (Ta), 89 (Tc)	2.18 (Ta)	1.29 (Ta)	2.5 (Ta), 73 (Tc)	57 (Tc)
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	8-PowerVDFN (PG-TDSON-8-3)	8-PowerTDFN (PowerDI5060-8)	8-PowerTDFN (PowerDI5060-8)	8-PowerTDFN (8-PQFN 5x6)	TO-252-3 DPAK
Product Status	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	3 (168 Hours)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

DMP3010LPSQ-13 (Diodes Incorporated)

The DMP3010LPSQ-13 is the closest electrical equivalent to the BSC080P03LSGAUMA1. It maintains identical 30V Vdss rating and provides superior continuous drain current (36A Ta vs. 16A Ta). On-resistance is 7.5mOhm at 10A, 10V, which is lower than the BSC080P03LSGAUMA1 at 8mOhm at 30A. Gate threshold voltage is 2.1V, matching the original specification. The part is in Active product status with unlimited MSL rating (1), providing superior supply chain stability compared to the discontinued BSC080P03LSGAUMA1. Package is PowerDI5060-8 (8-PowerTDFN), requiring PCB layout modification from the original PG-TDSON-8-3. RoHS3 and REACH compliant.

FDMS6673BZ (onsemi)

The FDMS6673BZ offers equivalent 30V Vdss and provides 15.2A (Ta) / 28A (Tc) continuous drain current. On-resistance is 6.8mOhm at 15.2A, 10V, superior to the original part. Gate threshold voltage is 3.0V, which is higher than the BSC080P03LSGAUMA1 specification of 2.2V. This part is in Active product status with MSL 1 (Unlimited). Package is 8-PQFN (5x6), requiring significant PCB layout redesign. RoHS3 and REACH compliant. Gate charge and input capacitance are comparable to the original.

DMP3012LPS-13 (Diodes Incorporated)

The DMP3012LPS-13 maintains 30V Vdss but provides lower continuous drain current (13.2A Ta) compared to the BSC080P03LSGAUMA1 (16A Ta). This part is suitable only for applications where current requirements do not exceed 13.2A. On-resistance is 9mOhm at 10A, 10V. Gate threshold voltage is 2.1V. Product status is Active with MSL 1 (Unlimited). Package is PowerDI5060-8 (8-PowerTDFN). RoHS3 and REACH compliant.

IRFR5505TRPBF (Infineon)

The IRFR5505TRPBF is a higher voltage alternative with 55V Vdss rating, providing overvoltage margin beyond the 30V requirement. Continuous drain current is 18A (Tc), meeting the 16A (Ta) minimum. However, on-resistance is significantly higher at 110mOhm at 9.6A, 10V, compared to 8mOhm of the original part. Gate threshold voltage is 4.0V, substantially higher than the 2.2V specification. This part is in Active product status with MSL 1 (Unlimited). Package is TO-252-3 DPAK (2 Leads + Tab), a larger footprint requiring significant PCB redesign. RoHS3 and REACH compliant. This part is suitable only for applications where higher voltage rating and larger package footprint are acceptable trade-offs for higher on-resistance.

Frequently Asked Questions (FAQ)

Q: Can the DMP3010LPSQ-13 directly replace the BSC080P03LSGAUMA1 without circuit modification?

A: Electrical substitution is valid. The DMP3010LPSQ-13 meets all primary electrical criteria: 30V Vdss, 36A continuous drain current (exceeds 16A requirement), 7.5mOhm on-resistance (lower than 8mOhm), and 2.1V gate threshold voltage (within 2.2V specification). However, the package differs (PowerDI5060-8 vs. PG-TDSON-8-3), requiring PCB layout modification. Gate charge (126.2 nC) and input capacitance (6234 pF) are comparable to the original, so gate drive circuitry typically requires no adjustment.

Q: Why does the IRFR5505TRPBF have such high on-resistance compared to other substitutes?

A: The IRFR5505TRPBF is rated for 55V Vdss, which is 25V higher than the BSC080P03LSGAUMA1 (30V Vdss). Higher voltage-rated MOSFETs inherently exhibit higher on-resistance due to thicker drift regions in the semiconductor structure. The 110mOhm on-resistance at 9.6A reflects this voltage class trade-off. This part is suitable only for applications where the higher voltage rating provides system-level benefit that justifies the increased conduction losses.

Q: What is the impact of the higher gate threshold voltage (Vgs(th)) in the FDMS6673BZ?

A: The FDMS6673BZ has a gate threshold voltage of 3.0V compared to the BSC080P03LSGAUMA1 specification of 2.2V. This 0.8V difference means the FDMS6673BZ requires a higher gate-source voltage to reach the same conduction state. For gate drive circuits designed for the original 2.2V threshold, the FDMS6673BZ will conduct at a higher gate voltage, potentially affecting switching speed and drive current requirements. Gate drive circuits must be evaluated for compatibility with the higher threshold voltage.

Q: Are all substitute parts compatible with the original PCB layout?

A: No. The BSC080P03LSGAUMA1 uses PG-TDSON-8-3 package. DMP3010LPSQ-13 and DMP3012LPS-13 use PowerDI5060-8 (8-PowerTDFN), and FDMS6673BZ uses 8-PQFN (5x6). IRFR5505TRPBF uses TO-252-3 DPAK. All four substitutes require PCB footprint redesign. Thermal vias and copper area distribution may differ between packages, affecting thermal performance.

Q: Which substitute part has the best thermal performance?

A: The FDMS6673BZ provides the lowest on-resistance (6.8mOhm at 15.2A, 10V) and highest thermal dissipation capability (73W Tc), resulting in the lowest conduction losses and best thermal performance. The DMP3010LPSQ-13 is the second choice with 7.5mOhm on-resistance and 2.18W (Ta) power dissipation. The IRFR5505TRPBF has 57W (Tc) dissipation but the 110mOhm on-resistance generates significantly higher conduction losses in typical operating conditions.

Q: What is the significance of MSL (Moisture Sensitivity Level) differences?

A: The BSC080P03LSGAUMA1 has MSL 3 (168 Hours), requiring controlled storage and handling within 168 hours of package opening. All four substitute parts have MSL 1 (Unlimited), meaning they can be stored and handled without time-based moisture exposure restrictions. This provides superior supply chain flexibility and reduces risk of moisture-induced failures during assembly.

Q: Can gate drive circuitry designed for the BSC080P03LSGAUMA1 be used with all substitutes?

A: Gate drive compatibility depends on gate charge (Qg) and gate threshold voltage (Vgs(th)). The DMP3010LPSQ-13 and DMP3012LPS-13 have comparable gate charge (126.2 nC and 139 nC vs. 122.4 nC) and lower threshold voltage (2.1V vs. 2.2V), making them compatible with existing gate drive circuits. The FDMS6673BZ has similar gate charge (130 nC) but higher threshold voltage (3.0V), requiring gate drive circuit evaluation. The IRFR5505TRPBF has significantly lower gate charge (32 nC), which may cause faster switching transients and require gate drive circuit adjustment to prevent overshoot.

Q: Which substitute is recommended for new designs?

A: The DMP3010LPSQ-13 is the primary recommendation for new designs. It provides the best balance of electrical equivalence (30V Vdss, 36A continuous current, 7.5mOhm on-resistance, 2.1V threshold voltage), Active product status, unlimited MSL rating, and RoHS3/REACH compliance. The FDMS6673BZ is a secondary option if superior thermal performance and lower on-resistance are critical requirements and PCB layout redesign is acceptable.

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