BSC080N03LSGATMA1 Equivalent & Substitute Parts

Part Overview

The BSC080N03LSGATMA1 is an N-Channel 30 V MOSFET manufactured by Infineon Technologies in the OptiMOS™ series. This device is rated for 14 A continuous drain current at 25°C (Ta) and 53 A at case temperature (Tc), with a maximum on-resistance of 8 mOhm at 30 A and 10 V gate-source voltage. The part is packaged in a surface-mount 8-PowerTDFN (PG-TDSON-8-5) configuration with RoHS3 compliance and unlimited moisture sensitivity level.

The BSC080N03LSGATMA1 is classified as obsolete. Equivalent and substitute parts are necessary to support ongoing production requirements, design continuity, and long-term component availability. Substitute devices must maintain electrical compatibility across drain-source voltage, continuous drain current, on-resistance characteristics, and thermal performance parameters while accommodating packaging and sourcing constraints.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	14	A
Continuous Drain Current @ Case Temp (Tc)	53	A
On-Resistance (Rds On Max) @ 30A, 10V	8	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	2.2	V
Gate Charge (Qg) @ 10V	21	nC
Input Capacitance (Ciss) @ 15V	1700	pF
Power Dissipation (Ta)	2.5	W
Power Dissipation (Tc)	35	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PowerTDFN (PG-TDSON-8-5)	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the BSC080N03LSGATMA1 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-Source Voltage (Vdss) must equal or exceed 30 V
Continuous drain current at 25°C (Ta) must equal or exceed 14 A
Continuous drain current at case temperature (Tc) must equal or exceed 53 A
On-resistance (Rds On) must not exceed 8 mOhm at the specified test conditions
Gate-source threshold voltage must be compatible with 10 V drive voltage
Operating temperature range must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

Surface-mount packaging with compatible footprint and pin configuration
8-pin power package format (PowerTDFN, PQFN, VSON, or DFN variants)
RoHS3 compliance required
Moisture sensitivity level MSL 1 (unlimited) preferred

Substitution Logic: Substitute parts are grouped into two categories: direct manufacturer equivalents from Infineon Technologies and cross-manufacturer alternatives from onsemi and Texas Instruments. Direct Infineon equivalents (BSC080N03MSGATMA1) maintain identical electrical specifications with packaging variations. Cross-manufacturer substitutes (FDMS8680, AON6414AL, CSD17302Q5A, CSD17307Q5A, CSD17322Q5A, CSD17507Q5A, CSD17522Q5A, CSD17527Q5A) provide equivalent or superior electrical performance within the 30 V, 14 A continuous drain current class while accommodating different package geometries and sourcing availability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Ta (A)	Id @ Tc (A)	Rds On Max (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Package	Status
BSC080N03LSGATMA1	Infineon	30	14	53	8	2.2	21	1700	8-PowerTDFN	Obsolete
BSC080N03MSGATMA1	Infineon	30	13	53	8	2.0	27	2100	8-PowerTDFN	Not For New Designs
FDMS8680	onsemi	30	14	35	7	3.0	26	1590	8-PQFN	Active
AON6414AL	Alpha & Omega	30	13	30	8	2.5	24	1380	8-DFN	Active
CSD16410Q5A	Texas Instruments	25	16	59	8.5	2.3	5	740	8-VSON	Active
CSD17302Q5A	Texas Instruments	30	16	87	7.9	1.7	7	950	8-VSON	Active
CSD17307Q5A	Texas Instruments	30	14	73	10.5	1.8	5.2	700	8-VSON	Active
CSD17322Q5A	Texas Instruments	30	-	87	8.8	2.0	4.3	695	8-VSON	Active
CSD17507Q5A	Texas Instruments	30	13	65	10.8	2.1	3.6	530	8-VSON	Active
CSD17522Q5A	Texas Instruments	30	-	87	8.1	2.0	4.3	695	8-VSON	Active
CSD17527Q5A	Texas Instruments	30	-	65	10.8	2.0	3.4	506	8-VSON	Active

Engineering Selection Recommendations

Primary Recommendation: BSC080N03MSGATMA1

The BSC080N03MSGATMA1 is the direct manufacturer equivalent from Infineon Technologies. This part maintains identical drain-source voltage (30 V), case temperature drain current (53 A), on-resistance (8 mOhm), and thermal performance (35 W Tc) specifications. The continuous drain current at 25°C is 13 A versus 14 A on the original part, representing a 7% reduction that remains within acceptable tolerance for most applications. Gate charge increases from 21 nC to 27 nC, and input capacitance increases from 1700 pF to 2100 pF, resulting in marginally higher switching losses. The part is classified as "Not For New Designs" but remains available with 1,000,200 units in stock. Packaging is identical (8-PowerTDFN), and RoHS3 compliance is maintained. This substitute is suitable for production continuity and design refresh applications.

Secondary Recommendation: CSD17302Q5A

The CSD17302Q5A from Texas Instruments (NexFET™ series) meets or exceeds all critical electrical parameters. Drain-source voltage is 30 V, continuous drain current at 25°C is 16 A (14% higher than original), and case temperature drain current is 87 A (64% higher). On-resistance is 7.9 mOhm, superior to the 8 mOhm specification. Gate charge is significantly lower at 7 nC versus 21 nC, reducing switching losses. Input capacitance is 950 pF versus 1700 pF, further reducing switching losses and improving efficiency. The part is active and widely available (14,560 units in stock). Package is 8-VSON, compatible with 8-PowerTDFN footprints in most applications. REACH status is "Affected," requiring compliance verification for regulated applications. This substitute is recommended for new designs and applications prioritizing efficiency.

Tertiary Recommendation: CSD17507Q5A

The CSD17507Q5A from Texas Instruments provides 30 V drain-source voltage, 13 A continuous drain current at 25°C (matching the BSC080N03MSGATMA1), and 65 A at case temperature. On-resistance is 10.8 mOhm, exceeding the 8 mOhm specification by 35%. Gate charge is 3.6 nC, and input capacitance is 530 pF, both significantly lower than the original part. This device is active and available (17,900 units in stock). The elevated on-resistance may increase power dissipation in high-current applications but is acceptable for moderate-current designs. REACH status is "Unaffected." This substitute is suitable for applications where switching speed and efficiency are prioritized over continuous current capability.

Alternative Consideration: FDMS8680

The FDMS8680 from onsemi (PowerTrench® series) provides 30 V drain-source voltage and 14 A continuous drain current at 25°C, matching the original part exactly. Case temperature drain current is 35 A, significantly lower than the 53 A specification. On-resistance is 7 mOhm, superior to the 8 mOhm specification. The part is active and available (2,896 units in stock). Package is 8-PQFN, requiring PCB layout verification for compatibility. This substitute is suitable for applications where case temperature drain current requirements do not exceed 35 A.

Compliance and Sourcing:

All recommended substitutes maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity level. All parts operate across the -55°C to 150°C temperature range. Sourcing availability is confirmed for all active-status devices. For applications subject to REACH regulations, CSD17302Q5A and CSD17522Q5A require compliance verification due to "REACH Affected" status; all other substitutes are "REACH Unaffected."

Frequently Asked Questions (FAQ)

Q: Can BSC080N03MSGATMA1 be used as a direct replacement for BSC080N03LSGATMA1?

A: Yes. The BSC080N03MSGATMA1 is a direct Infineon equivalent with identical voltage rating (30 V), case temperature drain current (53 A), on-resistance (8 mOhm), and package type (8-PowerTDFN). The continuous drain current at 25°C is 13 A versus 14 A, a 7% reduction. Gate charge increases from 21 nC to 27 nC. These differences are within acceptable tolerance for most applications. Packaging and pinout are identical, requiring no PCB modifications.

Q: What is the primary difference between the Infineon BSC080N03LSGATMA1 and the Texas Instruments CSD17302Q5A?

A: The primary differences are package type and switching characteristics. The BSC080N03LSGATMA1 uses 8-PowerTDFN packaging, while the CSD17302Q5A uses 8-VSON packaging. The CSD17302Q5A has significantly lower gate charge (7 nC versus 21 nC) and input capacitance (950 pF versus 1700 pF), resulting in lower switching losses and improved efficiency. The CSD17302Q5A also provides higher case temperature drain current (87 A versus 53 A). Both devices maintain 30 V drain-source voltage and 8 mOhm on-resistance specifications.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant. All parts also maintain MSL 1 (unlimited) moisture sensitivity level, matching the original BSC080N03LSGATMA1 specification.

Q: Which substitute part has the lowest on-resistance?

A: The FDMS8680 has the lowest on-resistance at 7 mOhm, compared to 8 mOhm for the original part. The CSD17302Q5A also provides 7.9 mOhm. Lower on-resistance reduces power dissipation and improves efficiency in high-current applications.

Q: Can I use CSD16410Q5A as a substitute?

A: CSD16410Q5A is not recommended as a primary substitute. This part has a drain-source voltage rating of 25 V, which is 5 V lower than the 30 V specification of the BSC080N03LSGATMA1. While continuous drain current at 25°C is 16 A (exceeding the 14 A requirement), the reduced voltage rating limits its use to applications with maximum operating voltages below 25 V.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge increases switching losses and requires higher gate drive current. The BSC080N03MSGATMA1 has 27 nC gate charge versus 21 nC for the original part, a 29% increase. Texas Instruments NexFET™ devices (CSD17302Q5A, CSD17307Q5A, CSD17507Q5A, CSD17522Q5A, CSD17527Q5A) have significantly lower gate charge (3.4 to 7 nC), reducing switching losses and improving efficiency. For applications with high switching frequencies or tight thermal budgets, lower gate charge is preferred.

Q: Are there packaging compatibility concerns when substituting with Texas Instruments devices?

A: Texas Instruments NexFET™ devices use 8-VSON packaging, while the original BSC080N03LSGATMA1 uses 8-PowerTDFN packaging. Both are 8-pin surface-mount packages with similar footprints and pin configurations. PCB layout verification is required to confirm pad spacing and thermal via compatibility. The onsemi FDMS8680 uses 8-PQFN packaging, which also requires footprint verification. The Infineon BSC080N03MSGATMA1 uses identical 8-PowerTDFN packaging, requiring no layout modifications.

Q: Which substitute part is recommended for new designs?

A: CSD17302Q5A is recommended for new designs. This part is active (not obsolete or "not for new designs"), provides superior electrical performance (lower gate charge, lower input capacitance, higher drain current), and is widely available. The part meets all voltage and current requirements while improving efficiency. REACH compliance verification is required for regulated applications.

Q: What is the difference between continuous drain current at Ta (25°C) and Tc (case temperature)?

A: Continuous drain current at Ta (25°C) is the maximum current the device can sustain at 25°C ambient temperature without exceeding thermal limits. Continuous drain current at Tc (case temperature) is the maximum current at the device's case temperature, typically higher due to improved heat dissipation. The BSC080N03LSGATMA1 is rated for 14 A at Ta and 53 A at Tc. Substitute parts must meet or exceed both specifications for equivalent performance.

Q: Can I use multiple substitute parts interchangeably in the same design?

A: No. While all listed parts are electrically compatible within the 30 V, 14 A continuous drain current class, they have different package types, gate charge characteristics, and on-resistance specifications. Interchangeability requires identical packaging and electrical specifications. For production designs, select a single substitute part and qualify it thoroughly. For prototype or low-volume applications, confirm package compatibility and electrical performance before assembly.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message