BSC009NE2LS5ATMA1 Equivalent & Substitute Parts

Part Overview

The BSC009NE2LS5ATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, part of the OptiMOS™ series. This device operates at 25V drain-to-source voltage with continuous drain current ratings of 41A at Ta and 100A at Tc. The component is housed in a PG-TDSON-8-7 package and is designed for surface mount applications requiring efficient power switching in compact form factors.

The BSC009NE2LS5ATMA1 maintains Active product status with full RoHS3 compliance and MSL Level 1 rating. Identifying equivalent substitute parts is necessary when managing supply chain continuity, addressing component availability constraints, or optimizing procurement across multiple suppliers while maintaining electrical and mechanical compatibility.

Substiute Parts

BSC009NE2LS5ATMA1

Infineon TechnologiesIn Stock: 3255BSC009NE2LS5ATMA1 Datasheet

Current PartRFQ

FDMS8320LDC

Fairchild SemiconductorIn Stock: 2765FDMS8320LDC Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the BSC009NE2LS5ATMA1 are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following key parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) rating of 25V or higher
• Continuous drain current capability meeting or exceeding 41A at Ta and 100A at Tc
• On-resistance (Rds On) characteristics compatible with 0.9mOhm maximum specification
• Gate threshold voltage and gate charge parameters within acceptable operating ranges
• Channel type: N-Channel MOSFET technology

Mechanical Compatibility Criteria:

• Surface mount package configuration
• Pin count and footprint compatibility with PG-TDSON-8-7 or equivalent package designations
• Operating temperature range encompassing -55°C to 150°C

Compliance and Certification:

• RoHS3 compliance status
• Active product status with ongoing manufacturer support
• ECCN and HTSUS classifications aligned with export and tariff requirements

The FDMS8320LDC from Fairchild Semiconductor is identified as a manufacturer-recommended substitute based on these criteria.

Parameter Comparison

Engineering Selection Recommendations

Selection between the BSC009NE2LS5ATMA1 and FDMS8320LDC should be based on the following engineering factors:

Product Status and Support: Both components maintain Active product status with ongoing manufacturer support. This ensures continued availability and technical documentation access for design and manufacturing phases.

Compliance and Certification: Both parts carry EAR99 ECCN classification, indicating equivalent export control status. The BSC009NE2LS5ATMA1 is explicitly RoHS3 compliant with MSL Level 1 rating. Compliance verification for the FDMS8320LDC should be confirmed against specific application requirements and regional regulations.

Supply Chain Continuity: The BSC009NE2LS5ATMA1 currently maintains 3200 units in stock, while the FDMS8320LDC maintains 2683 units. Selection should account for procurement lead times, volume requirements, and supplier relationship considerations.

Electrical Performance: Both components are N-Channel MOSFETs designed for surface mount applications. The specific electrical parameters (Vdss, Id, Rds On, Qg, Ciss) provided for the BSC009NE2LS5ATMA1 establish the baseline performance envelope. Detailed electrical parameter comparison with the FDMS8320LDC requires access to complete datasheet specifications for the substitute part.

Package and Thermal Considerations: The BSC009NE2LS5ATMA1 is specified in PG-TDSON-8-7 package with defined thermal performance (2.5W Ta, 74W Tc). Package compatibility and thermal characteristics of the FDMS8320LDC must be verified against PCB layout and thermal management requirements.

Frequently Asked Questions (FAQ)

Q: What are the primary electrical criteria for substituting the BSC009NE2LS5ATMA1?

A: The substitute part must be an N-Channel MOSFET with Vdss rating of 25V or higher, continuous drain current capability of at least 41A at Ta and 100A at Tc, and on-resistance characteristics compatible with the 0.9mOhm maximum specification. Gate charge, threshold voltage, and input capacitance parameters must fall within acceptable operating ranges for the target application.

Q: Is the FDMS8320LDC a direct pin-for-pin replacement?

A: Both components are surface mount N-Channel MOSFETs in similar package categories. Pin-for-pin compatibility requires verification of package designations, pin assignments, and PCB footprint alignment. The FDMS8320LDC description references a COOLTM package type, which may differ from the PG-TDSON-8-7 specification of the BSC009NE2LS5ATMA1. Detailed package drawings and pin configuration documentation must be consulted before PCB implementation.

Q: What compliance certifications apply to both parts?

A: Both the BSC009NE2LS5ATMA1 and FDMS8320LDC carry EAR99 ECCN classification. The BSC009NE2LS5ATMA1 is explicitly RoHS3 compliant with MSL Level 1 rating. Compliance status for the FDMS8320LDC should be verified against specific application requirements and regional regulatory frameworks.

Q: How do thermal performance characteristics compare?

A: The BSC009NE2LS5ATMA1 is specified with power dissipation ratings of 2.5W at Ta and 74W at Tc. Thermal performance of the FDMS8320LDC must be evaluated through its datasheet specifications, considering package thermal resistance, junction-to-ambient thermal characteristics, and application-specific thermal management requirements.

Q: What inventory considerations apply to component selection?

A: The BSC009NE2LS5ATMA1 currently maintains 3200 units in stock, while the FDMS8320LDC maintains 2683 units. Component selection should account for procurement volume requirements, lead time constraints, and supplier availability for both immediate and future production phases.

Q: Are there any gate voltage or drive circuit compatibility considerations?

A: The BSC009NE2LS5ATMA1 specifies maximum gate voltage (Vgs) of ±16V with gate threshold voltage of 2V maximum at 250µA. Gate charge is specified at 57nC maximum at 10V. Drive circuit design must accommodate these specifications. Equivalent parameters for the FDMS8320LDC must be verified to ensure compatibility with existing gate driver circuits and control logic.