BS270 N-Channel MOSFET 60V 400mA Equivalent & Substitute Parts

Part Overview

The BS270 is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 400mA continuous drain current at 25°C. The device is housed in a TO-92-3 through-hole package and dissipates a maximum of 625mW. This component is classified as Active product status and is RoHS3 compliant. Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing, inventory constraints, or specific performance trade-offs within the defined electrical and mechanical parameter space.

Substiute Parts

BS270

onsemiIn Stock: 19243BS270 Datasheet

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TN2106N3-G

Microchip TechnologyIn Stock: 1854TN2106N3-G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the BS270 are identified based on strict electrical and mechanical parameter alignment within the N-Channel MOSFET category. The substitution logic is governed by the following key parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 60V
• FET Type: Must be N-Channel
• Technology: Must be MOSFET (Metal Oxide)
• Gate-Source Voltage (Vgs Max): Must support ±20V operation
• Input Capacitance (Ciss): Must not exceed 50pF @ 25V
• Operating Temperature Range: Must span -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Must be Through Hole
• Package / Case: Must be TO-92-3 (TO-226AA)

Regulatory Compliance:

• RoHS Status: Must be ROHS3 Compliant
• REACH Status: Must be REACH Unaffected

The TN2106N3-G from Microchip Technology meets all electrical and mechanical substitution criteria. While the continuous drain current (Id) is rated at 300mA compared to the BS270's 400mA, and the power dissipation is 740mW versus 625mW, these parameters remain within acceptable substitution boundaries for applications where the lower current rating is not a limiting factor. The Rds On specification of 2.5Ohm @ 500mA, 10V is marginally higher than the BS270's 2Ohm, representing a minor performance trade-off.

Parameter Comparison

Engineering Selection Recommendations

BS270 (onsemi): Select this part when maximum continuous drain current of 400mA is required and onsemi sourcing is preferred. The device is Active product status with full RoHS3 compliance and REACH unaffected designation. Inventory availability is 19,179 pieces.

TN2106N3-G (Microchip Technology): Select this part when Microchip Technology sourcing is required or when the 300mA continuous drain current rating is sufficient for the application. The device is Active product status with full RoHS3 compliance and REACH unaffected designation. Inventory availability is 1,761 pieces. The higher power dissipation rating of 740mW provides additional thermal margin in certain circuit configurations.

Both parts share identical voltage ratings, gate-source specifications, input capacitance, operating temperature range, and package form factor. Selection between these devices is determined by current requirements, manufacturer preference, and availability constraints rather than fundamental electrical incompatibility.

Frequently Asked Questions (FAQ)

Q: Can the TN2106N3-G replace the BS270 in all applications?

A: The TN2106N3-G is electrically and mechanically compatible with the BS270 in applications where the continuous drain current requirement does not exceed 300mA. Both devices share identical Vdss (60V), Vgs (±20V), Ciss (50pF), and operating temperature range (-55°C to 150°C). The primary trade-off is the reduced current rating and marginally higher Rds On specification. Circuit-level validation is required to confirm suitability for specific current and power dissipation demands.

Q: What is the significance of the Rds On difference between these parts?

A: The BS270 specifies Rds On (Max) of 2Ohm @ 500mA, 10V, while the TN2106N3-G specifies 2.5Ohm @ 500mA, 10V. This 0.5Ohm difference results in increased on-state voltage drop and power dissipation in the substitute device. For low-current applications or where switching losses dominate, this difference is negligible. For high-current or continuous conduction applications, the impact on thermal performance must be evaluated.

Q: Are both parts suitable for the same PCB layout and thermal management approach?

A: Yes. Both devices use the TO-92-3 (TO-226AA) through-hole package with identical pin configuration and mechanical footprint. PCB layout and thermal management strategies developed for the BS270 are directly applicable to the TN2106N3-G without modification. Thermal performance differences arise from the power dissipation rating (625mW vs. 740mW) rather than package geometry.

Q: What are the regulatory compliance implications of substitution?

A: Both the BS270 and TN2106N3-G are RoHS3 compliant and REACH unaffected. Substitution between these parts does not introduce regulatory compliance risk in applications subject to RoHS or REACH requirements. Both devices carry EAR99 ECCN classification and identical HTSUS codes (8541.21.0095).

Q: How do the gate threshold voltage specifications differ?

A: The BS270 specifies Vgs(th) (Max) of 2.5V @ 250µA, while the TN2106N3-G specifies 2V @ 1mA. These measurements are taken at different drain current levels, making direct comparison imprecise. Both specifications fall within the ±20V gate-source voltage rating and support standard logic-level gate drive circuits. Gate drive circuit design does not require modification when substituting between these parts.

Q: What inventory considerations apply to these substitutes?

A: The BS270 has 19,179 pieces in stock, while the TN2106N3-G has 1,761 pieces in stock. Substitution may be necessary when BS270 availability is constrained. Conversely, the BS270's higher inventory level makes it the preferred choice for high-volume production runs where supply continuity is critical.