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BS170_L34Z N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The BS170_L34Z is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 500mA continuous drain current in a TO-92-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 830mW maximum power dissipation and operates across the temperature range of -55°C to 150°C (junction temperature).
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 60 | V |
| Current - Continuous Drain (Id) @ 25°C | 500 | mA |
| Rds On (Max) @ Id, Vgs | 5 @ 200mA, 10V | Ohm |
| Vgs(th) (Max) @ Id | 3 @ 1mA | V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 @ 10V | pF |
| Power Dissipation (Max) | 830 | mW |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-92-3 (TO-226AA) | — |
Substitute Part Grouping Explanation
Substitution eligibility for the BS170_L34Z is determined by the following critical parameters:
Electrical Compatibility Requirements:
- Drain to Source Voltage (Vdss) must equal or exceed 60V
- Continuous drain current (Id) must meet or exceed 500mA at 25°C
- On-state resistance (Rds On) must not exceed 5 Ohm at specified gate-source voltage
- Gate-source threshold voltage (Vgs(th)) must be compatible with 3V maximum
- Input capacitance (Ciss) characteristics must support circuit switching performance
- Power dissipation capability must support 830mW operation
Mechanical Compatibility Requirements:
- Package type must be TO-92-3 (TO-226AA) through-hole configuration
- Pin configuration must match the three-terminal TO-92-3 standard
Regulatory and Compliance Requirements:
- REACH compliance status must be unaffected or compliant
- ECCN classification must align with EAR99 designation
The substitute parts listed below satisfy these criteria within the allowed parameter specifications.
Parameter Comparison
| Parameter | BS170_L34Z (Main) | BS170-D27Z (Direct) | VN10KN3-G (Similar) |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Microchip Technology |
| Product Status | Obsolete | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Drain to Source Voltage (Vdss) | 60V | 60V | 60V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) | 500mA (Ta) | 310mA (Tj) |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V | 5Ohm @ 200mA, 10V | 5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA | 3V @ 1mA | 2.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V | 40pF @ 10V | 60pF @ 25V |
| Power Dissipation (Max) | 830mW (Ta) | 830mW (Ta) | 1W (Tc) |
| Operating Temperature Range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) |
| Package / Case | TO-92-3 (TO-226AA) | TO-92-3 (TO-226AA) | TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 | EAR99 |
Engineering Selection Recommendations
BS170-D27Z (Direct Equivalent - onsemi):
The BS170-D27Z is the direct equivalent substitute for the BS170_L34Z. Both parts share identical electrical specifications across all critical parameters: 60V Vdss, 500mA continuous drain current, 5Ohm Rds On at 200mA/10V, and 3V Vgs(th). The BS170-D27Z maintains the same TO-92-3 through-hole package configuration and operating temperature range. The primary distinction is product status: BS170-D27Z is active and currently in production, whereas BS170_L34Z is obsolete. The BS170-D27Z is supplied in cut tape packaging and carries RoHS3 compliance certification. This part is the preferred direct replacement for new designs and ongoing production support.
VN10KN3-G (Similar Substitute - Microchip Technology):
The VN10KN3-G is a similar substitute manufactured by Microchip Technology. This device maintains the same 60V Vdss rating, TO-92-3 package, and operating temperature range as the main part. The VN10KN3-G differs in continuous drain current specification: 310mA (Tj) versus 500mA (Ta) for the BS170_L34Z. The on-state resistance specification differs in measurement conditions: 5Ohm @ 500mA/10V for the VN10KN3-G versus 5Ohm @ 200mA/10V for the main part. Input capacitance is higher at 60pF @ 25V compared to 40pF @ 10V. Power dissipation is rated at 1W (Tc) versus 830mW (Ta). The VN10KN3-G is active in production and carries RoHS3 compliance. This substitute is suitable for applications where the reduced continuous drain current specification does not exceed circuit requirements.
Both substitute parts maintain REACH unaffected status and EAR99 ECCN classification, ensuring regulatory compliance alignment with the original part.
Frequently Asked Questions (FAQ)
Q: Can BS170-D27Z be used as a direct replacement for BS170_L34Z?
A: Yes. The BS170-D27Z is a direct equivalent. Both parts share identical electrical specifications for Vdss (60V), continuous drain current (500mA), Rds On (5Ohm @ 200mA, 10V), Vgs(th) (3V @ 1mA), input capacitance (40pF @ 10V), power dissipation (830mW), and operating temperature range (-55°C to 150°C). The package configuration (TO-92-3) and mounting type (through hole) are identical. The BS170-D27Z is currently in active production status.
Q: What is the key difference between BS170-D27Z and VN10KN3-G?
A: The primary difference is continuous drain current specification. BS170-D27Z maintains 500mA (Ta) matching the original part, while VN10KN3-G is rated for 310mA (Tj). Additionally, VN10KN3-G has higher input capacitance (60pF @ 25V versus 40pF @ 10V) and higher power dissipation capability (1W versus 830mW). Both devices share the same 60V Vdss rating and TO-92-3 package.
Q: Can VN10KN3-G be used in applications requiring 500mA continuous drain current?
A: No. The VN10KN3-G is rated for 310mA continuous drain current, which is below the 500mA requirement of the original BS170_L34Z specification. Using this part in applications requiring 500mA operation would exceed the device's rated current capacity. The BS170-D27Z is the appropriate choice for applications requiring 500mA continuous drain current.
Q: Are both substitute parts available in the same packaging format as the original?
A: Both substitute parts use the TO-92-3 (TO-226AA) through-hole package, matching the original BS170_L34Z package configuration. However, packaging formats differ: BS170-D27Z is supplied in cut tape (CT), while VN10KN3-G is supplied in bag format. These packaging differences do not affect electrical or mechanical compatibility.
Q: Do the substitute parts meet the same regulatory requirements as BS170_L34Z?
A: Yes. Both BS170-D27Z and VN10KN3-G maintain REACH unaffected status and EAR99 ECCN classification, matching the regulatory compliance profile of the original part. BS170-D27Z carries RoHS3 compliance certification. Both parts are suitable for applications with equivalent regulatory requirements.
Q: What is the significance of the obsolete status of BS170_L34Z?
A: Obsolete status indicates that the BS170_L34Z is no longer in production and future availability cannot be guaranteed. Substitute parts with active production status (BS170-D27Z and VN10KN3-G) ensure long-term design support and procurement continuity for new designs and ongoing production requirements.
Q: How do the gate-source threshold voltage specifications compare?
A: BS170_L34Z and BS170-D27Z both specify 3V maximum Vgs(th) @ 1mA. VN10KN3-G specifies 2.5V maximum Vgs(th) @ 1mA, which is lower. A lower threshold voltage indicates the device requires less gate-source voltage to reach the specified drain current level. This difference may affect gate drive circuit design considerations.
Q: Are there any temperature measurement differences between the parts?
A: Yes. BS170_L34Z and BS170-D27Z specify continuous drain current at Ta (ambient temperature), while VN10KN3-G specifies this parameter at Tj (junction temperature). Additionally, power dissipation is specified at Ta for the first two parts and at Tc (case temperature) for VN10KN3-G. These measurement condition differences reflect different characterization methodologies but do not affect functional compatibility in equivalent circuit applications.
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