BR25H040FVT-2CE2 Equivalent & Substitute Parts

Part Overview

The BR25H040FVT-2CE2 is a 4Kbit EEPROM memory IC manufactured by Rohm Semiconductor, featuring SPI interface with 10 MHz clock frequency and 8-TSSOP-B surface mount packaging. This component is classified as Active product status with AEC-Q100 automotive qualification. Substitute parts are identified when equivalent memory capacity, interface protocol, package form factor, and operating specifications align within acceptable electrical and mechanical tolerances for the application.

Substiute Parts

BR25H040FVT-2CE2

Rohm SemiconductorIn Stock: 3719BR25H040FVT-2CE2 Datasheet

Current PartRFQ

M95040-DRDW3TP/K

STMicroelectronicsIn Stock: 18961M95040-DRDW3TP/K Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the BR25H040FVT-2CE2 is determined by the following critical parameters:

• Memory capacity: 4Kbit with 512 x 8 organization
• Interface protocol: SPI
• Package form factor: 8-TSSOP with 0.173" width and 4.40mm width specification
• Supply voltage range: Must encompass or be compatible with 2.5V ~ 5.5V
• Operating temperature range: -40°C ~ 125°C
• Write cycle time: 4ms
• Automotive grade and AEC-Q100 qualification
• Surface mount technology

The M95040-DRDW3TP/K meets these substitution criteria. Clock frequency (20 MHz vs. 10 MHz) represents an enhanced specification that does not restrict substitution, as the substitute operates at a higher speed while maintaining backward compatibility with the original interface and timing requirements.

Parameter Comparison

Engineering Selection Recommendations

Both the BR25H040FVT-2CE2 and M95040-DRDW3TP/K are Active product status components with identical AEC-Q100 automotive qualification and ROHS3 compliance. Selection between these parts is based on supply chain availability and voltage supply range requirements. The M95040-DRDW3TP/K supports extended lower voltage operation (1.8V minimum vs. 2.5V minimum) and provides higher clock frequency capability (20 MHz vs. 10 MHz), making it suitable for applications requiring either lower supply voltage or faster data transfer rates while maintaining full compatibility with the original 4Kbit SPI EEPROM interface specification.

Frequently Asked Questions (FAQ)

Q: Can the M95040-DRDW3TP/K directly replace the BR25H040FVT-2CE2 in existing designs?

A: Yes. Both components share identical memory capacity (4Kbit), organization (512 x 8), SPI interface, write cycle time (4ms), operating temperature range (-40°C ~ 125°C), package form factor (8-TSSOP), and automotive qualification (AEC-Q100). The higher clock frequency of the substitute (20 MHz) does not prevent substitution.

Q: What is the difference in voltage supply range between these parts?

A: The BR25H040FVT-2CE2 operates from 2.5V to 5.5V, while the M95040-DRDW3TP/K operates from 1.8V to 5.5V. The substitute supports lower minimum supply voltage, expanding application flexibility.

Q: Are there package differences between BR25H040FVT-2CE2 and M95040-DRDW3TP/K?

A: Both use 8-TSSOP surface mount packages with identical 0.173" width and 4.40mm width specifications. The BR25H040FVT-2CE2 specifies 8-TSSOP-B variant, while the M95040-DRDW3TP/K specifies standard 8-TSSOP. These designations refer to the same physical package form factor suitable for PCB assembly.

Q: Do both parts meet automotive qualification requirements?

A: Yes. Both the BR25H040FVT-2CE2 and M95040-DRDW3TP/K carry Automotive grade classification and AEC-Q100 qualification, meeting automotive industry reliability and quality standards.

Q: What is the significance of the 10 MHz vs. 20 MHz clock frequency difference?

A: The M95040-DRDW3TP/K operates at twice the clock frequency of the BR25H040FVT-2CE2. This represents enhanced performance capability. Applications designed for 10 MHz operation function correctly with the 20 MHz substitute, as the substitute maintains backward compatibility with the SPI interface protocol and timing specifications.