BMS3004-1E Equivalent & Substitute Parts

Part Overview

The BMS3004-1E is a P-Channel MOSFET manufactured by onsemi, rated for 75V drain-to-source voltage and 68A continuous drain current in a Through Hole TO-220F-3SG package. This device is classified as obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement continuity. Substitute parts must maintain functional compatibility across critical electrical parameters including voltage rating, current capacity, and thermal characteristics while accommodating package variations within the TO-220 family.

Substiute Parts

BMS3004-1E
onsemiIn Stock: 6114BMS3004-1E Datasheet
BMS3004-1E
Current Part
SUP70101EL-GE3
Vishay SiliconixIn Stock: 1409SUP70101EL-GE3 Datasheet
SUP70101EL-GE3
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Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 68 A (Ta)
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 34A, 10V
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 13400 pF @ 20V
Vgs (Max) ±20 V
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BMS3004-1E is determined by the following critical parameters:

Electrical Compatibility Criteria:

  • FET Type: P-Channel topology must be maintained
  • Drain to Source Voltage (Vdss): Substitute must equal or exceed 75V
  • Current - Continuous Drain (Id): Substitute must equal or exceed 68A
  • Gate Charge (Qg): Lower values indicate faster switching performance
  • Input Capacitance (Ciss): Lower values reduce gate drive requirements
  • Vgs (Max): Must support ±20V gate voltage specification

Mechanical & Thermal Criteria:

  • Mounting Type: Through Hole configuration required
  • Package Family: TO-220 variants (TO-220F-3SG, TO-220AB) are mechanically compatible
  • Operating Temperature: Substitute must support -55°C to 150°C minimum range

Compliance & Status Criteria:

  • RoHS3 Compliance: Required for regulatory alignment
  • Product Status: Active status preferred for long-term availability

The SUP70101EL-GE3 qualifies as a substitute based on superior electrical ratings (100V Vdss, 120A Id) that encompass the BMS3004-1E requirements, compatible TO-220 package family, matching gate voltage specification, and active product status with RoHS3 compliance.

Parameter Comparison

Parameter BMS3004-1E (Main) SUP70101EL-GE3 (Substitute) Unit
Manufacturer onsemi Vishay Siliconix
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 75 100 V
Current - Continuous Drain (Id) @ 25°C 68 (Ta) 120 (Tc) A
Rds On (Max) @ Id, Vgs 8.5 @ 34A, 10V Not Specified mOhm
Gate Charge (Qg) (Max) @ Vgs 300 @ 10V 190 @ 10V nC
Input Capacitance (Ciss) (Max) @ Vds 13400 @ 20V 7000 @ 50V pF
Vgs (Max) ±20 ±20 V
Operating Temperature Range -55 to 150 -55 to 175 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Product Status Obsolete Active
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitute: SUP70101EL-GE3

The SUP70101EL-GE3 is the qualified substitute for the obsolete BMS3004-1E based on the following engineering factors:

Electrical Performance: The SUP70101EL-GE3 exceeds the BMS3004-1E electrical specifications across all critical parameters. The 100V Vdss rating provides 25V additional margin over the 75V requirement. The 120A continuous drain current rating (measured at Tc) substantially exceeds the 68A requirement. Gate charge is reduced to 190 nC from 300 nC, indicating improved switching efficiency. Input capacitance is reduced to 7000 pF from 13400 pF, reducing gate drive circuit demands.

Thermal & Temperature Performance: The SUP70101EL-GE3 supports an extended operating temperature range of -55°C to 175°C, exceeding the BMS3004-1E range of -55°C to 150°C. Maximum power dissipation is rated at 375W (Tc) compared to 40W (Tc) for the BMS3004-1E, providing superior thermal headroom.

Package & Mechanical Compatibility: Both devices utilize Through Hole mounting in the TO-220-3 package family. The SUP70101EL-GE3 uses TO-220AB variant, which is mechanically compatible with TO-220F-3SG pinout and footprint for direct board-level substitution.

Regulatory & Compliance Status: Both devices are ROHS3 compliant and carry EAR99 ECCN classification. The SUP70101EL-GE3 holds active product status, ensuring long-term availability and supply chain continuity.

Gate Voltage Compatibility: Both devices support ±20V maximum gate voltage specification, ensuring compatibility with existing gate drive circuits.

Frequently Asked Questions (FAQ)

Q: Can the SUP70101EL-GE3 directly replace the BMS3004-1E in existing designs?

A: Yes. The SUP70101EL-GE3 is electrically and mechanically compatible for direct substitution. Both devices are P-Channel MOSFETs in TO-220-3 packages with ±20V gate voltage specification. The SUP70101EL-GE3 provides superior electrical ratings (100V Vdss, 120A Id) that encompass the BMS3004-1E requirements. Pin configuration and footprint are compatible between TO-220F-3SG and TO-220AB variants.

Q: What are the key differences between these two devices?

A: The SUP70101EL-GE3 provides higher voltage rating (100V vs. 75V), higher current capacity (120A vs. 68A), lower gate charge (190 nC vs. 300 nC), lower input capacitance (7000 pF vs. 13400 pF), and extended temperature range (-55°C to 175°C vs. -55°C to 150°C). The SUP70101EL-GE3 is an active product, while the BMS3004-1E is obsolete.

Q: Are there any package considerations for substitution?

A: Both devices use Through Hole TO-220-3 packages. The BMS3004-1E uses TO-220F-3SG variant, while the SUP70101EL-GE3 uses TO-220AB variant. These are mechanically and electrically compatible for board-level substitution without layout modifications.

Q: Does the SUP70101EL-GE3 require different gate drive circuitry?

A: No. Both devices support ±20V maximum gate voltage and operate with standard gate drive circuits. The SUP70101EL-GE3 features lower gate charge (190 nC vs. 300 nC) and lower input capacitance (7000 pF vs. 13400 pF), which may reduce gate drive power requirements but do not necessitate circuit redesign.

Q: What is the compliance status of both devices?

A: Both the BMS3004-1E and SUP70101EL-GE3 are ROHS3 compliant. The SUP70101EL-GE3 carries active product status, ensuring regulatory support and long-term availability. The BMS3004-1E is classified as obsolete.

Q: Can the SUP70101EL-GE3 handle the same power dissipation as the BMS3004-1E?

A: The SUP70101EL-GE3 exceeds the thermal capability of the BMS3004-1E. Maximum power dissipation is 375W (Tc) for the SUP70101EL-GE3 compared to 40W (Tc) for the BMS3004-1E. This provides superior thermal margin and reliability in power dissipation applications.

Q: Is the SUP70101EL-GE3 the only available substitute?

A: Based on the provided input parameters, the SUP70101EL-GE3 is the identified substitute meeting all electrical, mechanical, and compliance criteria for the BMS3004-1E.

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