BFS17HTA Equivalent & Substitute Parts

Part Overview

The BFS17HTA is an RF transistor NPN manufactured by Diodes Incorporated, designed for radio frequency applications operating at 1.3GHz with a maximum collector-emitter breakdown voltage of 15V and power dissipation of 330mW in a surface mount SOT-23-3 package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitute parts are selected based on compatibility across key electrical parameters including transistor type (NPN), collector-emitter breakdown voltage, frequency capability, power rating, current handling, and package form factor. Surface mount packaging compatibility is maintained across primary substitutes to ensure mechanical interchangeability.

Substiute Parts

BFS17HTA
Diodes IncorporatedIn Stock: 2610BFS17HTA Datasheet
BFS17HTA
Current Part
BFS17NTA
Diodes IncorporatedIn Stock: 15179BFS17NTA Datasheet
BFS17NTA
Direct
BFR106E6327HTSA1
Infineon TechnologiesIn Stock: 1000385BFR106E6327HTSA1 Datasheet
BFR106E6327HTSA1
Upgrade
2N918 PBFREE
Central Semiconductor CorpIn Stock: 18392N918 PBFREE Datasheet
2N918 PBFREE
MFR Recommended
BFP405H6327XTSA1
Infineon TechnologiesIn Stock: 40407BFP405H6327XTSA1 Datasheet
BFP405H6327XTSA1
MFR Recommended
BFR35APE6327HTSA1
Infineon TechnologiesIn Stock: 3724BFR35APE6327HTSA1 Datasheet
BFR35APE6327HTSA1
MFR Recommended
BFR360FH6327XTSA1
Infineon TechnologiesIn Stock: 185236BFR360FH6327XTSA1 Datasheet
BFR360FH6327XTSA1
MFR Recommended
BFR92PE6327HTSA1
Infineon TechnologiesIn Stock: 305288BFR92PE6327HTSA1 Datasheet
BFR92PE6327HTSA1
MFR Recommended
MT3S16U(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 4003MT3S16U(TE85L,F) Datasheet
MT3S16U(TE85L,F)
MFR Recommended

Key Parameters

Parameter BFS17HTA Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V V
Frequency - Transition 1.3GHz GHz
Power - Max 330mW mW
Current - Collector (Ic) (Max) 25mA mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA, 1V
Operating Temperature -55°C ~ 150°C °C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution logic for the BFS17HTA is based on the following criteria:

Primary Compatibility Parameters:

  • Transistor Type: NPN (mandatory match)
  • Collector-Emitter Breakdown Voltage: 15V or higher (maintains voltage margin)
  • Frequency Capability: 1.3GHz or higher (maintains or exceeds RF performance)
  • Power Dissipation: 330mW or higher (maintains thermal headroom)
  • Current Handling: 25mA or higher (maintains current capacity)
  • Mounting Type: Surface Mount (maintains assembly compatibility)
  • Package Form Factor: SOT-23-3 or compatible surface mount packages (maintains PCB footprint compatibility)

Compliance Parameters:

  • RoHS3 Compliance (environmental regulation adherence)
  • Moisture Sensitivity Level 1 (unlimited shelf life)

Substitute parts are grouped into two categories:

Direct Substitutes (Same Package, Enhanced Performance): Parts maintaining SOT-23-3 packaging with equal or superior electrical specifications.

Functional Equivalents (Alternative Packages, Performance Variants): Parts meeting core electrical requirements but utilizing different surface mount packages or operating at different voltage/frequency points.

Parameter Comparison

Part Number Manufacturer Transistor Type Vce Breakdown (Max) Frequency Power (Max) Ic (Max) hFE (Min) Package Status
BFS17HTA Diodes Incorporated NPN 15V 1.3GHz 330mW 25mA 70 @ 2mA, 1V SOT-23-3 Obsolete
BFS17NTA Diodes Incorporated NPN 11V 3.2GHz 330mW 50mA 56 @ 5mA, 10V SOT-23-3 Active
BFR106E6327HTSA1 Infineon Technologies NPN 15V 5GHz 700mW 210mA 70 @ 70mA, 8V SOT-23-3 Active
BFR35APE6327HTSA1 Infineon Technologies NPN 15V 5GHz 280mW 45mA 70 @ 15mA, 8V SOT-23-3 Active
BFR92PE6327HTSA1 Infineon Technologies NPN 15V 5GHz 280mW 45mA 70 @ 15mA, 8V SOT-23-3 Active
2N918 PBFREE Central Semiconductor Corp NPN 15V 600MHz 200mW 50mA 20 @ 3mA, 1V TO-72 Active
BFP405H6327XTSA1 Infineon Technologies NPN 5V 25GHz 75mW 25mA 60 @ 5mA, 4V SOT-343 Active
BFR360FH6327XTSA1 Infineon Technologies NPN 9V 14GHz 210mW 35mA 90 @ 15mA, 3V SOT-723 Active
MT3S16U(TE85L,F) Toshiba Semiconductor and Storage NPN 5V 4GHz 100mW 60mA 80 @ 5mA, 1V SC-70 Active

Engineering Selection Recommendations

For Direct Replacement (Same Package, Maintained Voltage Rating):

BFR35APE6327HTSA1 and BFR92PE6327HTSA1 are functionally equivalent active parts maintaining the 15V collector-emitter breakdown voltage, SOT-23-3 package form factor, and surface mount assembly compatibility. Both parts exceed the BFS17HTA frequency capability (5GHz vs. 1.3GHz) and power rating (280mW vs. 330mW). These parts are manufactured by Infineon Technologies and carry active product status with ROHS3 compliance and MSL 1 rating.

For Enhanced Performance (Same Package, Higher Specifications):

BFR106E6327HTSA1 provides the highest performance upgrade within the SOT-23-3 package, maintaining 15V breakdown voltage while delivering 5GHz frequency capability, 700mW power dissipation, and 210mA maximum collector current. This part is suitable for applications requiring increased power handling and frequency performance.

For Lower Voltage Applications:

BFS17NTA maintains the SOT-23-3 package and Diodes Incorporated manufacturer lineage with active product status. This part operates at 11V breakdown voltage (lower than the original 15V) but provides enhanced frequency capability (3.2GHz) and current handling (50mA). Selection requires verification that 11V breakdown voltage is acceptable for the target application.

For Through-Hole Assembly:

2N918 PBFREE provides a through-hole alternative in TO-72 package with 15V breakdown voltage and 600MHz frequency capability. This part is suitable only for applications where through-hole assembly is required and frequency performance below 1.3GHz is acceptable.

For Miniaturized Designs:

BFP405H6327XTSA1 and BFR360FH6327XTSA1 offer alternative surface mount packages (SOT-343 and SOT-723 respectively) for space-constrained applications. BFP405H6327XTSA1 operates at 5V breakdown voltage with 25GHz frequency capability in SOT-343 package. BFR360FH6327XTSA1 operates at 9V breakdown voltage with 14GHz frequency capability in SOT-723 package. Both require verification of voltage and package compatibility with target circuit design.

All recommended substitutes carry ROHS3 compliance and MSL 1 moisture sensitivity rating, matching the original part's environmental specifications.

Frequently Asked Questions (FAQ)

Q: Can BFS17NTA be used as a direct replacement for BFS17HTA?

A: BFS17NTA maintains the same SOT-23-3 package and manufacturer (Diodes Incorporated) with active product status. However, the collector-emitter breakdown voltage is reduced from 15V to 11V. Substitution is permissible only if the application circuit operates at or below 11V. The part provides enhanced frequency capability (3.2GHz vs. 1.3GHz) and higher maximum collector current (50mA vs. 25mA).

Q: What is the primary advantage of BFR35APE6327HTSA1 and BFR92PE6327HTSA1 over the original BFS17HTA?

A: Both parts maintain the 15V collector-emitter breakdown voltage and SOT-23-3 package compatibility while providing significantly enhanced frequency capability (5GHz vs. 1.3GHz) and improved power dissipation margin (280mW vs. 330mW). Both are manufactured by Infineon Technologies with active product status and full ROHS3 compliance.

Q: Why is BFP405H6327XTSA1 listed as a substitute if it operates at only 5V?

A: BFP405H6327XTSA1 is included as a functional equivalent for applications where lower voltage operation is acceptable. The part provides exceptional frequency capability (25GHz) and operates in a miniaturized SOT-343 package. Substitution requires verification that the 5V collector-emitter breakdown voltage meets circuit requirements.

Q: Can 2N918 PBFREE be used in surface mount assembly?

A: No. 2N918 PBFREE is a through-hole component in TO-72 package and is not suitable for surface mount assembly. This part is listed as a functional equivalent only for applications requiring through-hole mounting technology.

Q: What is the difference between BFR35APE6327HTSA1 and BFR92PE6327HTSA1?

A: Both parts are electrically identical with matching specifications: 15V breakdown voltage, 5GHz frequency, 280mW power rating, 45mA maximum collector current, and SOT-23-3 package. The primary difference is manufacturer designation and part numbering. Both are manufactured by Infineon Technologies and carry active product status.

Q: Is MT3S16U(TE85L,F) compatible with the original BFS17HTA package?

A: No. MT3S16U(TE85L,F) uses SC-70 package (SOT-323), which differs from the BFS17HTA SOT-23-3 package. This part is listed as a functional equivalent for applications where the smaller SC-70 package is acceptable. The part operates at 5V breakdown voltage (lower than the original 15V) and provides 4GHz frequency capability.

Q: What compliance certifications are maintained across all substitute parts?

A: All substitute parts listed carry ROHS3 compliance and Moisture Sensitivity Level 1 (unlimited shelf life), matching the original BFS17HTA environmental specifications. REACH status is unaffected for all parts.

Q: Which substitute part provides the best performance upgrade while maintaining package compatibility?

A: BFR106E6327HTSA1 provides the highest performance upgrade within the SOT-23-3 package, maintaining 15V breakdown voltage while delivering 5GHz frequency capability, 700mW power dissipation, and 210mA maximum collector current. This part is suitable for applications requiring increased power handling and frequency performance without package redesign.

Q: Can BFR360FH6327XTSA1 be used in applications requiring 15V breakdown voltage?

A: No. BFR360FH6327XTSA1 operates at 9V maximum collector-emitter breakdown voltage, which is lower than the original BFS17HTA 15V rating. Substitution requires verification that 9V breakdown voltage is acceptable for the target application circuit.

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