BFR94AW,115 Equivalent & Substitute Parts Reference

Part Overview

The BFR94AW,115 is an RF transistor NPN manufactured by NXP USA Inc., designed for high-frequency applications up to 5GHz with a maximum collector-emitter breakdown voltage of 15V and power dissipation of 300mW. The device is packaged in SC-70 (SOT-323-3) surface mount configuration and is ROHS3 compliant with unlimited moisture sensitivity level.

The BFR94AW,115 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this RF transistor specification.

Substiute Parts

BFR94AW,115
NXP USA Inc.In Stock: 1136BFR94AW,115 Datasheet
BFR94AW,115
Current Part
BFU520WX
NXP USA Inc.In Stock: 3270BFU520WX Datasheet
BFU520WX
MFR Recommended
BFP193WH6327XTSA1
Infineon TechnologiesIn Stock: 54119BFP193WH6327XTSA1 Datasheet
BFP193WH6327XTSA1
MFR Recommended
BFP620FH7764XTSA1
Infineon TechnologiesIn Stock: 5428BFP620FH7764XTSA1 Datasheet
BFP620FH7764XTSA1
MFR Recommended
BFP843FH6327XTSA1
Infineon TechnologiesIn Stock: 1375BFP843FH6327XTSA1 Datasheet
BFP843FH6327XTSA1
MFR Recommended
MAX2602ESA+T
Analog Devices Inc./Maxim IntegratedIn Stock: 3030MAX2602ESA+T Datasheet
MAX2602ESA+T
MFR Recommended
MCH4009-TL-H
onsemiIn Stock: 34592MCH4009-TL-H Datasheet
MCH4009-TL-H
MFR Recommended
NSVF6003SB6T1G
onsemiIn Stock: 3489NSVF6003SB6T1G Datasheet
NSVF6003SB6T1G
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 15V V
Frequency - Transition 5GHz GHz
Noise Figure (Typ) 2dB ~ 3dB @ 1GHz ~ 2GHz dB
Power - Max 300mW mW
DC Current Gain (hFE) (Min) 65 @ 15mA, 10V
Current - Collector (Ic) (Max) 25mA mA
Operating Temperature (Max) 150°C °C
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the BFR94AW,115 is determined by the following critical parameters:

Primary Substitution Criteria:

  • Transistor Type: NPN (mandatory match)
  • Voltage - Collector Emitter Breakdown (Max): 12V or higher (supports 15V applications)
  • Frequency - Transition: 5GHz or higher (maintains RF performance envelope)
  • Power - Max: 300mW or higher (supports thermal requirements)
  • Current - Collector (Ic) (Max): 25mA or higher (supports current demands)
  • Mounting Type: Surface Mount (maintains assembly compatibility)
  • Package / Case: SC-70/SOT-323 or equivalent surface mount packages
  • RoHS Status: ROHS3 Compliant (regulatory requirement)

Secondary Compatibility Factors:

  • Operating Temperature: 150°C maximum junction temperature
  • Noise Figure: Performance specification for RF applications
  • DC Current Gain (hFE): Gain characteristics for circuit biasing

The substitute parts listed below meet the primary substitution criteria and are classified as active products with current manufacturing status and documented inventory availability.

Parameter Comparison

Parameter BFR94AW,115 BFU520WX BFP193WH6327XTSA1 BFP620FH7764XTSA1 BFP843FH6327XTSA1 MAX2602ESA+T MCH4009-TL-H NSVF6003SB6T1G
Manufacturer NXP USA Inc. NXP USA Inc. Infineon Technologies Infineon Technologies Infineon Technologies Analog Devices Inc./Maxim Integrated onsemi onsemi
Transistor Type NPN NPN NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 15V 12V 12V 2.8V 2.25V 15V 3.5V 12V
Frequency - Transition 5GHz 10GHz 8GHz 65GHz 1GHz 25GHz 7GHz
Noise Figure (Typ) 2dB ~ 3dB @ 1GHz ~ 2GHz 0.6dB @ 900MHz 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz 0.8dB ~ 1.7dB @ 450MHz ~ 10GHz 3.3dB @ 836MHz 1.1dB @ 2GHz 3dB @ 1GHz
Power - Max 300mW 450mW 580mW 185mW 125mW 6.4W 120mW 800mW
DC Current Gain (hFE) (Min) 65 @ 15mA, 10V 60 @ 5mA, 8V 70 @ 30mA, 8V 110 @ 50mA, 1.5V 150 @ 15mA, 1.8V 100 @ 250mA, 3V 50 @ 5mA, 1V 100 @ 50mA, 5V
Current - Collector (Ic) (Max) 25mA 30mA 80mA 80mA 55mA 1.2A 40mA 150mA
Operating Temperature (Max) 150°C 150°C 150°C 150°C 150°C 150°C 150°C 150°C
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-82A, SOT-343 4-SMD, Flat Leads 4-SMD, Flat Leads 8-SOIC (0.154", 3.90mm Width) Exposed Pad SOT-343F SOT-23-6 Thin, TSOT-23-6
Product Status Obsolete Active Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

BFU520WX (NXP USA Inc.) and NSVF6003SB6T1G (onsemi) are the primary recommended substitutes for the BFR94AW,115. Both devices maintain the 12V minimum collector-emitter breakdown voltage specification, support frequencies at or above 5GHz (10GHz and 7GHz respectively), and provide power dissipation capabilities equal to or exceeding 300mW. Both are active products with current manufacturing status and ROHS3 compliance. The BFU520WX is qualified to AEC-Q101 automotive standards. The NSVF6003SB6T1G operates across an extended temperature range (-55°C to 150°C) and is also AEC-Q101 qualified.

Secondary Substitutes (Application-Dependent):

BFP193WH6327XTSA1 (Infineon Technologies) operates at 8GHz with 580mW power capability and 80mA maximum collector current, providing enhanced RF performance for higher-frequency applications. Package configuration differs (SOT-343 vs. SOT-323).

MCH4009-TL-H (onsemi) supports 25GHz operation with 120mW power dissipation, suitable for ultra-high-frequency applications requiring extended frequency response beyond the original 5GHz specification.

MAX2602ESA+T (Analog Devices Inc./Maxim Integrated) maintains 15V collector-emitter breakdown voltage matching and provides significantly higher power dissipation (6.4W) and collector current (1.2A), applicable to power amplification circuits. Package configuration is 8-SOIC-EP, requiring PCB layout modification.

Limited Compatibility Substitutes:

BFP620FH7764XTSA1 and BFP843FH6327XTSA1 (Infineon Technologies) operate at reduced collector-emitter breakdown voltages (2.8V and 2.25V respectively) and are suitable only for applications where the original 15V specification can be relaxed. These devices support ultra-high-frequency operation (65GHz and unspecified respectively) with reduced power dissipation.

All substitute parts maintain ROHS3 compliance, unlimited moisture sensitivity level (MSL 1), and maximum operating junction temperature of 150°C, ensuring regulatory and thermal compatibility with the original BFR94AW,115 specification.

Frequently Asked Questions (FAQ)

Q1: Can BFU520WX directly replace BFR94AW,115 in existing PCB designs?

BFU520WX is pin-compatible within the SC-70/SOT-323 package family and maintains equivalent electrical performance for the 5GHz operating frequency. However, the reduced collector-emitter breakdown voltage (12V vs. 15V) requires circuit analysis to confirm adequate voltage margin in the specific application. No PCB layout modification is required.

Q2: What is the primary difference between BFU520WX and NSVF6003SB6T1G as substitutes?

BFU520WX operates at 10GHz with 450mW power dissipation and standard temperature range (−40°C to 150°C). NSVF6003SB6T1G operates at 7GHz with 800mW power dissipation and extended temperature range (−55°C to 150°C). Both are AEC-Q101 qualified. Selection depends on frequency requirements and thermal operating environment. NSVF6003SB6T1G supports higher collector current (150mA vs. 30mA).

Q3: Why do BFP620FH7764XTSA1 and BFP843FH6327XTSA1 have lower collector-emitter breakdown voltages?

These devices are optimized for ultra-high-frequency operation (65GHz and extended frequency range respectively) and operate at reduced supply voltages. They are suitable only for applications where the circuit design accommodates 2.8V or 2.25V maximum collector-emitter voltage, respectively. These are not direct substitutes for 15V-rated applications.

Q4: Is MAX2602ESA+T suitable for direct PCB replacement?

MAX2602ESA+T requires PCB layout modification due to different package configuration (8-SOIC-EP vs. SC-70/SOT-323). The device is suitable for applications requiring significantly higher power dissipation (6.4W) and collector current (1.2A). Circuit redesign and thermal management evaluation are necessary.

Q5: What packaging considerations apply when selecting a substitute?

BFU520WX and NSVF6003SB6T1G maintain SC-70/SOT-323 and SOT-23-6 packages respectively, supporting direct PCB integration with minimal layout modification. BFP193WH6327XTSA1 uses SOT-343 package (similar footprint). BFP620FH7764XTSA1 and BFP843FH6327XTSA1 use 4-SMD flat lead packages requiring different PCB pad geometry. MAX2602ESA+T uses 8-SOIC-EP package requiring significant layout redesign.

Q6: Are all substitute parts ROHS3 compliant?

All listed substitute parts are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1), matching the regulatory status of the original BFR94AW,115 device.

Q7: Which substitute provides the best noise figure performance?

BFU520WX provides the lowest noise figure (0.6dB @ 900MHz), followed by BFP620FH7764XTSA1 (0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz) and BFP843FH6327XTSA1 (0.8dB ~ 1.7dB @ 450MHz ~ 10GHz). Selection depends on the specific frequency band and noise performance requirements of the application.

Q8: What is the inventory status of substitute parts?

BFU520WX: 3200 pcs available. BFP193WH6327XTSA1: 54065 pcs available. BFP620FH7764XTSA1: 5367 pcs available. BFP843FH6327XTSA1: 1285 pcs available. MAX2602ESA+T: 2963 pcs available. MCH4009-TL-H: 34540 pcs available. NSVF6003SB6T1G: 3406 pcs available. All parts are listed as new original stock.

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