BFP780H6327XTSA1 Equivalent & Substitute Parts

Part Overview

The BFP780H6327XTSA1 is an RF Transistor NPN manufactured by Infineon Technologies, designed for RF applications operating at 900MHz with a maximum power dissipation of 600mW. This device features a collector-emitter breakdown voltage of 6.1V and a maximum collector current of 120mA, packaged in SC-82A/SOT-343 surface mount configuration.

The BFP780H6327XTSA1 is classified as obsolete. Substitute parts are necessary to maintain design continuity and ensure availability for new production runs, repairs, and system upgrades where this RF transistor specification is required.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	-
Voltage - Collector Emitter Breakdown (Max)	6.1	V
Frequency - Transition	900	MHz
Noise Figure (Typ @ f)	1.2 ~ 2.4	dB @ 900MHz ~ 3.5GHz
Gain	27	dB
Power - Max	600	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	85	@ 90mA, 5V
Current - Collector (Ic) (Max)	120	mA
Operating Temperature (TJ)	150	°C
Mounting Type	Surface Mount	-
Package / Case	SC-82A, SOT-343	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the BFP780H6327XTSA1 is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor Type: NPN configuration required
Voltage Rating: Collector-emitter breakdown voltage must meet or exceed 6.1V
Frequency Performance: Transition frequency must support 900MHz operation
Power Dissipation: Maximum power rating must accommodate 600mW or greater
Current Handling: Collector current capability must support 120mA maximum
Mounting Type: Surface mount configuration required
Package Compatibility: Physical dimensions and pin configuration must be compatible with PCB layout

Compliance Requirements:

RoHS3 compliance mandatory
MSL rating of 1 (Unlimited) preferred
Operating temperature range must include 150°C junction temperature

The substitute parts listed below meet these criteria with varying degrees of parameter overlap. Selection depends on specific circuit requirements and available inventory.

Parameter Comparison

Parameter	BFP780H6327XTSA1	2SC4713KT146R	MAX2601ESA+	SMMBTH10-4LT3G
Manufacturer	Infineon Technologies	Rohm Semiconductor	Analog Devices Inc./Maxim Integrated	onsemi
Product Status	Obsolete	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	6.1V	6V	15V	25V
Frequency - Transition	900MHz	800MHz	1GHz	800MHz
Noise Figure (Typ @ f)	1.2 ~ 2.4 dB @ 900MHz ~ 3.5GHz	Not specified	3.3dB @ 836MHz	Not specified
Gain	27dB	Not specified	11.6dB	Not specified
Power - Max	600mW	200mW	6.4W	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	85 @ 90mA, 5V	180 @ 5mA, 5V	100 @ 250mA, 3V	120 @ 4mA, 10V
Current - Collector (Ic) (Max)	120mA	50mA	1.2A	Not specified
Operating Temperature (TJ)	150°C	150°C	150°C	-55°C ~ 150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SC-82A, SOT-343	TO-236-3, SC-59, SOT-23-3	8-SOIC (0.154", 3.90mm Width) Exposed Pad	TO-236-3, SC-59, SOT-23-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Inventory Status	17400 Pcs New Original In Stock	1745 Pcs New Original In Stock	2300 Pcs New Original In Stock	994 Pcs New Original In Stock

Engineering Selection Recommendations

2SC4713KT146R (Rohm Semiconductor)

This substitute operates at 800MHz transition frequency with a 6V collector-emitter breakdown voltage. Maximum power dissipation is 200mW, which is lower than the original BFP780H6327XTSA1. Maximum collector current is 50mA, significantly below the 120mA specification of the main part. This device is suitable for lower-power RF applications where the reduced current and power ratings are acceptable. The part is active and ROHS3 compliant with unlimited MSL rating.

MAX2601ESA+ (Analog Devices Inc./Maxim Integrated)

This substitute features a 15V collector-emitter breakdown voltage and 1GHz transition frequency, exceeding the original specifications. Maximum power dissipation is 6.4W and maximum collector current is 1.2A, both substantially higher than the BFP780H6327XTSA1. This device is suitable for higher-power RF applications requiring greater voltage and current headroom. The part is active and ROHS3 compliant with unlimited MSL rating. Package configuration differs (8-SOIC-EP versus SOT-343), requiring PCB layout modification.

SMMBTH10-4LT3G (onsemi)

This substitute operates at 800MHz transition frequency with a 25V collector-emitter breakdown voltage. Maximum power dissipation is 225mW, lower than the original specification. Collector current specification is not provided in the available data. This device is suitable for applications requiring higher voltage tolerance. The part is active and ROHS3 compliant with unlimited MSL rating. Operating temperature range extends to -55°C, providing broader environmental capability.

All substitute parts maintain ROHS3 compliance and MSL rating of 1 (Unlimited), ensuring regulatory and handling compatibility with the original BFP780H6327XTSA1.

Frequently Asked Questions (FAQ)

Q: Can the 2SC4713KT146R directly replace the BFP780H6327XTSA1 in all applications?

A: The 2SC4713KT146R has reduced power (200mW vs. 600mW) and current (50mA vs. 120mA) ratings. Direct substitution is limited to applications where these lower specifications are acceptable. Frequency performance at 800MHz is slightly below the original 900MHz specification.

Q: What are the package differences between substitute parts?

A: The BFP780H6327XTSA1 uses SC-82A/SOT-343 packaging. The 2SC4713KT146R and SMMBTH10-4LT3G use TO-236-3/SC-59/SOT-23-3 packages, which have different physical dimensions and pin configurations. The MAX2601ESA+ uses 8-SOIC-EP packaging, requiring significant PCB layout changes. Package compatibility must be verified before substitution.

Q: Is the MAX2601ESA+ suitable for all BFP780H6327XTSA1 applications?

A: The MAX2601ESA+ exceeds the original specifications in voltage (15V vs. 6.1V), frequency (1GHz vs. 900MHz), power (6.4W vs. 600mW), and current (1.2A vs. 120mA). It is suitable for applications requiring higher performance margins. However, the different package (8-SOIC-EP) requires PCB redesign and may introduce different thermal characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (2SC4713KT146R, MAX2601ESA+, and SMMBTH10-4LT3G) are ROHS3 compliant with MSL rating of 1 (Unlimited), matching the original BFP780H6327XTSA1 compliance profile.

Q: What is the primary limitation of the 2SC4713KT146R as a substitute?

A: The 2SC4713KT146R has maximum power dissipation of 200mW, which is one-third of the original 600mW specification. Applications requiring full power handling capability cannot use this substitute without circuit redesign.

Q: Can the SMMBTH10-4LT3G handle the full 120mA collector current of the original part?

A: The maximum collector current specification for the SMMBTH10-4LT3G is not provided in the available technical data. Current handling capability must be verified against detailed device specifications before substitution in high-current applications.

Q: What is the frequency performance difference between substitutes?

A: The BFP780H6327XTSA1 operates at 900MHz. The 2SC4713KT146R and SMMBTH10-4LT3G both operate at 800MHz, representing a 100MHz reduction. The MAX2601ESA+ operates at 1GHz, exceeding the original specification by 100MHz.

Q: Are there thermal considerations when substituting these parts?

A: The MAX2601ESA+ features an exposed pad (8-SOIC-EP) for enhanced thermal dissipation, suitable for high-power applications. The 2SC4713KT146R and SMMBTH10-4LT3G use smaller packages with reduced thermal capability. Thermal design must be verified for each substitute based on actual power dissipation in the target application.

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