BFP 650F E6327 Equivalent & Substitute Parts

Part Overview

The BFP 650F E6327 is an RF transistor manufactured by Infineon Technologies, classified as a bipolar NPN transistor designed for high-frequency applications. This component operates at a maximum collector-emitter voltage of 4.5V with a transition frequency of 42GHz and maximum power dissipation of 500mW in a 4-TSFP surface mount package.

The BFP 650F E6327 is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or repair requirements for systems utilizing this component.

Substiute Parts

BFP 650F E6327
Infineon TechnologiesIn Stock: 935BFP 650F E6327 Datasheet
BFP 650F E6327
Current Part
BFP650H6327XTSA1
Infineon TechnologiesIn Stock: 7298BFP650H6327XTSA1 Datasheet
BFP650H6327XTSA1
Direct
BFS17NTA
Diodes IncorporatedIn Stock: 15179BFS17NTA Datasheet
BFS17NTA
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4.5 V
Frequency - Transition 42 GHz
Noise Figure (Typ @ 1.8GHz ~ 6GHz) 0.8 ~ 1.9 dB
Gain 11 ~ 21.5 dB
Power - Max 500 mW
DC Current Gain (hFE) @ 80mA, 3V 110 Min
Current - Collector (Ic) Max 150 mA
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads (4-TSFP)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the BFP 650F E6327 is determined by strict alignment of electrical and mechanical parameters within the RF transistor category. The following criteria establish valid substitute relationships:

Primary Substitution Criteria:

  • Transistor Type: NPN configuration required
  • Voltage Rating: Collector-Emitter breakdown voltage must equal or exceed 4.5V
  • Frequency Performance: Transition frequency must support the intended RF application bandwidth
  • Power Dissipation: Maximum power rating must equal or exceed 500mW
  • Current Capability: Collector current (Ic) must equal or exceed 150mA
  • DC Gain: hFE minimum must equal or exceed 110 at specified bias conditions
  • Mounting Type: Surface mount configuration required
  • Noise Figure: Performance within 0.8dB ~ 1.9dB range at 1.8GHz ~ 6GHz preferred for RF applications
  • Moisture Sensitivity: MSL rating of 1 (Unlimited) required

Identified Substitute Parts:

  1. BFP650H6327XTSA1 (Infineon Technologies) — Direct manufacturer equivalent with reduced transition frequency (37GHz vs. 42GHz) but maintains all critical electrical parameters and base product lineage.

  2. BFS17NTA (Diodes Incorporated) — Manufacturer-recommended alternative with different electrical characteristics, including higher voltage rating (11V), lower frequency (3.2GHz), and reduced current/power specifications.

Parameter Comparison

Parameter BFP 650F E6327 BFP650H6327XTSA1 BFS17NTA
Manufacturer Infineon Technologies Infineon Technologies Diodes Incorporated
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.5V 4.5V 11V
Frequency - Transition 42GHz 37GHz 3.2GHz
Noise Figure (dB Typ @ 1.8GHz ~ 6GHz) 0.8 ~ 1.9 0.8 ~ 1.9
Gain (dB) 11 ~ 21.5 10.5 ~ 21.5
Power - Max 500mW 500mW 330mW
DC Current Gain (hFE) Min @ Ic, Vce 110 @ 80mA, 3V 110 @ 80mA, 3V 56 @ 5mA, 10V
Current - Collector (Ic) Max 150mA 150mA 50mA
Operating Temperature (TJ) 150°C 150°C -55°C ~ 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 4-SMD, Flat Leads (4-TSFP) SC-82A, SOT-343 TO-236-3, SC-59, SOT-23-3
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

BFP650H6327XTSA1 Selection Criteria:

The BFP650H6327XTSA1 is the primary substitute for the obsolete BFP 650F E6327. Both components share the same base product number (BFP650) and are manufactured by Infineon Technologies. This substitute maintains electrical parameter compatibility across voltage rating (4.5V), power dissipation (500mW), collector current (150mA), and DC gain (hFE 110 @ 80mA, 3V). The transition frequency is reduced from 42GHz to 37GHz; this difference must be evaluated against specific circuit bandwidth requirements. The BFP650H6327XTSA1 is currently in active production status with ROHS3 compliance certification. Package configuration differs (SOT-343 vs. 4-TSFP), requiring PCB layout modification. This substitute is suitable for applications where the 37GHz frequency specification meets design requirements.

BFS17NTA Selection Criteria:

The BFS17NTA is designated as a manufacturer-recommended alternative by Diodes Incorporated. This substitute exhibits significant electrical parameter differences: voltage rating increases to 11V, transition frequency decreases to 3.2GHz, collector current reduces to 50mA, and power dissipation decreases to 330mW. The DC gain (hFE 56 @ 5mA, 10V) is substantially lower than the original specification. The BFS17NTA is suitable only for applications operating at lower frequencies (below 3.2GHz) with reduced current and power requirements. Package configuration is SOT-23-3, requiring substantial PCB redesign. This substitute is appropriate for low-frequency RF applications where the original 42GHz specification is not required.

Both substitute parts maintain MSL 1 (Unlimited) moisture sensitivity rating and REACH compliance status. Selection between substitutes depends on frequency bandwidth requirements and circuit current/power specifications.

Frequently Asked Questions (FAQ)

Q1: Can the BFP650H6327XTSA1 directly replace the BFP 650F E6327 without circuit modification?

A: The BFP650H6327XTSA1 maintains electrical parameter compatibility (voltage, current, power, gain) with the BFP 650F E6327. However, the transition frequency is reduced from 42GHz to 37GHz. Circuit modification is not required if the application bandwidth does not exceed 37GHz. Package configuration differs (SOT-343 vs. 4-TSFP), requiring PCB layout changes. Verify frequency specifications against circuit requirements before implementation.

Q2: What are the key differences between BFP650H6327XTSA1 and BFS17NTA?

A: Both are active-status substitutes for the obsolete BFP 650F E6327. The BFP650H6327XTSA1 maintains high-frequency RF performance (37GHz) with equivalent current and power ratings. The BFS17NTA operates at significantly lower frequency (3.2GHz) with reduced current (50mA vs. 150mA) and power (330mW vs. 500mW) specifications. Selection depends on application frequency requirements. The BFP650H6327XTSA1 is preferred for high-frequency RF circuits; the BFS17NTA is suitable for low-frequency applications.

Q3: Is package compatibility a concern when substituting these parts?

A: Yes. The BFP 650F E6327 uses a 4-TSFP package (4-SMD, Flat Leads). The BFP650H6327XTSA1 uses SOT-343 (SC-82A) packaging, and the BFS17NTA uses SOT-23-3 (TO-236-3, SC-59) packaging. Each package has different pin configurations and footprints. PCB layout modification is required for any substitution. Verify package dimensions and pin assignments against PCB design before component selection.

Q4: Are there compliance or regulatory differences between the original part and substitutes?

A: The BFP 650F E6327 product status is listed as obsolete with no RoHS status specified. Both substitutes (BFP650H6327XTSA1 and BFS17NTA) are active-status components with ROHS3 compliance certification. All three parts maintain REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity rating. The substitutes meet current regulatory requirements for new designs.

Q5: What is the primary criterion for selecting between the two substitute parts?

A: The primary selection criterion is application frequency bandwidth. The BFP650H6327XTSA1 supports frequencies up to 37GHz and is suitable for high-frequency RF applications. The BFS17NTA operates at 3.2GHz maximum and is suitable for low-frequency RF applications. Evaluate circuit frequency requirements against each substitute's transition frequency specification. If the application requires frequencies above 3.2GHz, the BFP650H6327XTSA1 is the appropriate choice.

Q6: Can the BFS17NTA be used in circuits designed for the BFP 650F E6327?

A: The BFS17NTA can be used only if circuit frequency requirements do not exceed 3.2GHz and if current/power specifications are reduced to 50mA and 330mW respectively. The original BFP 650F E6327 specification supports 150mA and 500mW. The BFS17NTA is not a direct functional replacement for high-frequency or high-power RF applications. Circuit redesign and performance verification are required.

Request Quote (Ships tomorrow)