BFP650E6327HTSA1 Equivalent & Substitute Parts

Part Overview

The BFP650E6327HTSA1 is an RF Transistor NPN surface mount device manufactured by Infineon Technologies, designed for high-frequency applications up to 37GHz with a maximum power rating of 500mW. This part operates at a collector-emitter breakdown voltage of 4.5V and supports a maximum collector current of 150mA. The device is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and procurement continuity.

Substiute Parts

BFP650E6327HTSA1

Infineon TechnologiesIn Stock: 1191BFP650E6327HTSA1 Datasheet

Current PartRFQ

BFU690F,115

NXP USA Inc.In Stock: 36429BFU690F,115 Datasheet

MFR RecommendedRFQ

MAPRST0912-50

MACOM Technology SolutionsIn Stock: 1130MAPRST0912-50 Datasheet

MFR RecommendedRFQ

NSVF6003SB6T1G

onsemiIn Stock: 3489NSVF6003SB6T1G Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BFP650E6327HTSA1 is determined by alignment of the following critical parameters:

Primary Substitution Criteria:

• Transistor Type: NPN configuration required
• Voltage Rating: Collector-emitter breakdown voltage must meet or exceed application requirements
• Frequency Performance: Transition frequency must support target RF operating band
• Power Dissipation: Maximum power rating must accommodate circuit power levels
• Current Capability: Maximum collector current must support circuit bias and signal requirements
• Mounting Type: Surface mount configuration for PCB compatibility
• Package Compatibility: Physical form factor and pin configuration

The three substitute parts listed below meet varying degrees of these criteria based on their specified electrical and mechanical parameters.

Parameter Comparison

Engineering Selection Recommendations

BFU690F,115 (NXP USA Inc.): This part is the closest functional equivalent for applications requiring surface mount RF transistor performance in the microwave frequency range. It maintains NPN configuration, similar voltage rating (5.5V vs 4.5V), and comparable collector current capability (100mA vs 150mA). The transition frequency of 18GHz is lower than the original part, making it suitable for applications operating below 18GHz. The device is in active production status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Package compatibility is maintained through SOT-343F form factor.

NSVF6003SB6T1G (onsemi): This part provides an alternative for applications with lower frequency requirements (7GHz transition frequency) but offers higher power dissipation capability (800mW vs 500mW) and extended operating temperature range (-55°C to 150°C). It maintains surface mount configuration and NPN transistor type with matching collector current (150mA). The device includes AEC-Q101 automotive qualification and ROHS3 compliance. Package form factor differs (SOT-23-6 Thin vs SOT-343), requiring PCB layout modification.

MAPRST0912-50 (MACOM Technology Solutions): This part represents a significant departure from the original specification, featuring chassis mount configuration rather than surface mount, substantially higher voltage rating (65V vs 4.5V), and dramatically higher power capability (50W vs 500mW). It is suitable only for applications with fundamentally different electrical requirements and physical integration constraints. Transition frequency is not specified. This part is not recommended as a direct substitute for the BFP650E6327HTSA1 in standard RF applications.

Frequently Asked Questions (FAQ)

Q: Can BFU690F,115 directly replace BFP650E6327HTSA1 in all applications?

A: BFU690F,115 is suitable for applications operating at transition frequencies of 18GHz or below. The lower frequency capability and reduced maximum collector current (100mA vs 150mA) must be verified against circuit requirements. Package compatibility is maintained through similar SOT-343 form factors.

Q: What is the primary limitation of NSVF6003SB6T1G as a substitute?

A: The primary limitation is package form factor difference (SOT-23-6 Thin vs SOT-343), which requires PCB layout redesign. Additionally, the 7GHz transition frequency limits application to lower frequency RF circuits compared to the original 37GHz specification.

Q: Why is MAPRST0912-50 listed as a substitute if it has different mounting type?

A: MAPRST0912-50 is listed based on the provided substitute list but is not recommended for direct replacement due to fundamental differences in mounting configuration (chassis mount vs surface mount), voltage rating (65V vs 4.5V), and power capability (50W vs 500mW). It serves applications with entirely different electrical and mechanical requirements.

Q: Are all substitute parts ROHS3 compliant?

A: BFU690F,115, MAPRST0912-50, and NSVF6003SB6T1G are all ROHS3 compliant. The original BFP650E6327HTSA1 does not specify RoHS status. All parts maintain MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the impact of voltage rating differences on substitution?

A: The original part operates at 4.5V maximum collector-emitter breakdown voltage. BFU690F,115 (5.5V) and NSVF6003SB6T1G (12V) have higher voltage ratings, which is acceptable for lower-voltage applications. MAPRST0912-50 (65V) is designed for significantly higher voltage circuits and is not suitable for low-voltage RF applications.

Q: How do noise figure specifications compare across substitute parts?

A: The original BFP650E6327HTSA1 specifies noise figure of 0.8dB to 1.9dB at 1.8GHz to 6GHz. BFU690F,115 specifies 0.6dB to 0.7dB at 1.5GHz to 2.4GHz, indicating lower noise performance in its operating band. NSVF6003SB6T1G specifies 3dB at 1GHz. MAPRST0912-50 does not provide noise figure specification.