BFP 196R E6501 Equivalent & Substitute Parts

Part Overview

The BFP 196R E6501 is an RF transistor NPN type manufactured by Infineon Technologies, designed for high-frequency applications up to 7.5GHz. This device operates at 12V collector-emitter breakdown voltage with a maximum power dissipation of 700mW and is housed in a SOT-143-4 surface mount package. The product is currently classified as obsolete, making identification of suitable substitute components essential for ongoing design support, maintenance, and production continuity. Substitute parts must maintain functional equivalence within the RF frequency range and thermal operating parameters while accommodating available inventory and active product status.

Substiute Parts

BFP 196R E6501
Infineon TechnologiesIn Stock: 1094BFP 196R E6501 Datasheet
BFP 196R E6501
Current Part
MMBTH10-TP
Micro Commercial CoIn Stock: 4106MMBTH10-TP Datasheet
MMBTH10-TP
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V V
Frequency - Transition 7.5GHz GHz
Power - Max 700mW mW
Current - Collector (Ic) (Max) 150mA mA
DC Current Gain (hFE) (Min) 70 @ 50mA, 8V
Operating Temperature (Max) 150°C °C
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA

Substitute Part Grouping Explanation

Substitution of the BFP 196R E6501 is determined by the following critical electrical and mechanical parameters:

Transistor Configuration: NPN type is mandatory for functional equivalence in RF amplification circuits.

Voltage Rating: The 12V collector-emitter breakdown voltage establishes the maximum operating voltage. Substitute parts with equal or higher voltage ratings (such as 25V) are acceptable as they provide design margin without compromising performance in 12V circuits.

Frequency Performance: The 7.5GHz transition frequency defines the upper frequency limit for RF applications. Substitute parts operating at lower frequencies (such as 650MHz) are restricted to lower-frequency RF applications and cannot be used in circuits requiring 7.5GHz performance.

Power Dissipation: The 700mW maximum power rating establishes thermal requirements. Substitute parts with lower power ratings (such as 225mW) require circuit redesign to reduce dissipation or are unsuitable for high-power applications.

Current Handling: The 150mA maximum collector current defines current capacity. Substitute parts with lower ratings (such as 50mA) cannot support equivalent current levels.

Package Compatibility: Surface mount packaging is required. Package footprint differences (SOT-143-4 versus SOT-23) necessitate PCB redesign.

Product Status: The obsolete status of BFP 196R E6501 contrasts with active product status of MMBTH10-TP, ensuring long-term availability for substitute selection.

Parameter Comparison

Parameter BFP 196R E6501 MMBTH10-TP Compatibility Notes
Transistor Type NPN NPN Matched
Voltage - Collector Emitter Breakdown (Max) 12V 25V Substitute rated higher; acceptable for 12V circuits
Frequency - Transition 7.5GHz 650MHz Substitute limited to lower frequencies
Power - Max 700mW 225mW Substitute has reduced power capacity
Current - Collector (Ic) (Max) 150mA 50mA Substitute has reduced current capacity
DC Current Gain (hFE) (Min) 70 @ 50mA, 8V 60 @ 4mA, 10V Measured at different operating points
Operating Temperature (Max) 150°C 150°C Matched
Mounting Type Surface Mount Surface Mount Matched
Package / Case TO-253-4, TO-253AA TO-236-3, SC-59, SOT-23-3 Different footprints; PCB redesign required
Product Status Obsolete Active Substitute ensures long-term availability
RoHS Status Not specified ROHS3 Compliant Substitute meets current environmental standards

Engineering Selection Recommendations

Substitution Feasibility: MMBTH10-TP is listed as the manufacturer-recommended substitute for BFP 196R E6501. However, direct substitution is limited by frequency and power specifications.

Frequency Limitation: MMBTH10-TP operates at 650MHz transition frequency, which is significantly lower than the 7.5GHz specification of BFP 196R E6501. This substitute is suitable only for RF applications operating below 650MHz. Applications requiring 7.5GHz performance cannot use MMBTH10-TP without circuit redesign or alternative component selection.

Power and Current Derating: MMBTH10-TP has maximum power dissipation of 225mW and maximum collector current of 50mA, compared to 700mW and 150mA for BFP 196R E6501. Circuit designs must be evaluated to ensure operation within these reduced limits.

Voltage Margin: The 25V collector-emitter breakdown voltage of MMBTH10-TP exceeds the 12V requirement, providing adequate voltage margin for 12V circuit operation.

Package Transition: Substitution requires PCB redesign due to different package footprints (SOT-143-4 to SOT-23). Layout modifications and re-qualification testing are necessary.

Compliance Status: MMBTH10-TP holds active product status and ROHS3 compliance, ensuring regulatory alignment and long-term supply availability compared to the obsolete BFP 196R E6501.

Inventory Availability: MMBTH10-TP has 4027 pieces in stock versus 1063 pieces for BFP 196R E6501, supporting production continuity.

Frequently Asked Questions (FAQ)

Q: Can MMBTH10-TP directly replace BFP 196R E6501 in existing designs?

A: Direct replacement is not recommended without circuit evaluation. While both are NPN RF transistors in surface mount packages, MMBTH10-TP has lower frequency (650MHz vs. 7.5GHz), power (225mW vs. 700mW), and current (50mA vs. 150mA) ratings. Additionally, the different package footprints (SOT-23 vs. SOT-143-4) require PCB redesign. Applications operating below 650MHz with reduced power and current requirements may use MMBTH10-TP after circuit validation.

Q: What are the key electrical differences between these parts?

A: The primary differences are transition frequency (7.5GHz vs. 650MHz), maximum power dissipation (700mW vs. 225mW), and maximum collector current (150mA vs. 50mA). Both devices share NPN configuration, 150°C maximum operating temperature, and surface mount technology. MMBTH10-TP has higher voltage rating (25V vs. 12V), which is not a limitation for 12V circuit operation.

Q: Is package compatibility an issue?

A: Yes. BFP 196R E6501 uses TO-253-4 (SOT-143-4) package, while MMBTH10-TP uses TO-236-3 (SOT-23-3) package. These have different footprints and pin configurations. PCB layout modification is required for substitution.

Q: What applications are suitable for MMBTH10-TP as a substitute?

A: MMBTH10-TP is suitable for RF applications operating at frequencies up to 650MHz with power dissipation not exceeding 225mW and collector current not exceeding 50mA. Applications requiring 7.5GHz performance or higher power/current levels require alternative components.

Q: Are there compliance or supply chain advantages to using MMBTH10-TP?

A: Yes. MMBTH10-TP has active product status (versus obsolete for BFP 196R E6501), ROHS3 compliance certification, and higher inventory availability (4027 vs. 1063 pieces). These factors support long-term design sustainability and regulatory alignment.

Q: What testing is required before implementing MMBTH10-TP as a substitute?

A: Circuit performance validation is necessary to confirm operation within the reduced frequency, power, and current specifications of MMBTH10-TP. PCB layout must be redesigned for the different package footprint. Thermal analysis should verify that 225mW maximum power dissipation is not exceeded under worst-case operating conditions.

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