BF820W,115 Equivalent & Substitute Parts

Part Overview

The BF820W,115 is an NPN bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the SOT-323 package. This device operates at 300 V collector-emitter breakdown voltage with a maximum collector current of 50 mA and 200 mW power dissipation. The part is actively produced, carries AEC-Q101 automotive qualification, and maintains ROHS3 compliance. Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to supply constraints, design flexibility, or manufacturing transitions.

Substiute Parts

BF820W,115
Nexperia USA Inc.In Stock: 2985BF820W,115 Datasheet
BF820W,115
Current Part
BF820W,135
NXP USA Inc.In Stock: 56763BF820W,135 Datasheet
BF820W,135
Parametric Equivalent
MSD42WT1G
onsemiIn Stock: 98441MSD42WT1G Datasheet
MSD42WT1G
Direct
MMSTA42-7-F
Diodes IncorporatedIn Stock: 9728MMSTA42-7-F Datasheet
MMSTA42-7-F
Similar
MMSTA42-TP
Micro Commercial CoIn Stock: 8730MMSTA42-TP Datasheet
MMSTA42-TP
Similar
MSD42SWT1G
onsemiIn Stock: 12270MSD42SWT1G Datasheet
MSD42SWT1G
Similar

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 300 V
Current - Collector (Ic) (Max) 50 mA
Power - Max 200 mW
Frequency - Transition 60 MHz
Operating Temperature (Max) 150 °C
Package / Case SC-70, SOT-323
Mounting Type Surface Mount
Grade Automotive
Qualification AEC-Q101

Substitute Part Grouping Explanation

Substitute parts for the BF820W,115 are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalent (Direct Substitution): BF820W,135 shares identical electrical specifications with the main part, including 300 V breakdown voltage, 50 mA maximum collector current, 200 mW power rating, and 60 MHz transition frequency. The only difference is packaging format (Bulk versus Tape & Reel). This part maintains the same SOT-323 package footprint and is manufactured by the same supplier family (NXP/Nexperia).

Direct Manufacturer Alternatives (Higher Current Rating): MSD42WT1G and MSD42SWT1G are manufactured by onsemi and feature the same 300 V breakdown voltage and SOT-323 package. These devices support higher collector current (150 mA) and lower power dissipation (150 mW), making them suitable for applications requiring increased current capacity within the same voltage and package constraints.

Similar Alternatives (Higher Current, Different Manufacturer): MMSTA42-7-F and MMSTA42-TP are manufactured by Diodes Incorporated and Micro Commercial Co respectively. Both support 300 V breakdown voltage, 200 mA collector current, 200 mW power rating, and SOT-323 package. These parts operate across an extended temperature range (−55°C to 150°C) compared to the main part's 150°C maximum.

Substitution eligibility is determined by: (1) matching or exceeding voltage rating (300 V minimum), (2) collector current capacity equal to or greater than 50 mA, (3) identical or compatible package (SOT-323), and (4) surface mount mounting type.

Parameter Comparison

Parameter BF820W,115 BF820W,135 MSD42WT1G MSD42SWT1G MMSTA42-7-F MMSTA42-TP
Manufacturer Nexperia USA Inc. NXP USA Inc. onsemi onsemi Diodes Incorporated Micro Commercial Co
Transistor Type NPN NPN NPN NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V 300 V 300 V 300 V
Current - Collector (Ic) (Max) 50 mA 50 mA 150 mA 150 mA 200 mA 200 mA
Power - Max 200 mW 200 mW 150 mW 150 mW 200 mW 200 mW
Frequency - Transition 60 MHz 60 MHz 50 MHz 50 MHz
Operating Temperature (Max) 150°C 150°C 150°C 150°C 150°C 150°C
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

BF820W,135: This part is the primary equivalent substitute for the BF820W,115. Both devices are manufactured within the NXP/Nexperia family, carry identical electrical specifications, and maintain AEC-Q101 automotive qualification. The only distinction is packaging format (Bulk versus Tape & Reel). Selection of BF820W,135 is appropriate when supply of the tape and reel variant is constrained and bulk packaging is acceptable for the manufacturing process.

MSD42WT1G and MSD42SWT1G: These onsemi alternatives are suitable when higher collector current capacity (150 mA versus 50 mA) is required within the same 300 V voltage envelope and SOT-323 package. Both parts maintain ROHS3 compliance and MSL Level 1 rating. MSD42WT1G is supplied in Tape & Reel format, while MSD42SWT1G is also available in Tape & Reel. These parts do not carry explicit automotive qualification documentation in the provided specifications.

MMSTA42-7-F and MMSTA42-TP: These alternatives from Diodes Incorporated and Micro Commercial Co support the highest collector current rating (200 mA) while maintaining 300 V breakdown voltage and SOT-323 package compatibility. Both parts are ROHS3 compliant with MSL Level 1 rating and operate across an extended temperature range (−55°C to 150°C). These parts do not carry explicit automotive qualification documentation in the provided specifications.

Selection among substitute parts depends on application requirements for collector current capacity, supply availability, and automotive qualification necessity. All listed substitutes maintain the same package footprint and surface mount compatibility.

Frequently Asked Questions (FAQ)

Q: Can BF820W,135 be used as a direct replacement for BF820W,115?

A: Yes. BF820W,135 is a parametric equivalent with identical electrical specifications: 300 V breakdown voltage, 50 mA maximum collector current, 200 mW power rating, 60 MHz transition frequency, and SOT-323 package. The difference is packaging format (Bulk versus Tape & Reel). Both parts are manufactured by NXP/Nexperia and carry AEC-Q101 automotive qualification.

Q: What is the primary difference between the main part and the onsemi alternatives (MSD42WT1G, MSD42SWT1G)?

A: The onsemi parts support higher collector current (150 mA versus 50 mA) while maintaining the same 300 V breakdown voltage and SOT-323 package. Power dissipation is lower (150 mW versus 200 mW). These parts are suitable for applications requiring increased current capacity within the same voltage and package constraints.

Q: Are MMSTA42-7-F and MMSTA42-TP suitable for automotive applications?

A: Both MMSTA42-7-F and MMSTA42-TP are ROHS3 compliant with MSL Level 1 rating and operate across an extended temperature range (−55°C to 150°C). However, explicit automotive qualification (AEC-Q101) is not documented in the provided specifications. Verification of automotive suitability against specific design requirements is necessary.

Q: Do all substitute parts use the same SOT-323 package?

A: Yes. All listed substitute parts (BF820W,135, MSD42WT1G, MSD42SWT1G, MMSTA42-7-F, MMSTA42-TP) use the SC-70 SOT-323 package with surface mount mounting type. PCB footprint compatibility is maintained across all alternatives.

Q: What is the maximum collector current I can use with each part?

A: BF820W,115 and BF820W,135 support 50 mA maximum. MSD42WT1G and MSD42SWT1G support 150 mA maximum. MMSTA42-7-F and MMSTA42-TP support 200 mA maximum. All parts maintain 300 V breakdown voltage rating.

Q: Are there differences in transition frequency among the substitute parts?

A: Yes. BF820W,115 and BF820W,135 specify 60 MHz transition frequency. MMSTA42-7-F and MMSTA42-TP specify 50 MHz. MSD42WT1G and MSD42SWT1G do not provide transition frequency specifications in the available data.

Q: What is the operating temperature range for each part?

A: BF820W,115, BF820W,135, MSD42WT1G, and MSD42SWT1G specify a maximum operating temperature of 150°C. MMSTA42-7-F and MMSTA42-TP operate across −55°C to 150°C, providing extended low-temperature capability.

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