BF776E6327FTSA1 Equivalent & Substitute Parts

Part Overview

The BF776E6327FTSA1 is an RF transistor NPN manufactured by Infineon Technologies, designed for high-frequency applications up to 46GHz with a maximum power dissipation of 200mW. This component is classified as obsolete, making identification of functionally compatible alternatives essential for ongoing design support and production continuity. The part operates at a collector-emitter breakdown voltage of 4.7V and is packaged in a surface mount SC-82A/SOT-343 configuration.

Substiute Parts

BF776E6327FTSA1
Infineon TechnologiesIn Stock: 1131BF776E6327FTSA1 Datasheet
BF776E6327FTSA1
Current Part
KSP10BU
Fairchild SemiconductorIn Stock: 124127KSP10BU Datasheet
KSP10BU
MFR Recommended

Key Parameters

Parameter Value Unit
Manufacturer Part Number BF776E6327FTSA1
Manufacturer Infineon Technologies
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4.7 V
Frequency - Transition 46 GHz
Power - Max 200 mW
Current - Collector (Ic) (Max) 50 mA
DC Current Gain (hFE) (Min) 180 @ 30mA, 3V
Noise Figure (dB Typ) 0.8–1.3 dB @ 1.8–6GHz
Gain 24 dB
Operating Temperature (TJ) 150 °C
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Product Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the BF776E6327FTSA1 is constrained by its specialized RF performance characteristics. The primary substitute identified is the KSP10BU, manufactured by Fairchild Semiconductor. However, this substitution involves significant parameter trade-offs that must be evaluated against application requirements.

The substitution logic is based on the following criteria:

Transistor Type Compatibility: Both parts are NPN bipolar junction transistors, establishing the fundamental functional category match.

Voltage Rating: The BF776E6327FTSA1 operates at a maximum collector-emitter breakdown voltage of 4.7V, while the KSP10BU is rated at 25V. The KSP10BU's higher voltage rating provides design margin but does not establish a direct electrical equivalence.

Frequency Performance: The BF776E6327FTSA1 is specified for transition frequency of 46GHz, optimized for millimeter-wave RF applications. The KSP10BU operates at 650MHz, representing a frequency capability reduction of approximately 70 times. This parameter difference is fundamental and application-dependent.

Power Dissipation: The BF776E6327FTSA1 is rated for 200mW maximum power, while the KSP10BU is rated for 350mW. The higher power rating of the substitute does not compensate for frequency performance differences.

Packaging: The BF776E6327FTSA1 uses surface mount SOT-343 packaging, while the KSP10BU uses through-hole TO-92-3 packaging. This represents a significant mechanical and assembly incompatibility requiring circuit board redesign.

Current Gain: The BF776E6327FTSA1 specifies a minimum DC current gain (hFE) of 180 at 30mA/3V, while the KSP10BU specifies 60 at 4mA/10V. Direct gain comparison is not applicable due to different measurement conditions.

Parameter Comparison

Parameter BF776E6327FTSA1 KSP10BU Unit
Manufacturer Infineon Technologies Fairchild Semiconductor
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 4.7 25 V
Frequency - Transition 46 0.65 GHz
Power - Max 200 350 mW
Operating Temperature (TJ) 150 150 °C
Mounting Type Surface Mount Through Hole
Package / Case SOT-343 TO-92-3
Product Status Obsolete Active

Engineering Selection Recommendations

The KSP10BU is identified as a manufacturer-recommended substitute for the BF776E6327FTSA1 based on active product status and general NPN transistor category alignment. However, the following engineering considerations apply:

Product Status: The BF776E6327FTSA1 is obsolete, while the KSP10BU is active. Selection of the KSP10BU addresses long-term supply chain continuity.

Compliance and Certifications: Both parts carry ECCN classification EAR99 and are subject to applicable export control regulations. The BF776E6327FTSA1 carries REACH Unaffected status. The KSP10BU's REACH compliance status is not provided in the available data.

Application-Specific Evaluation: The 70-fold reduction in transition frequency from 46GHz to 650MHz represents a fundamental performance limitation for RF applications operating above 1GHz. The substitution is valid only for applications where the lower frequency specification is acceptable.

Packaging Transition: Migration from surface mount SOT-343 to through-hole TO-92-3 requires circuit board redesign and assembly process modification. This is not a pin-compatible substitution.

Frequently Asked Questions (FAQ)

Q: Can the KSP10BU directly replace the BF776E6327FTSA1 in existing circuit boards?

A: No. The KSP10BU uses through-hole TO-92-3 packaging while the BF776E6327FTSA1 uses surface mount SOT-343 packaging. Direct board-level substitution is not possible without circuit board redesign.

Q: Is the KSP10BU suitable for 46GHz RF applications?

A: No. The KSP10BU is specified for 650MHz transition frequency, which is approximately 70 times lower than the BF776E6327FTSA1. Applications requiring 46GHz performance cannot use the KSP10BU.

Q: What is the primary reason for seeking a substitute for the BF776E6327FTSA1?

A: The BF776E6327FTSA1 is classified as obsolete. The KSP10BU is an active product, providing supply chain continuity for applications where the lower frequency specification is acceptable.

Q: Are there electrical compatibility concerns between these parts?

A: Yes. The voltage ratings differ (4.7V versus 25V), and the DC current gain specifications are measured at different operating points. Application-specific circuit analysis is required to determine electrical compatibility.

Q: What compliance certifications apply to both parts?

A: Both parts carry ECCN classification EAR99. The BF776E6327FTSA1 is REACH Unaffected. Complete REACH compliance information for the KSP10BU is not provided in the available technical data.

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