BF723,115 Equivalent & Substitute Parts

Part Overview

The BF723,115 is an active PNP bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the SOT-223 package. This component operates at a maximum collector-emitter breakdown voltage of 250 V with a collector current rating of 100 mA and maximum power dissipation of 1.2 W. The device is qualified to AEC-Q101 automotive standards and maintains ROHS3 compliance. Substitute parts are identified to provide design flexibility when the primary part becomes unavailable or when application requirements necessitate alternative electrical characteristics within compatible parameter ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	250	V
Power - Max	1.2	W
Frequency - Transition	60	MHz
Mounting Type	Surface Mount	—
Package / Case	SOT-223 (TO-261-4, TO-261AA)	—
Operating Temperature (Max)	150	°C
RoHS Status	ROHS3 Compliant	—
Grade	Automotive	—

Substitute Part Grouping Explanation

Substitution of the BF723,115 is determined by strict compatibility across the following electrical and mechanical parameters:

Mandatory Compatibility Criteria:

Transistor type must be PNP
Collector current rating must equal or exceed 100 mA
Collector-emitter breakdown voltage must equal or exceed 250 V
Package type must be SOT-223 (TO-261-4 or TO-261AA)
Mounting type must be Surface Mount
Maximum operating temperature must support 150°C or higher

Secondary Compatibility Parameters:

Power dissipation rating of 1.2 W or greater
RoHS3 compliance status
Automotive qualification or equivalent industrial grade

The BSP16T1G from onsemi satisfies all mandatory criteria with enhanced voltage rating (300 V) and power capability (1.5 W), making it a direct substitute for the BF723,115 in applications where these parameters are not limiting factors.

Parameter Comparison

Parameter	BF723,115 (Nexperia)	BSP16T1G (onsemi)	Unit
Transistor Type	PNP	PNP	—
Current - Collector (Ic) Max	100	100	mA
Voltage - Collector Emitter Breakdown (Max)	250	300	V
Vce Saturation (Max)	600 mV @ 5mA, 30mA	2 V @ 5mA, 50mA	—
Current - Collector Cutoff (Max)	10 nA	50 µA	—
DC Current Gain (hFE) Min	50 @ 25mA, 20V	30 @ 50mA, 10V	—
Power - Max	1.2	1.5	W
Frequency - Transition	60	15	MHz
Operating Temperature Range	Up to 150	−65 to 150	°C
Package / Case	SOT-223 (TO-261-4, TO-261AA)	SOT-223 (TO-261-4, TO-261AA)	—
Mounting Type	Surface Mount	Surface Mount	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

The BSP16T1G is a qualified substitute for the BF723,115 based on the following engineering criteria:

Electrical Compatibility: Both devices share identical collector current ratings (100 mA maximum) and identical SOT-223 package specifications. The BSP16T1G provides a higher collector-emitter breakdown voltage (300 V versus 250 V), which ensures compatibility in applications designed for the BF723,115 without risk of voltage overstress. The BSP16T1G also provides increased power dissipation capability (1.5 W versus 1.2 W).

Compliance and Certification: Both parts maintain ROHS3 compliance and REACH unaffected status. The BF723,115 carries AEC-Q101 automotive qualification. The BSP16T1G is rated for industrial applications with an extended operating temperature range (−65°C to 150°C versus 150°C maximum for the BF723,115).

Performance Trade-offs: The BF723,115 exhibits higher transition frequency (60 MHz versus 15 MHz) and lower saturation voltage (600 mV versus 2 V at specified test conditions). Applications requiring high-frequency switching or minimal saturation voltage should retain the BF723,115. Applications prioritizing voltage margin and thermal headroom may benefit from the BSP16T1G.

Frequently Asked Questions (FAQ)

Q: Can the BSP16T1G replace the BF723,115 in all applications?

A: The BSP16T1G is electrically compatible as a substitute where the application does not depend on the BF723,115's higher transition frequency (60 MHz) or lower saturation voltage characteristics. Both devices share the same collector current rating, package type, and mounting configuration. Verify that the application's switching frequency requirements do not exceed the BSP16T1G's 15 MHz transition frequency specification.

Q: What are the key differences between these two PNP transistors?

A: The primary differences are transition frequency (BF723,115: 60 MHz; BSP16T1G: 15 MHz), saturation voltage (BF723,115: 600 mV; BSP16T1G: 2 V), and collector-emitter breakdown voltage (BF723,115: 250 V; BSP16T1G: 300 V). The BSP16T1G provides higher voltage and power ratings, while the BF723,115 offers superior high-frequency performance.

Q: Are both parts available in the same package?

A: Yes. Both the BF723,115 and BSP16T1G are supplied in the SOT-223 package (TO-261-4 and TO-261AA variants), ensuring identical PCB footprint and mounting compatibility.

Q: What compliance certifications apply to these parts?

A: Both devices are ROHS3 compliant and REACH unaffected. The BF723,115 additionally carries AEC-Q101 automotive qualification. The BSP16T1G is rated for industrial applications with extended temperature range capability.

Q: Can I use the BF723,115 as a substitute for the BSP16T1G?

A: The BF723,115 is not a direct substitute for the BSP16T1G in applications requiring the BSP16T1G's 300 V breakdown voltage rating or extended temperature range (−65°C to 150°C). The BF723,115 is limited to 250 V maximum collector-emitter breakdown voltage and 150°C maximum operating temperature.

Q: How do saturation voltage differences affect circuit design?

A: The BF723,115's lower saturation voltage (600 mV) results in reduced power dissipation during saturation compared to the BSP16T1G (2 V). Applications with tight power budgets or high switching frequencies should account for this difference in thermal calculations and circuit performance modeling.

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