BF199 Equivalent & Substitute Parts

Part Overview

The BF199 is an RF transistor NPN manufactured by onsemi, designed for radio frequency applications requiring operation at 1.1GHz with a maximum collector-emitter breakdown voltage of 25V and power dissipation of 350mW. The device is packaged in a through-hole TO-92-3 configuration and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for new designs, production continuity, and system upgrades where the BF199 is no longer available from primary sources.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	25	V
Frequency - Transition	1.1	GHz
Power - Max	350	mW
Current - Collector (Ic) (Max)	50	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	38 @ 7mA, 10V	—
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—

Substitute Part Grouping Explanation

Substitution of the BF199 is determined by alignment of the following critical parameters: transistor type (NPN), voltage rating, frequency capability, power dissipation, collector current rating, and DC current gain. The substitute parts listed below are grouped based on their ability to meet or exceed the electrical specifications of the BF199 within acceptable operational boundaries.

Critical Substitution Parameters:

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): ≥ 25V
Frequency - Transition: ≥ 1.1GHz
Power - Max: ≥ 350mW
Current - Collector (Ic) (Max): ≥ 50mA
DC Current Gain (hFE): ≥ 38

The following substitute parts meet these criteria with variations in mounting technology and package form factor:

2SC2714-O(TE85L,F) – Toshiba Semiconductor and Storage: Active status RF transistor with 30V breakdown voltage, 550MHz transition frequency, 100mW power rating, and 20mA collector current. Surface mount S-Mini package. Voltage and power ratings are lower than the BF199; frequency capability is reduced.

2SC4726TLP – Rohm Semiconductor: Active status RF transistor with 11V breakdown voltage, 3.2GHz transition frequency, 150mW power rating, and 50mA collector current. Surface mount EMT3 package. Voltage rating is significantly lower; frequency capability exceeds BF199 requirements.

MAPR-000912-500S00 – MACOM Technology Solutions: Active status RF transistor with 80V breakdown voltage, 500W power rating, and 52.5A collector current. Chassis mount configuration. This part operates in a different power class and is intended for high-power applications.

Parameter Comparison

Parameter	BF199 (Main)	2SC2714-O(TE85L,F)	2SC4726TLP	MAPR-000912-500S00
Manufacturer	onsemi	Toshiba Semiconductor and Storage	Rohm Semiconductor	MACOM Technology Solutions
Product Status	Obsolete	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	25V	30V	11V	80V
Frequency - Transition	1.1GHz	550MHz	3.2GHz	—
Power - Max	350mW	100mW	150mW	500W
Current - Collector (Ic) (Max)	50mA	20mA	50mA	52.5A
DC Current Gain (hFE) (Min)	38 @ 7mA, 10V	70 @ 1mA, 6V	56 @ 5mA, 10V	—
Operating Temperature (Max)	150°C	125°C	150°C	200°C
Mounting Type	Through Hole	Surface Mount	Surface Mount	Chassis Mount
Package / Case	TO-92-3	SC-59, SOT-23-3	SC-75, SOT-416	—
RoHS Status	—	RoHS Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

For Direct Electrical Substitution:

The 2SC4726TLP from Rohm Semiconductor is the most suitable substitute when electrical performance and active product status are prioritized. This device maintains NPN transistor type, supports the required 50mA collector current, and exceeds the 1.1GHz frequency requirement with 3.2GHz capability. However, the 11V breakdown voltage is significantly lower than the BF199's 25V rating and must be evaluated against circuit voltage requirements. The device is RoHS3 compliant and actively manufactured.

For Voltage-Rated Substitution:

The 2SC2714-O(TE85L,F) from Toshiba provides a 30V breakdown voltage that exceeds the BF199's 25V specification. However, this device operates at 550MHz, which is below the BF199's 1.1GHz requirement, and the 20mA collector current rating is insufficient for the 50mA specification. This part is suitable only for applications where frequency requirements can be relaxed. The device is RoHS compliant and actively manufactured.

For High-Power Applications:

The MAPR-000912-500S00 from MACOM is intended for high-power RF applications with 500W dissipation and 52.5A collector current. This part operates in a fundamentally different application class and is not suitable as a direct substitute for the BF199 in low-power RF circuits.

Compliance Considerations:

All active substitute parts carry RoHS compliance certifications (RoHS Compliant or ROHS3 Compliant), whereas the BF199 does not specify RoHS status. All parts maintain MSL Level 1 (Unlimited) moisture sensitivity rating. The 2SC4726TLP and MAPR-000912-500S00 are REACH Unaffected.

Frequently Asked Questions (FAQ)

Q: Can the 2SC2714-O(TE85L,F) directly replace the BF199 in all applications?

A: No. While the 2SC2714-O(TE85L,F) provides adequate voltage rating (30V vs. 25V), its 550MHz transition frequency is insufficient for applications requiring 1.1GHz operation. Additionally, the 20mA collector current maximum is below the BF199's 50mA specification. This part is suitable only for lower-frequency RF applications.

Q: What are the package compatibility considerations when substituting the BF199?

A: The BF199 uses a through-hole TO-92-3 package. The 2SC2714-O(TE85L,F) and 2SC4726TLP are surface-mount devices (SOT-23-3 and SOT-416 respectively), requiring PCB redesign and different assembly processes. The MAPR-000912-500S00 is a chassis-mount component. Package changes necessitate circuit board layout modifications and assembly procedure updates.

Q: Is the 2SC4726TLP suitable for circuits designed for 25V operation?

A: No. The 2SC4726TLP has an 11V maximum collector-emitter breakdown voltage, which is significantly lower than the BF199's 25V rating. Using this device in a 25V circuit will result in device failure. This part is suitable only for circuits operating at 11V or lower.

Q: What is the frequency performance difference between the BF199 and its substitutes?

A: The BF199 operates at 1.1GHz transition frequency. The 2SC2714-O(TE85L,F) operates at 550MHz (50% of BF199 capability). The 2SC4726TLP operates at 3.2GHz (approximately 3 times the BF199 capability). The MAPR-000912-500S00 does not specify transition frequency and is not suitable for frequency-dependent applications.

Q: Are all substitute parts actively manufactured?

A: Yes. The 2SC2714-O(TE85L,F), 2SC4726TLP, and MAPR-000912-500S00 are all classified as Active products. The BF199 is classified as Obsolete, making active substitutes necessary for new production and long-term supply assurance.

Q: What compliance certifications should be considered when selecting a substitute?

A: All substitute parts carry RoHS compliance certifications. The 2SC4726TLP and MAPR-000912-500S00 are ROHS3 Compliant. The 2SC2714-O(TE85L,F) is RoHS Compliant. All parts maintain MSL Level 1 (Unlimited) moisture sensitivity. If RoHS compliance is a requirement, all listed substitutes meet this criterion.

Q: Can the MAPR-000912-500S00 be used as a substitute in low-power RF circuits?

A: No. The MAPR-000912-500S00 is designed for high-power applications with 500W dissipation and 52.5A collector current. This device is not suitable for the BF199's 350mW, 50mA application class. Using this part would result in unnecessary cost and complexity.

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