BF1101WR,135 RF MOSFET Equivalent & Substitute Parts

Part Overview

The BF1101WR,135 is an RF MOSFET manufactured by NXP USA Inc., designed for RF applications operating at 800MHz with a 5V test voltage rating. This component is classified as an N-Channel Dual Gate MOSFET in a surface mount SC-82A/SOT-343 package (CMPAK-4 supplier designation).

The BF1101WR,135 has reached obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance requirements for systems utilizing this RF transistor.

Substiute Parts

BF1101WR,135

NXP USA Inc.In Stock: 1011BF1101WR,135 Datasheet

Current PartRFQ

3SK293(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 421223SK293(TE85L,F) Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the BF1101WR,135 is determined by the following critical parameters:

Technology & Configuration: Both the main part and substitute must be N-Channel Dual Gate MOSFETs to maintain functional equivalence in RF circuit applications.

Frequency Performance: The 800MHz operating frequency is a core requirement. Substitute parts must support this frequency band without degradation of RF performance.

Voltage Ratings: The test voltage (5V for main part) and rated voltage (7V for main part) establish the operating envelope. Substitute parts must accommodate these voltage levels or higher ratings to ensure safe operation.

Current Specifications: Current rating (30mA) and test current (12mA) define the device's current handling capability. Substitutes must meet or exceed these specifications.

Package Compatibility: The SC-82A/SOT-343 surface mount package is mandatory for PCB layout compatibility. Substitutes must use identical or mechanically equivalent packages.

Compliance & Environmental: RoHS3 compliance and MSL Level 1 rating ensure regulatory and manufacturing process compatibility.

The 3SK293(TE85L,F) manufactured by Toshiba Semiconductor and Storage qualifies as a substitute based on matching all critical parameters within acceptable engineering tolerances.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: 3SK293(TE85L,F)

The 3SK293(TE85L,F) from Toshiba Semiconductor and Storage is the qualified substitute for the obsolete BF1101WR,135. This recommendation is based on the following engineering factors:

Functional Equivalence: Both devices are N-Channel Dual Gate MOSFETs operating at 800MHz with identical current ratings (30mA) and package form factors (SC-82A/SOT-343).

Voltage Compatibility: The 3SK293(TE85L,F) features a higher rated voltage (12.5V versus 7V), providing enhanced voltage margin and improved reliability in the 5V test voltage operating range of the original design.

Active Product Status: The 3SK293(TE85L,F) maintains active product status with substantial inventory availability (42,100 pieces), ensuring long-term supply chain continuity compared to the obsolete BF1101WR,135.

Regulatory Compliance: Both parts maintain ROHS3 compliance and MSL Level 1 rating, ensuring compatibility with current manufacturing and environmental standards.

Performance Considerations: The 3SK293(TE85L,F) exhibits a slightly higher noise figure (2.5dB versus 1.7dB) and includes specified gain (22dB). These parameters remain within acceptable RF performance ranges for typical 800MHz applications.

Frequently Asked Questions (FAQ)

Q: Can the 3SK293(TE85L,F) be used as a direct replacement for the BF1101WR,135 without circuit modifications?

A: Yes. Both devices share identical package geometry (SC-82A/SOT-343), pin configuration (N-Channel Dual Gate MOSFET), and frequency rating (800MHz). The higher voltage rating of the 3SK293(TE85L,F) provides additional design margin without requiring circuit changes.

Q: What is the significance of the voltage rating difference (7V versus 12.5V)?

A: The BF1101WR,135 has a 7V rated voltage with 5V test voltage. The 3SK293(TE85L,F) has a 12.5V rated voltage with 6V test voltage. The substitute's higher voltage rating indicates greater absolute maximum ratings and improved reliability margin when operating in the 5V test voltage range.

Q: How does the noise figure difference (1.7dB versus 2.5dB) affect circuit performance?

A: The 3SK293(TE85L,F) exhibits 0.8dB higher noise figure. For low-noise RF applications, this difference may be measurable. Circuit-level evaluation is necessary to determine if this noise figure increase is acceptable for the specific application.

Q: Are the packages truly identical?

A: Both parts use the SC-82A/SOT-343 surface mount package. The BF1101WR,135 uses CMPAK-4 supplier designation, while the 3SK293(TE85L,F) uses USQ supplier designation. These are equivalent package designations for the same physical form factor, ensuring PCB footprint compatibility.

Q: What is the inventory status difference between these parts?

A: The BF1101WR,135 has 961 pieces available as new original stock but is obsolete. The 3SK293(TE85L,F) has 42,100 pieces available and maintains active product status, providing superior long-term supply security.

Q: Are both parts RoHS compliant?

A: Yes. Both the BF1101WR,135 and 3SK293(TE85L,F) are ROHS3 compliant with MSL Level 1 rating, meeting current environmental and manufacturing standards.