BDX53C-S Equivalent & Substitute Parts Reference

Part Overview

The BDX53C-S, manufactured by Bourns Inc., is an NPN Darlington Bipolar (BJT) transistor with a maximum collector-emitter breakdown voltage of 100 V and a maximum collector current of 8 A. It is housed in a TO-220-3 through hole package. This component is designated obsolete, making it necessary to identify alternative models with equivalent electrical and mechanical characteristics to ensure continued production and service support.

Substiute Parts

BDX53C-S
Bourns Inc.In Stock: 866BDX53C-S Datasheet
BDX53C-S
Current Part
BDX53C
onsemiIn Stock: 21480BDX53C Datasheet
BDX53C
Direct
BDX53CG
onsemiIn Stock: 1788BDX53CG Datasheet
BDX53CG
Direct
TIP132
STMicroelectronicsIn Stock: 15400TIP132 Datasheet
TIP132
Direct
2N6045G
onsemiIn Stock: 11812N6045G Datasheet
2N6045G
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BDX33C
Fairchild SemiconductorIn Stock: 21693BDX33C Datasheet
BDX33C
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BDX33CG
onsemiIn Stock: 2052BDX33CG Datasheet
BDX33CG
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BDX53B
STMicroelectronicsIn Stock: 7404BDX53B Datasheet
BDX53B
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BDX53BG
onsemiIn Stock: 1690BDX53BG Datasheet
BDX53BG
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TIP102
STMicroelectronicsIn Stock: 23155TIP102 Datasheet
TIP102
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TIP102G
onsemiIn Stock: 1412TIP102G Datasheet
TIP102G
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TIP122G
onsemiIn Stock: 35189TIP122G Datasheet
TIP122G
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Key Parameters

Parameter Value
Transistor Type NPN - Darlington
Collector-Emitter Breakdown Voltage (Max) 100 V
Collector Current (Ic) Max 8 A
Vce Saturation (Max) @ Ib, Ic 2.5V @ 12mA, 3A
Collector Cutoff Current (Max) 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
Power (Max) 2 W
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature -65°C ~ 150°C (TJ)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute transistors for the BDX53C-S are selected strictly according to key parameters: transistor type (NPN Darlington), maximum collector-emitter breakdown voltage (≥100 V), collector current rating (≥8 A), similar saturation voltage, similar DC current gain, package type (TO-220-3), mounting type (through hole), and compliance status. Only parts whose parameters match or exceed those of the BDX53C-S are included as substitutes or equivalents.

Parameter Comparison

Part Number Transistor Type Vce Breakdown (Max) Ic Max Vce Sat (Max) IC Cutoff (Max) hFE (Min) Power (Max) Package / Case Mounting Type Operating Temp RoHS Status Product Status
BDX53C-S (Bourns Inc.) NPN - Darlington 100 V 8 A 2.5V @ 12mA, 3A 500µA 750 @ 3A, 3V 2 W TO-220-3 Through Hole -65°C ~ 150°C ROHS3 Obsolete
BDX53C (onsemi) NPN - Darlington 100 V 8 A 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 60 W TO-220-3 Through Hole 150°C REACH Unaffected Obsolete
BDX53CG (onsemi) NPN - Darlington 100 V 8 A 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 65 W TO-220-3 Through Hole -65°C ~ 150°C ROHS3 Active
TIP132 (STMicroelectronics) NPN - Darlington 100 V 8 A 4V @ 30mA, 6A 500µA 1000 @ 4A, 4V 2 W TO-220-3 Through Hole 150°C ROHS3 Active
2N6045G (onsemi) NPN - Darlington 100 V 8 A 2V @ 12mA, 3A 20µA 1000 @ 3A, 4V 75 W TO-220-3 Through Hole -65°C ~ 150°C ROHS3 Active
BDX33C (Fairchild Semiconductor) NPN - Darlington 100 V 10 A 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 W TO-220-3 Through Hole 150°C ROHS3 Active
BDX33CG (onsemi) NPN - Darlington 100 V 10 A 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 W TO-220-3 Through Hole -65°C ~ 150°C ROHS3 Active
BDX53B (STMicroelectronics) NPN - Darlington 80 V 8 A 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 60 W TO-220-3 Through Hole 150°C ROHS3 Active
BDX53BG (onsemi) NPN - Darlington 80 V 8 A 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 65 W TO-220-3 Through Hole -65°C ~ 150°C ROHS3 Active
TIP102 (STMicroelectronics) NPN - Darlington 100 V 8 A 2.5V @ 80mA, 8A 50µA 1000 @ 3A, 4V 2 W TO-220-3 Through Hole 150°C ROHS3 Active
TIP102G (onsemi) NPN - Darlington 100 V 8 A 2.5V @ 80mA, 8A 50µA 1000 @ 3A, 4V 2 W TO-220-3 Through Hole -65°C ~ 150°C ROHS3 Active
TIP122G (onsemi) NPN - Darlington 100 V 5 A 4V @ 20mA, 5A 500µA 1000 @ 3A, 3V 2 W TO-220-3 Through Hole -65°C ~ 150°C ROHS3 Active

Engineering Selection Recommendations

For obsolete products such as the BDX53C-S, select active substitute parts that match key parameters. Confirm RoHS compliance and operating temperature specifications as provided. Only use alternatives with through hole mounting and TO-220-3 package to maintain mechanical compatibility. Verify that substitute parts hold active or available product status and appropriate compliance documentation according to the specified technical data.

Frequently Asked Questions (FAQ)

Q1: Which parameters are most critical for substitution of NPN Darlington power BJTs in TO-220-3 packages?
A1: Transistor type, collector-emitter breakdown voltage, maximum collector current, DC gain, collector cutoff current, saturation voltage, mounting type, and package compatibility are essential.

Q2: Why can TO-220-3 parts substitute for BDX53C-S?
A2: Substitute parts in the TO-220-3 package maintain identical mechanical and electrical interface definitions required for form, fit, and function.

Q3: Does compliance (RoHS3, REACH) affect direct substitution?
A3: Only substitute parts listed as compliant per provided data should be selected to comply with current regulatory requirements.

Q4: Is a part with higher collector current or breakdown voltage suitable?
A4: Higher collector current or breakdown voltage is accepted, provided all other key parameters meet or exceed BDX53C-S requirements.

Q5: Should power rating and gain be exactly matched?
A5: Substitute selection allows for equal or higher power rating and DC gain, as per strictly defined tabled parameters.

Q6: Are parts with lower maximum collector current (e.g., TIP122G, 5A) valid substitutes?
A6: Only if the application current does not exceed the substitute’s maximum rating. Refer strictly to indicated ratings.

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