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BDX53C-S Equivalent & Substitute Parts Reference
Part Overview
The BDX53C-S, manufactured by Bourns Inc., is an NPN Darlington Bipolar (BJT) transistor with a maximum collector-emitter breakdown voltage of 100 V and a maximum collector current of 8 A. It is housed in a TO-220-3 through hole package. This component is designated obsolete, making it necessary to identify alternative models with equivalent electrical and mechanical characteristics to ensure continued production and service support.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | NPN - Darlington |
| Collector-Emitter Breakdown Voltage (Max) | 100 V |
| Collector Current (Ic) Max | 8 A |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 12mA, 3A |
| Collector Cutoff Current (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 3A, 3V |
| Power (Max) | 2 W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute transistors for the BDX53C-S are selected strictly according to key parameters: transistor type (NPN Darlington), maximum collector-emitter breakdown voltage (≥100 V), collector current rating (≥8 A), similar saturation voltage, similar DC current gain, package type (TO-220-3), mounting type (through hole), and compliance status. Only parts whose parameters match or exceed those of the BDX53C-S are included as substitutes or equivalents.
Parameter Comparison
| Part Number | Transistor Type | Vce Breakdown (Max) | Ic Max | Vce Sat (Max) | IC Cutoff (Max) | hFE (Min) | Power (Max) | Package / Case | Mounting Type | Operating Temp | RoHS Status | Product Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BDX53C-S (Bourns Inc.) | NPN - Darlington | 100 V | 8 A | 2.5V @ 12mA, 3A | 500µA | 750 @ 3A, 3V | 2 W | TO-220-3 | Through Hole | -65°C ~ 150°C | ROHS3 | Obsolete |
| BDX53C (onsemi) | NPN - Darlington | 100 V | 8 A | 2V @ 12mA, 3A | 500µA | 750 @ 3A, 3V | 60 W | TO-220-3 | Through Hole | 150°C | REACH Unaffected | Obsolete |
| BDX53CG (onsemi) | NPN - Darlington | 100 V | 8 A | 2V @ 12mA, 3A | 500µA | 750 @ 3A, 3V | 65 W | TO-220-3 | Through Hole | -65°C ~ 150°C | ROHS3 | Active |
| TIP132 (STMicroelectronics) | NPN - Darlington | 100 V | 8 A | 4V @ 30mA, 6A | 500µA | 1000 @ 4A, 4V | 2 W | TO-220-3 | Through Hole | 150°C | ROHS3 | Active |
| 2N6045G (onsemi) | NPN - Darlington | 100 V | 8 A | 2V @ 12mA, 3A | 20µA | 1000 @ 3A, 4V | 75 W | TO-220-3 | Through Hole | -65°C ~ 150°C | ROHS3 | Active |
| BDX33C (Fairchild Semiconductor) | NPN - Darlington | 100 V | 10 A | 2.5V @ 6mA, 3A | 500µA | 750 @ 3A, 3V | 70 W | TO-220-3 | Through Hole | 150°C | ROHS3 | Active |
| BDX33CG (onsemi) | NPN - Darlington | 100 V | 10 A | 2.5V @ 6mA, 3A | 500µA | 750 @ 3A, 3V | 70 W | TO-220-3 | Through Hole | -65°C ~ 150°C | ROHS3 | Active |
| BDX53B (STMicroelectronics) | NPN - Darlington | 80 V | 8 A | 2V @ 12mA, 3A | 500µA | 750 @ 3A, 3V | 60 W | TO-220-3 | Through Hole | 150°C | ROHS3 | Active |
| BDX53BG (onsemi) | NPN - Darlington | 80 V | 8 A | 2V @ 12mA, 3A | 500µA | 750 @ 3A, 3V | 65 W | TO-220-3 | Through Hole | -65°C ~ 150°C | ROHS3 | Active |
| TIP102 (STMicroelectronics) | NPN - Darlington | 100 V | 8 A | 2.5V @ 80mA, 8A | 50µA | 1000 @ 3A, 4V | 2 W | TO-220-3 | Through Hole | 150°C | ROHS3 | Active |
| TIP102G (onsemi) | NPN - Darlington | 100 V | 8 A | 2.5V @ 80mA, 8A | 50µA | 1000 @ 3A, 4V | 2 W | TO-220-3 | Through Hole | -65°C ~ 150°C | ROHS3 | Active |
| TIP122G (onsemi) | NPN - Darlington | 100 V | 5 A | 4V @ 20mA, 5A | 500µA | 1000 @ 3A, 3V | 2 W | TO-220-3 | Through Hole | -65°C ~ 150°C | ROHS3 | Active |
Engineering Selection Recommendations
For obsolete products such as the BDX53C-S, select active substitute parts that match key parameters. Confirm RoHS compliance and operating temperature specifications as provided. Only use alternatives with through hole mounting and TO-220-3 package to maintain mechanical compatibility. Verify that substitute parts hold active or available product status and appropriate compliance documentation according to the specified technical data.
Frequently Asked Questions (FAQ)
Q1: Which parameters are most critical for substitution of NPN Darlington power BJTs in TO-220-3 packages?
A1: Transistor type, collector-emitter breakdown voltage, maximum collector current, DC gain, collector cutoff current, saturation voltage, mounting type, and package compatibility are essential.
Q2: Why can TO-220-3 parts substitute for BDX53C-S?
A2: Substitute parts in the TO-220-3 package maintain identical mechanical and electrical interface definitions required for form, fit, and function.
Q3: Does compliance (RoHS3, REACH) affect direct substitution?
A3: Only substitute parts listed as compliant per provided data should be selected to comply with current regulatory requirements.
Q4: Is a part with higher collector current or breakdown voltage suitable?
A4: Higher collector current or breakdown voltage is accepted, provided all other key parameters meet or exceed BDX53C-S requirements.
Q5: Should power rating and gain be exactly matched?
A5: Substitute selection allows for equal or higher power rating and DC gain, as per strictly defined tabled parameters.
Q6: Are parts with lower maximum collector current (e.g., TIP122G, 5A) valid substitutes?
A6: Only if the application current does not exceed the substitute’s maximum rating. Refer strictly to indicated ratings.
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