BDX33C-S Equivalent & Substitute Parts Reference

Part Overview

The BDX33C-S from Bourns Inc. is an NPN Darlington Bipolar (BJT) transistor designed for applications requiring a collector-emitter voltage up to 100 V and a collector current of 10 A. It is housed in a TO-220 through-hole package and features a minimum DC current gain (hFE) of 750 at 3A, 3V, and a maximum power dissipation of 2 W. This product is classified as obsolete. Identification of alternative models is necessary for continued production, maintenance, or repair due to end-of-life status and limited inventory.

Substiute Parts

BDX33C-S
Bourns Inc.In Stock: 843BDX33C-S Datasheet
BDX33C-S
Current Part
BDX33C
Fairchild SemiconductorIn Stock: 21693BDX33C Datasheet
BDX33C
Direct
BDX33CG
onsemiIn Stock: 2052BDX33CG Datasheet
BDX33CG
Direct
TIP142T
STMicroelectronicsIn Stock: 21597TIP142T Datasheet
TIP142T
Direct
BDW93C
STMicroelectronicsIn Stock: 21675BDW93C Datasheet
BDW93C
Similar
BDW94CFTU
onsemiIn Stock: 4474BDW94CFTU Datasheet
BDW94CFTU
Similar
BDX53C
onsemiIn Stock: 21480BDX53C Datasheet
BDX53C
Similar
BDX53CG
onsemiIn Stock: 1788BDX53CG Datasheet
BDX53CG
Similar

Key Parameters

Manufacturer Part Number Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Operating Temperature Mounting Type Package / Case RoHS Status
BDX33C-S NPN - Darlington 10 A 100 V 2.5V @ 6mA, 3A 10mA 750 @ 3A, 3V 2 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute and equivalent parts for the BDX33C-S are identified strictly on the basis of the following parameters: transistor type (NPN - Darlington), maximum collector current, collector-emitter voltage rating, Vce(sat) at the specified test current, DC current gain at specified currents and voltages, maximum power dissipation, package type, and compliance (RoHS status). Only parts matching or exceeding these requirements, and within the same mechanical package (TO-220-3 or equivalent), are considered.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Operating Temperature Mounting Type Package / Case RoHS Status Product Status
BDX33C-S Bourns Inc. NPN - Darlington 10 A 100 V 2.5V @ 6mA, 3A 10mA 750 @ 3A, 3V 2 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Obsolete
BDX33C Fairchild Semiconductor NPN - Darlington 10 A 100 V 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 W 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDX33CG onsemi NPN - Darlington 10 A 100 V 2.5V @ 6mA, 3A 500µA 750 @ 3A, 3V 70 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
TIP142T STMicroelectronics NPN - Darlington 10 A 100 V 3V @ 40mA, 10A 2mA 1000 @ 5A, 4V 80 W 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDW93C STMicroelectronics NPN - Darlington 12 A 100 V 3V @ 100mA, 10A 1mA 750 @ 5A, 3V 80 W 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active
BDX53C onsemi NPN - Darlington 8 A 100 V 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 60 W 150°C (TJ) Through Hole TO-220-3 - Obsolete
BDX53CG onsemi NPN - Darlington 8 A 100 V 2V @ 12mA, 3A 500µA 750 @ 3A, 3V 65 W -65°C ~ 150°C (TJ) Through Hole TO-220-3 ROHS3 Compliant Active

Engineering Selection Recommendations

For applications requiring ongoing procurement, select substitute parts with "Active" product status and ROHS3 compliance. Confirm the mechanical package is TO-220-3 and that the key electrical parameters (Ic, Vce, hFE, Vce(sat), and power dissipation) meet or exceed the requirements of the original BDX33C-S. Obsolete alternatives should only be used if no active parts are available.

Frequently Asked Questions (FAQ)

Q1: Which parameters must match for a substitute BDX33C-S transistor?
A1: Substitute devices must match transistor type (NPN - Darlington), maximum collector current, maximum collector-emitter voltage, DC current gain, and saturation voltage at specified test currents. Package compatibility (TO-220-3) is also required.

Q2: Are all listed substitutes pin compatible with BDX33C-S?
A2: All listed NPN Darlington substitutes share the TO-220-3 or comparable package and through-hole mounting, ensuring mechanical and pin compatibility within the stated information.

Q3: Why is RoHS3 compliance important?
A3: RoHS3 compliance is critical for use in regulated applications requiring lead-free and environmentally compliant manufacturing.

Q4: Can PNP Darlington transistors such as BDW94CFTU replace BDX33C-S?
A4: BDW94CFTU is a PNP Darlington transistor and is not an electrical substitute for the BDX33C-S, which is NPN.

Q5: How to distinguish between direct and similar substitutes?
A5: Direct substitutes match all key electrical and package parameters closely; similar substitutes may differ in collector current rating, power handling, or gain but still satisfy minimum requirements.

Q6: Are higher power dissipation ratings acceptable?
A6: Substitute parts with equal or higher power dissipation are acceptable if all other key parameters match.

Q7: Are BDX53C or BDX53CG suitable equivalents?
A7: BDX53C and BDX53CG are NPN Darlington transistors in TO-220-3 packages. They have a lower maximum collector current (8 A vs. 10 A) and may only be used when the application does not require the higher current rating.

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