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BDW94 Equivalent & Substitute Parts
Part Overview
The BDW94 is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 45 V collector-emitter breakdown voltage and 12 A maximum collector current in a TO-220-3 through-hole package. This component is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and procurement continuity. The BDW94 is suitable for applications requiring moderate voltage switching and medium current amplification in power switching circuits.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 5A, 3V |
| Power - Max | 80 W |
| Operating Temperature (TJ) | 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the BDW94 is determined by the following critical electrical and mechanical parameters:
Electrical Compatibility Criteria:
- Transistor type must be PNP - Darlington configuration
- Maximum collector current must be equal to or greater than 12 A
- Collector-emitter breakdown voltage must be equal to or greater than 45 V
- DC current gain (hFE) must meet or exceed 750 @ 5A, 3V
- Vce saturation characteristics must be compatible with 3V @ 100mA, 10A
- Maximum power dissipation must be 80 W or greater
- Operating temperature rating must support 150°C (TJ)
Mechanical Compatibility Criteria:
- Mounting type must be through-hole
- Package must be TO-220-3 or equivalent footprint
- Moisture sensitivity level must be 1 (Unlimited) or better
The BDW94C from STMicroelectronics meets all substitution criteria while offering enhanced voltage rating and active product status.
Parameter Comparison
| Parameter | BDW94 (onsemi) | BDW94C (STMicroelectronics) |
|---|---|---|
| Transistor Type | PNP - Darlington | PNP - Darlington |
| Current - Collector (Ic) (Max) | 12 A | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 5A, 3V | 750 @ 5A, 3V |
| Power - Max | 80 W | 80 W |
| Operating Temperature (TJ) | 150°C | 150°C |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Obsolete | Active |
| RoHS Status | Not specified | ROHS3 Compliant |
Engineering Selection Recommendations
The BDW94C from STMicroelectronics is the direct substitute for the obsolete BDW94 from onsemi. Both components share identical electrical specifications for collector current, saturation voltage, current gain, power rating, and operating temperature. The BDW94C provides a higher collector-emitter breakdown voltage rating of 100 V compared to the BDW94's 45 V, offering enhanced voltage margin in applications operating below 45 V.
The BDW94C is classified as an active product with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Both components utilize the TO-220-3 through-hole package with identical moisture sensitivity levels, enabling direct mechanical and thermal compatibility.
Selection of the BDW94C is appropriate for all applications previously designed with the BDW94, with the additional benefit of higher voltage headroom for circuit protection and design flexibility.
Frequently Asked Questions (FAQ)
Q: Can the BDW94C directly replace the BDW94 in existing designs?
A: Yes. The BDW94C meets or exceeds all electrical parameters of the BDW94, including collector current (12 A), saturation voltage (3V @ 100mA, 10A), and DC current gain (750 @ 5A, 3V). Both components use the TO-220-3 package with identical pin configuration and thermal characteristics. The higher voltage rating of the BDW94C (100 V vs. 45 V) provides additional design margin without affecting performance in circuits operating below 45 V.
Q: What are the key differences between BDW94 and BDW94C?
A: The primary differences are manufacturer (onsemi vs. STMicroelectronics), product status (obsolete vs. active), and collector-emitter breakdown voltage (45 V vs. 100 V). All other electrical specifications are identical. The BDW94C includes ROHS3 compliance certification.
Q: Are there any package or pinout differences?
A: No. Both the BDW94 and BDW94C use the TO-220-3 through-hole package with identical pinout and footprint. No PCB modifications are required for substitution.
Q: What is the significance of the higher voltage rating on the BDW94C?
A: The BDW94C's 100 V collector-emitter breakdown voltage provides greater protection against voltage transients and overstress conditions compared to the BDW94's 45 V rating. This enhanced rating does not affect operation in circuits designed for the BDW94 and may improve circuit reliability.
Q: Are moisture sensitivity levels equivalent?
A: Yes. Both components have MSL 1 (Unlimited) rating, indicating no moisture sensitivity and no special handling or storage requirements during manufacturing and assembly.
Q: Is the BDW94C suitable for new designs?
A: Yes. The BDW94C is an active product with ROHS3 compliance, making it the appropriate choice for new designs requiring a PNP Darlington transistor with 12 A collector current and 80 W power dissipation in a TO-220-3 package.
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