BDW93A-S Equivalent & Substitute Parts Reference

Part Overview

The BDW93A-S is a Bourns Inc. NPN Darlington Bipolar (BJT) Transistor rated for 60 V, 12 A collector current, and packaged in a TO-220-3 case for through-hole mounting. With a maximum DC current gain (hFE) of 750 at 5A/3V and a power dissipation rating of 2 W, the BDW93A-S is suitable for medium-power switching and amplification applications. The device is currently obsolete, making it necessary to identify substitute or equivalent parts for maintenance and new designs requiring direct replacement.

Substiute Parts

BDW93A-S

Bourns Inc.In Stock: 855BDW93A-S Datasheet

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2N6387G

onsemiIn Stock: 19892N6387G Datasheet

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BDW93C

STMicroelectronicsIn Stock: 21675BDW93C Datasheet

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BDW93CTU

onsemiIn Stock: 16313BDW93CTU Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute or equivalent transistors are selected by matching the following critical parameters: transistor type (NPN - Darlington), collector-emitter breakdown voltage (V_CEO), maximum collector current (I_C), minimum DC current gain (hFE), Vce saturation at specified Ib/Ic, cutoff current, package/case, mounting type, RoHS/compliance status, and operating temperature range. Only parts matching or exceeding these specifications are grouped as substitutes.

Key parameters used for substitution:

• NPN Darlington configuration
• Collector-Emitter breakdown voltage
• Collector current rating
• DC current gain (hFE)
• Saturation voltage at standardized Ib/Ic
• Package: TO-220-3 Through Hole
• RoHS compliance

Parameter Comparison

Engineering Selection Recommendations

Parts selected as substitutes must meet RoHS3 compliance for environmental regulations. For ongoing designs or repairs, components with "Active" product status are preferable to avoid supply disruptions. All listed substitutes conform to stated moisture sensitivity levels and certifications.

Frequently Asked Questions (FAQ)

Which parameters determine acceptable substitutes for the BDW93A-S?
Substitute selection is based on transistor type, collector-emitter breakdown voltage, collector current rating, DC current gain, saturation voltage, cutoff current, package type (TO-220-3), mounting method, and RoHS compliance.

Are all substitute transistors in the same package as the BDW93A-S?
Yes, all listed substitutes use the TO-220-3 package and are suitable for through-hole mounting.

Does DC current gain (hFE) need to be identical in all substitute parts?
The DC current gain must meet or exceed the specified minimum (750 @ 5A, 3V). Higher gain values are acceptable as long as other parameters align.

Can substitute parts have a higher voltage or current rating than the BDW93A-S?
Substitutes may have higher ratings; they are acceptable if all lower thresholds (voltage, current) required by the BDW93A-S are met or exceeded.

How is RoHS compliance handled in substitute selection?
Only parts specified as RoHS3 Compliant are considered.

What should be checked on the substitute datasheet?
Only parameters presented in the provided input (transistor type, voltage, current, gain, saturation voltage, cutoff current, package, mounting, compliance, and operating temperature) are required for checking. No additional datasheet review will improve substitution accuracy based on the allowed parameters.